Topic
Static induction transistor
About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.
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27 Mar 1990TL;DR: In this article, the hot-carrier degradation of static RAMs is discussed, and it is shown that during the stress, an increase of the access times, the minimum operating voltage, and the write times is observed.
Abstract: The hot-carrier degradation of static RAMs is discussed. During the stress, an increase of the access times, the minimum operating voltage, and the write times is observed. The latter two can be directly related, even quantitatively, to the degradation of the access transistor of the memory cell. Comparison of product and transistor lifetimes show that their voltage dependence is the same, but that the product lifetime is significantly (about a factor 50) larger. The discrepancy is caused by the small sensitivity of the SRAM to transistor degradation, and by duty cycle effects It is concluded that the product lifetime is severely underestimated if it is straightforwardly derived from static transistor lifetime data only. The true product lifetime should be obtained from stressing the product. >
29 citations
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02 Oct 2000
TL;DR: In this article, a sensor for measuring a current passing through a load has been proposed, where the sensor has a power transistor having a first terminal connected to a substantially constant voltage and a second terminal connected with the load.
Abstract: A sensor for measuring a current passing through a load. The sensor has a power transistor having a first terminal connected to substantially constant voltage and a second terminal connected to the load. The sensor can sample a voltage difference with a variable capacitor, and a controller can be configured to cause a variable capacitor in the current sensor to have a capacitance inversely proportional to a resistance of the power transistor, whereby a charge stored on the variable capacitor is proportional to the current passing through the power transistor when the sampling switches are opened. A comparator can compare the current through the power transistor to a known reference current to generate a digital output signal. The sensor can include a power transistor, reference transistor and amplifier connected and configured so as to generate a signal on a reference line having a current of known proportion to the current passing through the load.
29 citations
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29 Oct 1998
TL;DR: In this paper, a bus switch has an n-channel bus-switch transistor that connects an input-bus signal to an output bus, and a gate protection circuit prevents undershoots on the inputs from coupling to the output when the bus switch isolates the buses.
Abstract: A bus switch has an n-channel bus-switch transistor that connects an input-bus signal to an output bus. A gate protection circuit prevents undershoots on the inputs from coupling to the output when the bus switch isolates the buses. The gate of the bus-switch transistor is driven to ground during isolation mode. When a high-to-low transition of the input-bus signal is detected, a pulse generator generates a pulse. The pulse disconnects the gate from ground. A connecting n-channel transistor with its gate connected to ground connects the gate to the input-bus signal when the undershoot pulls the input-bus signal below ground. Internal circuitry is isolated from the below-ground gate by an isolating n-channel transistor that has its gate driven by the input-bus signal during the pulse. A substrate bias generator is used for N-well processes, but P-well processes use a well protection circuit. The P-well under the bus-switch transistor is disconnected from ground during the generated pulse. Another n-channel connecting transistor with its gate grounded connects the P-well to the input-bus signal when the undershoot occurs. The protection circuits are only enabled when the bus switch transistor is in the isolation mode and a low-going transition of the input-bus signal is detected.
29 citations
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25 Jun 1999TL;DR: In this paper, a test transistor structure formed in a semiconductor device has a thick-oxide transistor with an elongated serpentine-shaped metal gate, which is used to measure the threshold voltage of the test structure.
Abstract: A test transistor structure formed in a semiconductor device has a thick-oxide transistor with an elongated serpentine-shaped metal gate. The gate is used to first measure the threshold voltage of the thick-oxide test structure. Then, a current is passed through the elongated metal line which forms the serpentine gate to heat the area of the test structure. While being heated, a stress voltage is applied between the substrate and one end of the gate electrode, this stress voltage being much larger than the logic voltage used in operating thin-oxide transistors on the chip. After a selected time, the current is removed, the stress voltage is removed, and the threshold voltage of the thick-oxide transistor is again measured and compared to the original value. Any reduction in threshold voltage can be attributed to the migration of positive charge to the silicon-to-oxide interface beneath the gate, and is proportional to the area between the source and drain regions of the test transistor.
29 citations
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26 Jun 1990TL;DR: In this paper, a gate electrode structure for a field effect transistor that includes a semiconductor layer photosensitivity is provided. But the gate electrode can be constituted with a kind of metal or a low resistance semiconductor in conjunction with a semiconducted area with photosensitivity adjacent thereto.
Abstract: A photosensor with improved performance is provided with a gate electrode structure for a field effect transistor that includes a semiconductor layer photosensitivity. The gate electrode can be constituted with a kind of metal or a low resistance semiconductor in conjunction with a semiconductor area with photosensitivity adjacent thereto. As a photosensitive semiconductor, amorphous silicon can be used because of its comparatively easy manufacturing method and its high sensitivity. As a field effect transistor, a thin film transistor of amorphous silicon can be used to correspond to the demand for making transistors over a large area. A MOSFET is preferably used as a field effect transistor for the improvement of sensitivity and speed of the sensor.
29 citations