Topic
Static induction transistor
About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.
Papers published on a yearly basis
Papers
More filters
19 Jun 2000
TL;DR: In this paper, the authors report on a transistor structure which has the special features of precise gate length control through a deposited film thickness; an ultra-thin body for suppression of short channel effects; raised source/drain (S/D) to reduce parasitic resistance; a gate last process compatible with high-k low temperature dielectrics; and a low thermal budget process.
Abstract: We report on a novel transistor structure which has the special features of (1) precise gate length control through a deposited film thickness; (2) an ultra-thin body for suppression of short channel effects; (3) raised source/drain (S/D) to reduce parasitic resistance; (4) a gate-last process compatible with high-k low temperature dielectrics; and (5) a low thermal budget process. Using this structure, transistors with a 9 nm gate length have been fabricated without the use of advanced lithography. To the authors' knowledge, this is the smallest reported functional NMOS transistor.
55 citations
TL;DR: The Insulated Gate Transistor (IGT) as mentioned in this paper is a new power semiconductor device with the high input impedance features of the power MOSFET and the ability to operate at high current densities even exceeding that of power bipolar transistors.
Abstract: The Insulated Gate Transistor (IGT) is a new power semiconductor device with the high input impedance features of the power MOSFET and the ability to operate at high current densities even exceeding that of power bipolar transistors. The high temperature operating characteristics of the device are discussed here. Unlike the power MOSFET whose operating current density decreases by over a factor of 2 when the ambient temperature is raised to 150°C, the IGT is found to maintain its high operating current density at elevated temperatures. The temperature coefficient of the output current is found to be positive at forward drops below 1.5 V and negative at forward drops above 1.5 V. These characteristics make the IGT suitable for applications with high ambient temperatures. The results also indicate that these devices can be paralleled without current hogging problems if the forward conduction occurs at forward voltage drops in excess of 1.5 V.
55 citations
Patent•
24 May 2006TL;DR: A metaloxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed in this article, which comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field.
Abstract: A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.
55 citations
Patent•
04 Feb 2005TL;DR: In this article, a transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described, and the transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment.
Abstract: A transistor having at least one of a source electrode and a drain electrode being formed of a porous film is described. The transistor maintains its characteristics even after being subjected to a high temperature and high humidity environment. The transistor may be used in a circuit board, a display and electronic equipment.
55 citations
Patent•
15 Jul 2014
TL;DR: A semiconductor device includes a photodiode, a first transistor, and a second transistor as mentioned in this paper, where the first transistor has a function of supplying a charge corresponding to incident light to a gate, and the second transistor retains the charge accumulated in the gate.
Abstract: A semiconductor device includes a photodiode, a first transistor, and a second transistor The photodiode has a function of supplying a charge corresponding to incident light to a gate of the first transistor, the first transistor has a function of accumulating the charge supplied to the gate, and the second transistor has a function of retaining the charge accumulated in the gate of the first transistor The second transistor includes an oxide semiconductor
55 citations