Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.

Composite circuit of bipolar transistors and field effect transistors

Abstract: A novel composite circuit comprises a first bipolar transistor with a collector of a first conductivity type connected to a first potential, an emitter of the first conductivity type connected to an output, a second bipolar transistor with a collector of the first conductivity type connected to the output and an emitter of the first conductivity type connected to a second potential, a field effect transistor of a second conductivity type with a gate connected to an input, a source connected to a third potential and a drain connected to the base of the first bipolar transistor, a field effect transistor of the first conductivity type with a gate connected to the input, a drain connected to the base of the first bipolar transistor, and a source connected to the base of the second bipolar transistor, and a unidirectional element inserted between the output and the drain of the field effect transistor of the first conductivity type and having a direction of rectification opposite to that of the PN junction formed between the base and emitter of the first bipolar transistor.

Noise Optimization of Charge Amplifiers With MOS Input Transistors Operating in Moderate Inversion Region for Short Peaking Times

Abstract: The noise of a fast charge sensitive amplifier (CSA) with an input MOS transistor operating in the moderate inversion region is discussed. The MOS transistor operation in the moderate inversion region becomes especially important in multichannel readout systems where limited power dissipation is required. The ENC of a CSA followed by a fast shaper is usually dominated by the voltage noise of the input MOS transistor. We carried out noise minimization for such a CSA, searching for an optimum input transistor width. The analyses were made using a simplified EKV model and were compared to HSPICE simulations using a BSIM3v3 model. We considered several CMOS technology generations with minimum transistor gate length ranging from 0.13 mum to 0.8 mum. We studied the sensitivity of ENC to the input transistor width, and propose a simple formula to estimate the optimum transistor width, which is valid in a wide current density range.

Integrated programmable bit circuit with minimal power requirement

Abstract: A zero-power programmable bit circuit comprised of a programmable-inverter means with an isolation transistor and with an inverter-buffer. The programmable-inverter means is includes at least one enhancement-mode transistor pair with common floating gates and includes a diode-connected transistor. The isolation transistor protects the inverter-buffer from programming voltages. The inverter-buffer may be comprised of an inverter with a feedback transistor.

Circuit for switching and transmitting alternating voltages

Abstract: A circuit for switching and transmitting alternating voltages comprise an MOS transistor, the pn-junctions which surround the source and drain regions being biased in a blocking direction in the driven condition of the transistor, correspondence between the potential difference between gate and alternating voltages and the required drive voltage of the transistor being achieved by a circuit which largely synchronizes gate voltage changes with the alternating voltage to be transmitted.

Overcurrent limiter circuit for switching regulator power supplies

Abstract: A circuit is disclosed which provides overcurrent protection for switching regulator power supplies with soft start and soft turn OFF features. The invention includes first means for sensing the current through the switching transistor of the regulator and second means for providing a voltage signal to the switching transistor deactivation circuitry whenever the current through the switching transistor exceeds a predetermined threshold. In a specific embodiment, the current generator is provided by a transistor biased for nominal operation in its active mode. The means for sensing the current through the switching transistor is provided by a resistor the voltage drop across which provides the input voltage threshold to the bipolar transistor current generator. The current generated by the transistor causes a voltage to quickly develop across an RC network referenced to ground potential. This voltage is then compared to a reference potential by a comparator circuit which provides an electrical signal as an input to the base drive circuit for the switching regulator switching transistor.