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Static induction transistor

About: Static induction transistor is a research topic. Over the lifetime, 8155 publications have been published within this topic receiving 107058 citations. The topic is also known as: SIT.


Papers
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TL;DR: In this paper, the static induction transistors (SITs) with various organic semiconductor materials, such as pentacene, perylene, tris(quinoline-8-hydroxylate)aluminum (Alq), and N,N′-di(4-methylphenyl)-N, N′-diphenylbenzidine (TPD), used as the active element.
Abstract: We have fabricated and studied static induction transistors (SITs) with various organic semiconductor materials, such as pentacene, perylene, tris(quinoline-8-hydroxylate)aluminum (Alq), and N,N′-di(4-methylphenyl)-N,N′-diphenylbenzidine (TPD), used as the active element. The former two resulted in unsuccessful operation due to a short caused by pinholes formed in the films. Modification of the deposition rates did not change the outcome. The latter two provided successful operation. No fatal pinholes were observed in the thin films of the latter two. It is thus shown that the morphology has crucial effect in the operation of SITs. A transition from linear to nonlinear behavior has been observed in the drain-source I–V characteristics of Alq and TPD.

42 citations

Book
01 Jan 1961

42 citations

Patent
Akio Hosokawa1
17 Jun 1997
TL;DR: An overcurrent sensing circuit for sensing an overcurrent flowing through a power MOS transistor is described in this article, where a voltage drop equal to the voltage across the drain and source of a power mOS transistor that changes due to change in a load current is generated in a sensing resistor that is connected between the source of the sensing MOS transistors having its gate and drain connected in common with those of the power transistors.
Abstract: An overcurrent sensing circuit for sensing an overcurrent flowing through a power MOS transistor is described. A voltage drop equal to the voltage across the drain and source of a power MOS transistor that changes due to change in a load current is generated in a sensing resistor that is connected between the source of a sensing MOS transistor having its gate and drain connected in common with those of the power MOS transistor and the source of the power MOS transistor due to current that flows through the sensing MOS transistor. This voltage is inputted to a comparator that has an added offset voltage, and the comparator judges that the power MOS transistor is in an overcurrent condition when this inputted voltage exceeds an input offset voltage value that is set inside the comparator.

41 citations

Patent
27 Feb 2014
TL;DR: In this paper, a switching transistor is disposed between one current terminal of the driving transistor and a light emitting element, and the switching transistor turns off during non-light emission period.
Abstract: In a display apparatus including a switching transistor, a correction voltage for eliminating an effect of a variation in a characteristic of a driving transistor is stored in a storage capacitor. The switching transistor is disposed between one current terminal of the driving transistor and a light emitting element. The switching transistor turns off during the non-light emission period thereby to electrically disconnect the light emitting element from the one current terminal of the driving transistor thereby preventing a leakage current from flowing through the light emitting element during the period in which the correction unit operates, and thus preventing the correction voltage from having an error due to the leakage current.

41 citations

Patent
John M. Callahan1
13 Jan 1995
TL;DR: In this paper, a charge-kicker programming circuit for programming anti-fuse links in integrated-circuit memory devices was proposed, which permits smaller feature sizes and a correspondingly lower breakdown voltage by using reduced internal voltage levels to generate a gate voltage for a series pass transistor.
Abstract: A "charge-kicker" programming circuit for programming anti-fuse links in integrated-circuit memory devices permits smaller feature sizes and a correspondingly lower breakdown voltage by using reduced internal voltage levels to generate a gate voltage for a series pass transistor A series pass transistor gates a high voltage programming signal (typically 13 volts) to a high-voltage programming line Selection circuits steer the high voltage programming signal to various columns of anti-fuse elements A fixed voltage, insufficient to turn on the series pass transistor is applied to the gate terminal of the series pass transistor An alternating voltage is applied directly onto the gate terminal of the series pass transistor through a capacitor so that the peaks of the alternating voltage turn on the series pass transistor which gates the programming voltage to the main high voltage programming line for the anti-fuse memory array

41 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20234
20225
20211
20203
20196
20189