scispace - formally typeset
Search or ask a question
Topic

Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.


Papers
More filters
Patent
16 Dec 2003
TL;DR: An oscillator includes a transistor, a first bias resistor connected between the base of the transistor and a power input terminal, and a second bias resistor connecting between the bottom of the transistors and a control-voltage input terminal.
Abstract: An oscillator includes a transistor, a first bias resistor connected between the base of the transistor and a power input terminal, and a second bias resistor connected between the base of the transistor and a control-voltage input terminal. When the control-voltage input terminal is grounded, the bias voltage at the base of the transistor is below a predetermined threshold, thus causing the oscillator to stop oscillation. When the control-voltage input terminal is open, the bias voltage at the base of the transistor is above the threshold, thus causing the oscillator to start oscillation.

25 citations

Patent
24 Oct 1991
TL;DR: In this article, a temperature compensated control circuit includes a load transistor which passes the load current and has an on-resistance which varies with temperature, and the control circuit controls the load currents to maintain the sensed voltage within the range.
Abstract: A temperature compensated control circuit includes a load transistor which passes the load current and has an on-resistance which varies with temperature. To provide temperature compensation, first and second pilot transistors are integrated with the load transistor such that as the load transistor heats-up due to the load current passing through the on-resistance of the load transistor, the first and second pilot transistors heat-up due to heat conduction from the load transistor. Each of the pilot transistors has an on-resistance which varies proportionally or similarly to the on-resistance of the load transistor. A first current source supplies a first level of current to the on-resistance of the first pilot transistor to develop a first reference voltage, and a second current source supplies a second level of current to the on-resistance of the second pilot transistor to develop a second reference voltage. The range between the first and second reference voltages corresponds to an acceptable range of load current. A voltage corresponding to the load current is sensed across the load transistor, and the control circuit controls the load current to maintain the sensed voltage within the range.

25 citations

Patent
Arthur M. Cappon1
27 Dec 1977
TL;DR: In this paper, a logic gate with a first depletion mode field effect transistor with a gate electrode adapted for coupling to a control signal source, a second depletion mode FEM transistor and an enhancement mode EEM transistor being serially connected to the second FEM is described.
Abstract: A logic gate having a first depletion mode field effect transistor with a gate electrode adapted for coupling to a control signal source, a second depletion mode field effect transistor and an enhancement mode field effect transistor, such enhancement mode field effect transistor being serially connected to the second depletion mode transistor. The second depletion mode transistor and the enhancement field effect transistor are fed by the first depletion mode transistor. One of such serially connected transistors has a Schottky gate contact. With such arrangement the logic gate includes a "complementary" pair of relatively short channel length devices fed by a relatively short channel length device to provide low static power dissipation and large output capacitance drive capability.

25 citations

Patent
13 Jan 2012
TL;DR: In this article, the first load terminal of the load transistor is coupled to the sense transistor, and a measurement circuit comprising a current source configured to provide a calibration current is presented.
Abstract: A circuit arrangement includes a load transistor and a sense transistor. The first load terminal of the load transistor is coupled to the first load terminal of the sense transistor. A measurement circuit comprising a current source configured to provide a calibration current, the measurement circuit configured to measure a first voltage between the first load terminal and the second load terminal of the sense transistor in the on-state of the sense transistor, to determine a resistance of the sense transistor based on the calibration current and the first voltage, to measure a second voltage between the first load terminal and the second load terminal of the load transistor in the on-state of the load transistor, and to determine a load current through the load transistor based on the resistance of the sense transistor and the second voltage.

25 citations

Patent
26 Apr 2004
TL;DR: In this paper, a voltage/current reference circuit includes a first bipolar transistor and a second bipolar transistor that exhibit a first voltage drop VBE1 and second voltage dropVBE2, respectively.
Abstract: A voltage/current reference circuit includes a first bipolar transistor and a second bipolar transistor that exhibit a first voltage drop VBE1 and a second voltage drop VBE2, respectively. A first resistor, having a resistance R1, is configured to draw a first current equal to (VBE1−VBE2)/R1. A second resistor, having a resistance R2, is configured to draw a second current equal to VBE1/R2. A first transistor supplies the first and second currents to the first and second resistors. A second transistor, having a current mirror configuration with respect to the first transistor, directly provides a reference current equal to (VBE1−VBE2)/R1+VBE1/R2. A third transistor, having a current mirror configuration with respect to the first transistor, provides a current equal to the reference current to a third resistor having a resistance R3 and a third bipolar transistor that exhibits a third voltage drop VBE3, thereby generating a reference voltage.

25 citations


Network Information
Related Topics (5)
Transistor
138K papers, 1.4M citations
86% related
Substrate (electronics)
116.1K papers, 1.3M citations
82% related
Capacitor
166.6K papers, 1.4M citations
81% related
Silicon
196K papers, 3M citations
80% related
Voltage
296.3K papers, 1.7M citations
79% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20234
20225
20211
20203
20196
20189