Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.

Voltage current converter circuit

Abstract: A linear voltage-current converter circuit having a simplified circuit structure and operable over a wide voltage range is disclosed. The circuit comprises a first transistor having a drain connected to a power voltage through a first load element, a second and a third transistor having drains connected to the power voltage through a second load element, means for supplying gates of the first and second transistor with voltage signal, means responsive to a voltage difference at drains of the first and second transistors for controlling a gate voltage of the third transistor so as to reduce the voltage difference to zero, an output transistor, and means for supplying a gate of the output transistor with the same voltage as the gate voltage of the third transistor.

High frequency performance of dual metal gate vertical tunnel field effect transistor based on work function engineering

Abstract: A novel dual metal gate doping-less vertical tunnel field effect transistor (D-VTFET) on silicon body, using work function engineering is proposed. The proposed structure does not required impurity doping for formation of the drain and the source regions. In this concern, source and drain regions are formed by selecting appropriate work-function of metal electrode. The source and drain regions are not formed by conventional ways of ion implantation or diffusion. Hence, proposed structure is immune greatly to the process variation, issues of doping control and random dopant fluctuations which are serious problems in ultrathin silicon devices. For further improvement in ON state current and analogue/RF figures of merit dual work function of single gate material is considered. The electrical characteristics of the proposed device with the D-VTFET are simulated and compared.

Circuit for controlling a power MOS transistor on an inductive load

Abstract: In a circuit comprising a power MOS transistor (MP) connected to an inductive load (L), the gate (GP) of the power MOS transistor is connected, on the one hand, to a voltage booster circuit (3) and, on the other hand, to the drain (DL) of a logic MOS transistor (ML). A control circuit (56) fed by the supply source has an output (63) connected to the gate (GL) of the logic MOS transistor. Means are provided for limiting the source voltage of the logic MOS transistor to a voltage lower than the supply voltage (VCC) minus a predetermined threshold voltage when the power MOS transistor is conductive. The control circuit is then capable of controlling the switching of the logic MOS transistor with the supply voltage available at the supply source.

Non-volatile ternary content-addressable memory 4t2r cell with rc-delay search

Abstract: The 4T2R cell comprises a write transistor, a first variable resistive element, a first transistor, a second variable resistive element, a second transistor, and a charge control transistor. The first transistor is electrically coupled to the first variable resistive element in series, and the second transistor is electrically coupled to the second variable resistive element in series, for providing search paths. For operating in a search phase, a pulse voltage is applied across the gate electrode and the source electrode of the first transistor (or across the gate electrode and the source electrode of the second transistor) for determining whether the gate voltage of the charge control transistor changes larger than a match threshold during the period of the pulse. Different RC-delay of the variable resistive elements controlling the voltage change speed of the gate voltage of the charge control transistor determines the matching result.

Insulated-gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device

Abstract: The invention relates to an insulated-gate bipolar transistor, a semiconductor device using it, and a method of manufacture thereof. It is an object of the invention to eliminate the need of connecting a freewheel diode for bypassing back current. The impurity concentration in an N+ buffer layer (12) cooperating with a P+ collector layer (11) to form a junction is increased to lower the avalanche breakdown voltage of a parasitic diode (D) formed of N-base layers (12, 13) and the P+ collector layer (11). This decreases the reverse breakdown voltage of an IGBT (101) below five times the saturation voltage (V?CE(sat)?) between collector and emitter.