Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.

RF power transistor circuits

Abstract: A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a voltage reference. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the first current electrode of the power transistor and the voltage reference. The decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

Solid state image sensing device with photometry function

Abstract: A solid state image sensing device having an array of pixels each including a static induction transistor and a capacitance connected to a gate thereof, a signal readout line connected to sources of the static induction transistors, a first scanning circuit for reading image signals out of the pixels successively in a destructive manner, a second scanning circuit for reading photometry signals out of preselected pixels in a non-destructive manner, an integrating circuit for integrating the photometry signals, a comparison circuit for comparing an integrated value with a predetermined value to produce a detection signal when the integrated value becomes equal to the predetermined value and a control circuit for controlling the first and second scanning circuits in accordance with the detection signal. When the detection signal is produced, the second scanning circuit is stopped and at the same time the first scanning circuit is initiated to readout all the pixels in a destructive manner.

Active matrix type display and driving method therefor

Abstract: PROBLEM TO BE SOLVED: To solve the problem that the current-driven active matrix type display device has a large time constant determined by a product of resistance of a driving transistor and stray capacitance of a source signal line, therefore, a current value of the source signal line changes slowly. SOLUTION: A current value flowing through the source signal line is increased and a resistance value of the driving transistor is decreased by forming capacitance between a gate electrode (connected with a gate signal line) of a coupling transistor forming a current path between the source signal line and the driving transistor, and the gate electrode of the driving transistor; varying the potential of the gate electrode of the driving transistor using the change in the gate signal line potential; and making the current flowing through the driving transistor larger in the case of being connected with the source line than in the case of being connected with an EL element.

Thermal protection circuit for the die of a transistor

Abstract: A thermal protection circuit for the die of a transistor having a heat sink in which a signal proportional to the dissipative input current and a signal proportional to the dissipative applied voltage of the transistor are multiplied to produce a signal representative of the applied power to the transistor. This representative applied power signal is transformed into a simulated differential in temperature between the die of the transistor and its heat sink. Simultaneously, the temperature of the heat sink is determined and this temperature is added to the simulated differential in temperature between the die of the transistor and the heat sink to determine a sensed die temperature. A control responsive to this sensed die temperature reduces the applied power to the transistor.