Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.

Electronic Circuit, Method of Driving Electronic Circuit, Electro-Optical Device, Method of Driving Electro-Optical Device, and Electronic Apparatus

Abstract: To provide an electronic circuit, a method of driving the electronic circuit, an electro-optical device, a method of driving the electro-optical device and an electronic apparatus, capable of reducing deviations in threshold voltages of transistors. A pixel circuit 20 is constructed with three transistors of a driving transistor Trd, an adjusting transistor Trc and a switching transistor Trs, and two capacitors of a first capacitor C 1 and a second capacitor C 2 . Further, a source of the adjusting transistor Trc is connected to a voltage supply line VL for supplying a driving voltage Vdd through a control transistor Q in common with the sources of the adjusting transistors Trc of other pixel circuits, the voltage supply line VL being provided at the right end side of an active matrix part.

Characterization of subthreshold MOS mismatch in transistors for VLSI systems

Abstract: MOS transistor mismatch is revisited in the context of subthreshold operation and VLSI systems. We report experimental measurements from large transistor arrays with device sizes typical for digital and analog VLSI systems (areas between 9 and 400μm2). These are fabricated at different production qualified facilities in 40-nm gate oxide,n-well andp-well, mask lithography processes. Within the small area of our test-strips (3 mm2), transistor mismatch can be classified into four categories: random variations, “edge,” “striation,” and “gradient” effects. The edge effect manifests itself as a dependence of the transistor current on its position with reference to the surrounding structures. Contrary to what was previously believed, edge effects extend beyond the outer most devices in the array. The striation effect exhibits itself as a position-dependent variation in transistor current following a sinusoidal oscillation in space of slowly varying frequency. The gradient effect is also a position-dependent spatial variation but of much lower frequency. When systematic effects are removed from the data, the random variations follow an inverse linear dependence on the square root of transistor area.

Power supply circuit with a voltage selector

Abstract: A power supply circuit receiving several supply voltages on respective switches, at least one of the switches being a first PMOS transistor connected between one of the supply voltages and a common output terminal, this switch being associated with a second PMOS transistor connected between the gate of the first transistor and a power supply node maintained at the highest of the other supply voltages, with a third NMOS transistor, which is less conductive in the on state than the second transistor, connected between the gate of the first transistor and the ground, and with a fourth PMOS transistor having its source connected to the power supply line of the switch and its drain connected to ground via a current source, and to the gates of the second, third, and fourth transistors.

Split-gate field effect transistor

Abstract: A field effect transistor having a gate voltage swing in the transistor channel varying as a function of position between the drain and the source. The gate voltage swing in the transistor channel may be made to vary as a function of position by making the threshold voltage a function of position. Alternatively, a split-gate device may be used by applying a voltage between the gates. In both cases, the electric field near the source is raised to accelerate the electrons thereby decreasing electron transit time.

A brief analysis of the field effect diode and breakdown transistor

Abstract: The carrier densities of a field effect diode are calculated for the limit of a thin intrinsic silicon layer. The resulting current-voltage relation and the application of this device as a transistor are discussed. In forward bias, carrier densities can be modulated without the complications of the hot-electron effects present in regular field effect transistors. In reverse bias, it can be utilized as a transistor in which the breakdown voltage is modulated by the gate voltages.