Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.

Current detector circuit

Abstract: In a current detector circuit wherein the sense current (Is) flowing through a sense transistor (2) for sensing part of the main current (Io) flowing through a main element transistor (1) is flowed through the detection resistor (Rs) to cause the bipolar or MOS control transistor (3) to detect the voltage drop (Vs) across the detection resistor (Rs), a compensation diode (12) connected to the base or gate of the control transistor (3) and the emitter of the sense transistor (2) and a forward bias generation resistor element (13) for generating a forward bias applied to the diode (12) for a time interval during which the main current (Io) flows are arranged. When a sense current (Is) flowing through a sense element (2) for sensing part of a main current (Io) flowing through a main element (1) is to be flowed through a detection resistor (Rs) to cause a control transistor (3) to detect a voltage drop (Vs) across through the detection resistor (Rs), the temperature dependence of a threshold voltage between the base and emitter of the control transistor (3) is compensated for, and an output current (Io) is detected with an almost constant current level during an operation.

Novel high speed high density nand-based 2t-nor flash memory design

Abstract: A two transistor NOR flash memory cell has symmetrical source and drain structure manufactured by a NAND-based manufacturing process. The flash cell comprises a storage transistor made of a double-poly NMOS floating gate transistor and an access transistor made of a double-poly NMOS floating gate transistor, a poly1 NMOS transistor with poly1 and poly2 being shorted or a single-poly poly1 or poly2 NMOS transistor. The flash cell is programmed and erased by using a Fowler-Nordheim channel tunneling scheme. A NAND-based flash memory device includes an array of the flash cells arranged with parallel bit lines and source lines that are perpendicular to word lines. Write-row-decoder and read-row-decoder are designed for the flash memory device to provide appropriate voltages for the flash memory array in pre-program with verify, erase with verify, program and read operations in the unit of page, block, sector or chip.

In-rush current control for a low drop-out voltage regulator

Abstract: A method and circuit are shown for controlling an in-rush current to a voltage regulator circuit. A sense transistor is coupled in parallel with a pass transistor of the voltage regulator circuit and used to monitor the current through the pass transistor. A sense current through the sense transistor is converted to a voltage signal and input to an amplifier along with a ramping voltage signal generated in response to a circuit activation signal. An output of the amplifier drives a control gate of a current source that sources current to gate terminals of both the pass transistor and the sense transistor. A limiting circuit also monitors the sense current and sinks current from the control terminal of the current source in order to limit a maximum current through the pass transistor.

Organic electroluminescent display device and method of driving the same

Abstract: An organic electroluminescent display device includes an organic electroluminescent diode receiving a driving voltage and a first ground voltage; first and second driving thin film transistors for providing a driving current to the organic electroluminescent diode, each of the first and second driving thin film transistors receiving one of the driving voltage and the first ground voltage; a first switching thin film transistor receiving a data voltage and switched by an nth scan signal to output the data voltage; a second switching thin film transistor switched by a current providing signal to provide the one of the driving voltage and the first ground voltage to the second driving thin film transistor; a third switching thin film transistor receiving a second ground voltage and switched by a selection signal to output the second ground voltage to an output terminal of the first switching thin film transistor; a fourth switching thin film transistor disposed among an output terminal of the second switching thin film transistor, a gate terminal of the first driving thin film transistor and a gate terminal of the second driving thin film transistor and switched by the selection signal; and a first capacitor disposed among the output terminal of the first switching thin film transistor, the gate terminal of the first driving thin film transistor and the gate terminal of the second driving thin film transistor, wherein “n” is a positive integer.

Microwave nanotube transistor operation at high bias

Abstract: We measure the small signal, 1GHz source-drain dynamical conductance of a back-gated single-walled carbon nanotube field effect transistor at both low and high dc bias voltages. At all bias voltages, the intrinsic device dynamical conductance at 1GHz is identical to the low frequency dynamical conductance, consistent with the prediction of a cutoff frequency much higher than 1GHz. This work represents a significant step towards a full characterization of a nanotube transistor for rf and microwave amplifiers.