Topic
Static induction transistor
About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.
Papers published on a yearly basis
Papers
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07 Jun 1995TL;DR: An isolated pilot transistor for a QVDMOS device 10 has a gate and drain region in symmetry with the sources 20 of device 10 and an additional resistance 116 in the drain 118 to compensate for current spreading between the source 120 and the buried layer resistor 132 as mentioned in this paper.
Abstract: An isolated pilot transistor 100 for a QVDMOS device 10 has a gate and drain region in symmetry with the sources 20 of device 10 and an additional resistance 116 in the drain 118 to compensate for current spreading between the source 120 and the buried layer resistor 132.
26 citations
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08 Jun 2005TL;DR: In this paper, a transistor with a gate and a non-uniform gate oxide under the gate is described. But the transistor has a low leakage currents and methods of fabricating the transistor on a semiconductor substrate are not discussed.
Abstract: The invention provides a transistor having low leakage currents and methods of fabricating the transistor on a semiconductor substrate. The transistor has a gate and a nonuniform gate oxide under the gate.
26 citations
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23 Jun 2005TL;DR: In this paper, a built-in gate driver having improved reliability and a display device having the same are provided, and a transistor controlled by an output signal of a next stage is further provided and thus a node (Q) is rapidly discharged.
Abstract: A built-in gate driver having an improved reliability and a display device having the same are provided. A transistor controlled by an output signal of a next stage is further provided and thus a node (Q) is rapidly discharged. Accordingly, the multi-output signals due to the reduced discharge of the node (Q) caused by the degradation of the transistor controlled by a node QB can be prevented. By including only one transistor for controlling the charge of the start pulse signal on the node (Q), it is possible to prevent a malfunction from occurring when the transistor connected to the clock is degraded by the periodic clock of a high state. Also, an image quality and the reliability of the gate driver can be improved.
26 citations
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26 Jun 1984
TL;DR: In this article, a high-speed circuit with a basic cell consisting of a first transistor and a second transistor is described, where the first transistor is connected in a cascode configuration with the second transistor and the unipolar device is controlled by an input voltage signal applied to its gate.
Abstract: Disclosed is a high-speed circuit in which a basic cell includes a high-speed first transistor (Q1) and a high-speed second transistor (Q2). Both the first and second transistors have high gain-bandwidth products. The second transistor (Q2) is a unipolar (field-effect) device which is connected in a cascode configuration with the first transistor (Q1). The uni polar device functions to control the operating point of the first transistor over a range from "on" to "off" as a function of the unipolar device operating at a point over the range from "on" to "off". The unipolar device is controlled by an input voltage signal applied to its gate.
26 citations
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05 Jun 1998TL;DR: In this paper, a current-measuring circuit is designed to measure the current flowing through an electric load and a switching transistor, and a voltage control circuit is used to match the potential difference across the current measuring transistor and the switching transistor.
Abstract: A current-measuring circuit is provided which is designed to measure the current flowing through an electric load and a switching transistor. The current-measuring circuit includes a current-measuring device. The current-measuring device includes a current-measuring transistor and a voltage control circuit. The current-measuring transistor is disposed in parallel to the switching transistor and allows the current to flow therethrough that is proportional to the current flowing through the electric load and the switching transistor and that is used to measure the current flowing through the switching transistor and the electric load. The voltage control circuit controls a potential difference across the current-measuring transistor so as to match a potential difference across the switching transistor, thereby achieving the proportion of the current flowing through the current-measuring transistor to the current flowing through the switching transistor and the electric load.
26 citations