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Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.


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Patent
04 Aug 2003
TL;DR: In this paper, a pixel circuit of an organic EL display device is coupled to a gate of a compensating transistor, which is configured to operate as a diode, and a precharge voltage is applied to the gate of the driving transistor while a selection signal is applied on a previous scan line.
Abstract: In a pixel circuit of an organic EL display device, a gate of a driving transistor is coupled to a gate of a compensating transistor, which is configured to operate as a diode. A precharge voltage is applied to the gate of the driving transistor while a selection signal is applied to a previous scan line, so that the compensating transistor is biased in a forward direction to apply a data voltage on the gate of the drive transistor. The driving transistor may be electrically isolated from the organic EL element (OLED) while precharging, so as to prevent the OLED from emitting a light using the precharge voltage. In addition, the driving transistor may be electrically isolated from the OLED while the data voltage is being charged, so as to prevent the OLED from emitting a light.

58 citations

Patent
Hirotada Kuriyama1
05 Apr 1996
TL;DR: In this article, an access transistor and an MIS switching diode are connected between the storage node and a second power supply potential node, and the switching voltage is smaller than the threshold voltage of the bit line load transistor.
Abstract: A memory cell of an SRAM includes an access transistor, and an MIS switching diode. The access transistor has a drain electrode connected to a bit line of a corresponding column, a source electrode connected to a storage node, and a gate electrode connected to a word line of a corresponding row. The threshold voltage of the access transistor is small than the threshold voltage of a bit line load transistor. The MIS switching diode is connected between the storage node and a second power supply potential node. The switching initiate voltage of the MIS switching diode is greater than the difference between the first potential and the threshold voltage of the bit line load transistor, and smaller than the difference between the first potential and the threshold voltage of the access transistor. Thus, data can be read/written and held accurately.

58 citations

Patent
19 May 2006
TL;DR: In this article, a DC-DC converter prevents through current from flowing in an output transistor by detecting current flowing through a choke coil based on the potential difference between two terminals of the second transistor.
Abstract: A DC-DC converter prevents through current from flowing in an output transistor. A first transistor receives an input voltage. A second transistor is connected to the first transistor. A comparator is connected to the second transistor. The comparator detects current flowing through a choke coil based on the potential difference between two terminals of the second transistor to generate a switching control signal for turning the second transistor on and off. The second transistor and the comparator form an ideal diode. A control circuit of the DC-DC converter generates an activation signal for turning the first transistor on and off based on a pulse signal to keep an output voltage constant. A through current prevention pulse generation circuit generates a pulse signal for turning off the second transistor from before the first transistor is turned on to after the first transistor is turned on.

58 citations

Patent
13 Nov 1998
TL;DR: In this article, a power transistor die has a lower surface and an upper surface, and a control circuit for controlling the power transistor is mounted to the upper surface of the die using an insulating epoxy.
Abstract: An electronic package for an electronic device includes a substrate. A power transistor die has a lower surface and a upper surface, and the lower surface of the power transistor die is mounted on the substrate. A control circuit for controlling the power transistor is mounted to the upper surface of the power transistor die using an insulating epoxy.

58 citations

Patent
Paul Robert Schroeder1
09 Aug 1974
TL;DR: In this article, an improved TTL to MOS voltage level shifter circuit utilizes a totem pole output stage consisting of a pull-up junction transistor and a pulldown saturation junction transistor, an intermediate stage consisting essentially of a saturator and a diode, and current spike inhibit circuitry.
Abstract: An improved TTL to MOS voltage level shifter circuit utilizes a totem pole output stage consisting of a pull-up junction transistor and a pull-down saturation junction transistor, an intermediate stage consisting essentially of a saturation junction transistor, an input stage consisting essentially of a diode and a saturation junction transistor, and current spike inhibit circuitry which consists essentially of a saturation junction transistor connected between the input stage and the base of the pull-down transistor. The current spike inhibit transistor, which turns on with the pull-down transistor, has a greater turnoff time than the pull-down transistor and consequently provides a relativley low impedance discharge path connected to the base of the pull-down transistor which allows the pull-down transistor to turn off before the pull-up transistor turns on. This helps insure against output current spikes that occur if the pull-up and pull-down transistors conduct simultaneously.

58 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20234
20225
20211
20203
20196
20189