Topic
Static induction transistor
About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.
Papers published on a yearly basis
Papers
More filters
Patent•
08 Jul 2010TL;DR: In this paper, an improved pixel circuit including N-type transistors is provided, which includes a light emitting device driven by a driving current according to a gate voltage of a driving transistor.
Abstract: An improved pixel circuit including N-type transistors is provided. The pixel circuit includes a light emitting device driven by a driving current according to a gate voltage of a driving transistor. The pixel circuit also includes a first capacitor, a second transistor for transferring a data signal to a first terminal of the first capacitor in response to a scan control signal, a third transistor for diode-connecting the driving transistor in response to the scan control signal, a fourth transistor for applying a first power voltage to a first electrode of the driving transistor in response to an emission control signal, a fifth transistor for applying a sustain voltage to the first terminal of the first capacitor in response to the emission control signal, and a sixth transistor for applying the first power voltage to a second terminal of the first capacitor in response to an initialization control signal.
65 citations
TL;DR: In this article, the high-frequency thermal noise in the drain and the gate of an enhancement mode MOS field-effect transistor was analyzed by using the transmission line model of the channel.
Abstract: The high-frequency thermal noise in the drain and the gate of an enhancement mode MOS field-effect transistor was analyzed by using the transmission line model of the channel. The analysis gave the mean squared noise current generators of the drain and the gate and their correlation. The correlation coefficient of the drain and the gate noise was zero for zero drain voltage and was 0.395j at saturation. The noise figure of the MOS field-effect transistor was calculated from the result of the analysis. The high-frequency noise characteristics of an MOS field-effect transistor were similar to those of a junction gate field-effect transistor.
65 citations
Patent•
15 Oct 2015
TL;DR: In this article, a pixel circuit, a driving method, a display panel, and a display device are provided by cooperative driving of the respective transistors and the storage capacitor, and the driving current of the driving transistor can be independent of the gate-source voltage and the threshold voltage of a driving transistor.
Abstract: The application provides a pixel circuit, a driving method, a display panel and a display device. The pixel circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a driving transistor, a storage capacitor and a light emitting element, and by cooperative driving of the respective transistors and the storage capacitor, the driving current of the driving transistor can be independent of the gate-source voltage and the threshold voltage of the driving transistor.
65 citations
Patent•
12 Mar 2001
TL;DR: In this paper, the authors proposed a switching transistor with reduced switching losses, where the output capacitance is very high when drain/source voltages are low and falls to such low values that the energy stored in the transistor becomes very low.
Abstract: The invention relates to a switching transistor presenting reduced switching losses. In the switching transistor, output capacitance is very high when drain/source voltages are low. As the drain/source voltage increases, the capacitance falls to such low values that the energy stored in the transistor becomes very low.
65 citations
08 May 1989
TL;DR: In this article, a matched pnp transistor connected as a diode was used to compensate for the V/sub EB/ of the current-source transistor, which was supposed to vary over a number of decades.
Abstract: To create a better voltage-to-current converter, it seemed natural to use another junction, that of a matched pnp transistor connected as a diode, to compensate for the V/sub EB/ of the current-source transistor. However, for this compensation to be effective it was necessary to arrange that the current in the additional pnp transistor track that in the current-source transistor, which was supposed to vary over a number of decades. A five-transistor circuit that provides a nice solution to the problem of creating a precise voltage-to-current converter is proposed. It was incorporated into the circuit for a controlled oscillator with good results. The circuit and its applications are described. >
64 citations