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Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.


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Patent
12 May 1999
TL;DR: In this article, a low dropout (LDO) voltage regulator and a system (100) including the same are disclosed, where an error amplifier ( 38) controls the gate voltage of a source follower transistor ( 24 ) in response to the difference between a feedback voltage (V FB ) from the output (V OUT ) and a reference voltage (v this article ).
Abstract: A low drop-out (LDO) voltage regulator ( 10 ) and system ( 100 ) including the same are disclosed. An error amplifier ( 38 ) controls the gate voltage of a source follower transistor ( 24 ) in response to the difference between a feedback voltage (V FB ) from the output (V OUT ) and a reference voltage (V REF ). The source of the source follower transistor ( 24 ) is connected to the gates of an output transistor ( 12 ), which drives the output (V OUT ) from the input voltage (V IN ) in response to the source follower transistor ( 24 ). A current mirror transistor ( 14 ) has its gate also connected to the gate of the output transistor ( 12 ), and mirrors the output current at a much reduced ratio. The mirror current is conducted through network of transistors ( 18, 22 ), and controls the conduction of a first feedback transistor ( 28 ) and a second feedback transistor ( 35 ) which are each connected to the source of the source follower transistor ( 24 ) and in parallel with a weak current source ( 34 ). The response of the first feedback transistor ( 28 ) is slowed by a resistor ( 32 ) and capacitor ( 30 ), while the second feedback transistor ( 35 ) is not delayed. As such, the second feedback transistor ( 35 ) assists transient response, particularly in discharging the gate capacitance of the output transistor ( 12 ), while the first feedback transistor ( 28 ) partially cancels load regulation effects.

210 citations

Patent
05 Feb 2007
TL;DR: In this article, the threshold voltage of the drive transistor is imparted to the holding capacitor in order to cancel an influence of threshold voltage on a pixel circuit, which is a function of compensating for characteristic variation of an electrooptical element and threshold voltage variation of a transistor.
Abstract: A pixel circuit having a function of compensating for characteristic variation of an electro-optical element and threshold voltage variation of a transistor is formed from a reduced number of component elements. An input signal is sampled from a signal line so as to be held in a holding capacitor. The threshold voltage of the drive transistor is imparted to the holding capacitor in order to cancel an influence of the threshold voltage.

209 citations

Patent
30 May 2002
TL;DR: In this article, a high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from field plate members by one or multiple dielectric layers.
Abstract: A high-voltage transistor with a low specific on-state resistance and that supports high voltage in the off-state includes one or more source regions disposed adjacent to a multi-layered extended drain structure which comprises extended drift regions separated from field plate members by one or more dielectric layers. With the field plate members at the lowest circuit potential, the transistor supports high voltages applied to the drain in the off-state. The layered structure may be fabricated in a variety of orientations. A MOSFET structure may be incorporated into the device adjacent to the source region, or, alternatively, the MOSFET structure may be omitted to produce a high-voltage transistor structure having a stand-alone drift region.

197 citations

Patent
04 Jun 1992
TL;DR: In this paper, a driver circuit for driving top and bottom power transistors stacked between two supply terminals is provided, which includes shoot-through reduction means for monitoring the gate-to-source voltages of the two transistors so as to inhibit the turning-on of each power transistor until the gate to source voltage of the other power transistor has fallen to a voltage level indicative of one being OFF.
Abstract: A driver circuit for driving top and bottom power transistors stacked between two supply terminals is provided. The driver circuit includes shoot-through reduction means for monitoring the gate-to-source voltages of the two power transistors so as to inhibit the turning-ON of each power transistor until the gate-to-source voltage of the other power transistor has fallen to a voltage level indicative of the other transistor being OFF. Additionally, the driver circuit which can utilize a bootstrap capacitor for providing enhanced voltages to drive the top power transistor, also includes a bootstrap capacitor recharge means to monitor the output voltage of the circuit so as to inhibit the turning-ON of the top power transistor until the bootstrap capacitor has had sufficient time to recharge.

197 citations

Patent
23 Sep 2003
TL;DR: In this paper, a fifth transistor is connected between a power line and a drain terminal of a first transistor so that a power-supply voltage, namely the fixed voltage required for the compensation of the threshold voltage, is supplied by the power line via the fifth transistor and not by a signal line.
Abstract: In an active-matrix display device and a method for driving the active-matrix display device, a fifth transistor is connected between a power line and a drain terminal of a first transistor so that a power-supply voltage, namely the fixed voltage required for the compensation of the threshold voltage, is supplied by the power line via a fifth transistor and not by a signal line Thus, a sufficient length of time for the threshold voltage compensation period can be maintained, and a second transistor of each pixel can accurately be compensated for threshold voltage irregularities

189 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20234
20225
20211
20203
20196
20189