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Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.


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Patent
31 Jan 2005
TL;DR: In this article, a drive circuit including a drive transistor for feeding to a load a drive current corresponding to an input signal is considered, where one terminal of the light-emitting element is connected to a gate of a transistor for correction.
Abstract: A drive circuit including a drive transistor for feeding to a load a drive current corresponding to an input signal. The drive circuit has a correction circuit that supplies a correction signal corresponding to an impedance of the load to a gate of the drive transistor to correct the drive current to be fed to the load by the drive transistor, and in which the load is a light-emitting element. One terminal of the light-emitting element is connected to a gate of a transistor for correction, and when a predetermined potential Ps is set to a value calculated by deducting a threshold voltage Vth of the transistor for correction from a terminal potential Pi of the light-emitting element with respect to a drive current, the drive circuit sets a source potential of the transistor for correction to the predetermined potential Ps to thereby generate a voltage corresponding to an impedance of the light-emitting element as a source-to-drain current of the transistor for correction.

95 citations

Journal ArticleDOI
TL;DR: It is shown that the floating gate transistor can be modeled as a weakly conductive stuck-on transistor or as a stuck-open transistor depending on the values of the parameters characterizing the defect.
Abstract: The behavior of an MOS transistor with an open in the polygate path (floating transistor gate defect) is investigated and its effect on the quiescent power supply current I/sub DDQ/ is studied. The possible detection of this defect by current testing is explored in fully complementary CMOS circuits. The behavior of a transistor with its floating gate is modeled using the coupling capacitances in the floating gate and the charge in the transistor gate. The poly-bulk and metal-poly capacitances are found to be two significant parameters in determining the degree of conduction on the affected transistor. The induced voltage in the floating gate and the quiescent current are estimated by analytical expressions. The model is compared with SPICE 2 simulations. Good agreement is observed between the simple analytical expressions, simulations and experimental measures performed on defective circuits. In addition, it is shown that the floating gate transistor can be modeled as a weakly conductive stuck-on transistor or as a stuck-open transistor depending on the values of the parameters characterizing the defect. >

95 citations

Patent
07 Mar 2008
TL;DR: In this paper, the authors proposed a tunnel field effect transistor (TFET) which consists of a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel.
Abstract: A tunnel field effect transistor (TFET) is disclosed. In one aspect, the transistor comprises a gate that does not align with a drain, and only overlap with the source extending at least up to the interface of the source-channel region and optionally overlaps with part of the channel. Due to the shorter gate, the total gate capacitance is reduced, which is directly reflected in an improved switching speed of the device. In addition to the advantage of an improved switching speed, the transistor also has a processing advantage (no alignment of the gate with the drain is necessary), as well as a performance improvement (the ambipolar behavior of the TFET is reduced).

95 citations

Journal ArticleDOI
TL;DR: In this paper, a dual-gate AlGaN/GaN enhancement-mode (E-mode) transistor based on a dualgate structure is presented, which allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage.
Abstract: In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown voltage. The device utilizes an integrated gate structure with a short gate controlling the threshold voltage and a long gate supporting the high-voltage drop from the drain. Using this new dual-gate technology, AlGaN/GaN E-mode transistors grown on a Si substrate have demonstrated a high threshold voltage of 2.9 V with a maximum drain current of 434 mA/mm and a specific on-resistance of 4.3 m Ω·cm2 at a breakdown voltage of 643 V.

95 citations

Patent
06 Mar 2001
TL;DR: In this article, an active driving circuit for a display panel includes first to fourth transistors, a capacitor, a constant current source, and a capacitor with a ground one side and a gray signal of a data line.
Abstract: An active driving circuit for a display panel includes first to fourth transistors, a capacitor, a constant current source, and a capacitor. The first transistor is connected with a positive power source. The second transistor has a common gate terminal together with the first transistor and a mirror circuit against the first transistor. Also, the second transistor is turned on by a common gate signal applied to the common gate terminal to supply the positive power source to a display device. The third transistor sets a saturated threshold voltage for the common gate terminal by allowing the first transistor and the second transistor to constitute a mirror circuit against each other in accordance with a scan line signal. The constant current source supplies a current with a ground one side and controlled by a gray signal of a data line. The fourth transistor sets the common gate voltage corresponding to the controlled current of the constant current source by the scan line signal. The capacitor accumulates charges corresponding to the difference between the positive power source and the common gate voltage.

95 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20234
20225
20211
20203
20196
20189