Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.

Computer aided two-dimensional analysis of the junction field-effect transistor

Abstract: A two-dimensional analysis is presented of the mechanisms of operation for a junction field-effect transistor. Particular emphasis is placed upon the process of electric current saturation in both wide gate and narrow gate structures. It is shown that velocity saturated carrier transport in a source-drain channel produces heretofore unreported mechanisms of device operation. Comparisons made between the conclusions derived from this two-dimensional analysis and the conventional one-dimensional theory of JFET operation are presented in graphic form.

Simple and controlled single electron transistor based on doping modulation in silicon nanowires

Abstract: A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic SETs. The period of the Coulomb oscillations is set by the gate capacitance of the transistor and therefore controlled by lithography. The source and drain capacitances have also been characterized. This design could be used to build more complex SET devices.

Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device

Abstract: Provided is a field-effect transistor wherein an oxide film is arranged as a semiconductor layer, the oxide film has a channel portion, a source portion and a drain portion, and compositions of the channel portion, the source portion and the drain portion, excluding oxygen element and an inert gas, are substantially the same.

Full-wave rectifier and method of operation for a recognition system

Abstract: A full-wave rectifier circuit (70) includes a first transistor (N1) and a second transistor (N2) in combination to form a first transistor pair (N1 and N2) for minimizing the voltage drop between ground (88) and the transponder substrates. A third transistor (P1) and a fourth transistor (P2) operate in combination to form a second transistor pair (P1 and P2) for minimizing the voltage drop between the alternating current peak voltage (118 and 120) and the output voltage (VDD) of the full-wave rectifier (70). The first transistor pair (N1 and N2) and second transistor pair (P1 and P2) are controlled by alternating current voltage input signals (118 and 120). A series regulator circuit (70) decouples the first transistor pair (N1 and N2) and the second transistor pair (P1 and P2) from capacitive loads (C1 and C2) of the full-duplex transponder circuitry (14).

Field-effect transistor, circuit configuration and method of fabricating a field-effect transistor

Abstract: The gate region of a field effect transistor comprises at least one through hole wherein a nanoelement is provided which is electrically coupled to the source and the drain. The nanoelement may have the conductance thereof controlled by means of the gate, such that the nanoelement forms a channel region of the field effect transistor.