Topic
Static induction transistor
About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.
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Patent•
24 Feb 2004
TL;DR: In this paper, the P-field blocks form the junction fields in the N-well for equalizing the capacitance of parasitic capacitors between the drain region and the source region and fully deplete the drift region before breakdown.
Abstract: A high voltage LDMOS transistor according to the present invention includes P-field blocks in the extended drain region of a N-well. The P-field blocks form the junction-fields in the N-well for equalizing the capacitance of parasitic capacitors between the drain region and the source region and fully deplete the drift region before breakdown occurs. A higher breakdown voltage is therefore achieved and the N-well having a higher doping density is thus allowed. The higher doping density reduces the on-resistance of the transistor. Furthermore, the portion of the N-well generated beneath the source diffusion region produces a low-impedance path for the source region, which restricts the transistor current flow in between the drain region and the source region.
29 citations
Patent•
06 Nov 1974TL;DR: In this paper, an improved D. C. power source whose output voltage is independent of changes in temperature is disclosed, which is useful for an integrated circuit and can be used for an external stable resistor connected between the emitter and the ground.
Abstract: An improved D. C. power source whose output voltage is independent of changes in temperature is disclosed. Compensation for changes in temperature is established by three features. For a change of the voltage drop in the forward direction between the base and the emitter of a transistor, a plurality of diodes provided in a bias circuit in the transistor are utilizied; for a change of the current amplification factor β of a transistor, an additional transistor is attached to the transistor, and; for a change of the value of an emitter resistor connected between the emitter of the transistor and the ground, an external stable resistor is utilized. The D. C. power source of the present invention is, in particular, useful for an integrated circuit.
29 citations
Patent•
TSMC1
TL;DR: In this paper, a split gate field effect transistor (FET) was fabricated with enhanced areal density and enhanced performance, and a floating gate electrode was formed vertically and horizontally overlapping thereover within the trench, covering an upper sub-portion of the channel.
Abstract: Within both a split gate field effect transistor (FET) device and a method for fabricating the split gate field effect transistor (FET) device there is formed within a semiconductor substrate a trench within whose sidewall is fully contained a channel region within the split gate field effect transistor (FET) device. Similarly, there is also formed within the split gate field effect transistor a floating gate electrode within the trench and covering within the trench a lower sub-portion of the channel region. Finally, the floating gate electrode in turn has formed vertically and horizontally overlapping thereover within the trench a control gate electrode which covers an upper sub-portion of the channel. The split gate field effect transistor (FET) device is fabricated with enhanced areal density and enhanced performance.
29 citations
Patent•
30 Jan 2002
TL;DR: In this paper, a current drive circuit for driving an OLED (organic light- emitting device) is provided for each pixel of a display device, which employs the OLED as a light emitter.
Abstract: PROBLEM TO BE SOLVED: To provide a current drive circuit, which can suppress fluctuation effect of threshold voltage in a drive transistor, and a display device equipped with the current drive circuit. SOLUTION: A current drive circuit for driving an OLED (organic light- emitting device) is provided for each pixel of a display device, which employs the OLED as a light emitter. A display signal Vdsp is inputted to a drive transistor Qd via a pixel switch transistor Qs. The drive transistor Qd is formed by a thin film transistor, and a gate electrode is provided at upper/lower layers of a semiconductor layer, and both of gate electrodes comprises a structure of a shared channel region. Upon driving the OLED, threshold voltage 'Vth' is accumulated and maintained beforehand at a compensation capacitor Cs using switching elements for shorting Q1a and Q1b and a switching element for shutdown Q2, and under this condition the display signal Vdsp is inputted to the drive transistor Qd. COPYRIGHT: (C)2003,JPO
29 citations
Patent•
08 Oct 1991
TL;DR: When a common source line of sense amplifiers in a semiconductor memory device is pulled down via a pulldown transistor, a current level signal indicative of the level of the current which flows through the pull-down transistor is generated as mentioned in this paper.
Abstract: When a common source line of sense amplifiers in a semiconductor memory device is pulled down via a pull-down transistor, a current level signal indicative of the level of the current which flows through the pull-down transistor is generated. The current level signal is compared with a reference level signal indicative of an allowable maximum level of the current which flows through the pull-down transistor. When the current level signal exceeds the allowable maximum level, the pull-down transistor is controlled to reduce the current flowing therethrough.
29 citations