Topic
Static induction transistor
About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.
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Patent•
15 Feb 2011
TL;DR: In this article, the authors propose a novel structure for a semiconductor device having a novel architecture, which can hold stored data even when not powered and which has an unlimited number of write cycles.
Abstract: An object is to provide a semiconductor device having a novel structure, which can hold stored data even when not powered and which has an unlimited number of write cycles. A semiconductor device is provided with both a memory circuit including a transistor including an oxide semiconductor (in a broader sense, a transistor whose off-state current is sufficiently small) and a peripheral circuit such as a driver circuit including a transistor including a material other than an oxide semiconductor (in other words, a transistor capable of operating at sufficiently high speed). The peripheral circuit is provided in a lower portion and the memory circuit is provided in an upper portion; thus, the area and size of the semiconductor device can be decreased.
48 citations
Patent•
31 Dec 1992TL;DR: In this paper, a reference voltage generating circuit with an improved temperature compensation function is presented, where the temperature compensation is achieved by appropriately setting a drain current of each transistor, and the transistors for temperature compensation can be formed in the same manufacturing steps.
Abstract: In a reference voltage generating circuit having an improved temperature compensation function, a PMOS transistor forming a constant voltage circuit has the same characteristics as a PMOS transistor forming a negative feedback circuit. As an ambient temperature changes, gate-source voltage and drain current characteristics of each transistor are shifted, but temperature compensation is achieved by appropriately setting a drain current of each transistor. Transistors for the temperature compensation can be formed in the same manufacturing steps, so that temperature compensating effect can be obtained without an additional manufacturing step.
48 citations
Patent•
24 Sep 2003
TL;DR: In this article, a high-side transistor driver with an on/off transistor and a speed-up circuit was presented. But the high-sensor transistor driver was not used to switch on the high side transistor.
Abstract: The high-side transistor driver according to the present invention includes a high-side transistor, a low-side transistor, a drive-buffer and an on/off transistor When the low-side transistor is turned on, a charge-pump diode and a bootstrap capacitor produce a floating voltage The drive-buffer will propagate the floating voltage to switch on the high-side transistor The on/off transistor is used to switch the drive-buffer The high-side transistor drive further includes a speed-up circuit The speed-up circuit has a capacitive coupling for generating a differential signal When the on/off transistor is turned off, the speed-up circuit accelerates the charge-up of the parasitic capacitor of the on/off transistor, thus accelerating high-side transistor switching
48 citations
Patent•
08 Dec 1975TL;DR: The disclosed protection circuit as discussed by the authors is suitable for providing protection of transistors included in integrated circuits such as regulators and power amplifiers, including thermal shutdown, safe area and current control circuits.
Abstract: The disclosed protection circuit which is suitable for providing protection of transistors included in integrated circuits such as regulators and power amplifiers, includes thermal shutdown, safe area and current control circuits. The current control portion includes a sense transistor connected substantially in parallel with the transistor to be protected. In monolithic integrated circuit applications, the sense transistor has an emitter area that is a predetermined ratio of the emitter area of the protected transistor. A "sense resistor" is connected to the sense transistor and develops a control signal which is proportional to the instantaneous current being conducted by the protected transistor. A threshold circuit is coupled between the sense resistor and the drive circuit for the protected transistor and responds to the magnitude of the control signal crossing a predetermined threshold to remove or reduce the drive to the protected transistor.
48 citations
Patent•
13 Dec 1990TL;DR: In this paper, the authors present a method and structure for actively controlling the voltage applied to the channel of field effect transistors, where a transistor is fabricated to connect the source and drain of the channel transistor to a reference voltage.
Abstract: The described embodiments of the present invention provide a method and structure for actively controlling the voltage applied to the channel of field effect transistors. In the described embodiments, a transistor connected to the channel region is fabricated. The channel transistor has opposite conductivity type to the transistor using the main channel region. The source of the channel transistor is connected to the channel and the drain of the channel transistor is connected to a reference voltage. The same gate is used to control the channel transistor and the main transistor. When a voltage which causes the main transistor to be on is applied, the channel transistor is off, thus allowing the channel to float and allowing higher drive current. On the other hand, when a voltage to turn off the main transistor is applied, the channel transistor is turned on, thus clamping the channel region to the reference voltage. This allows for consistent threshold voltage control of the main transistor.
48 citations