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Showing papers on "Strained silicon published in 1970"


Journal ArticleDOI
TL;DR: Backscattering and channeling effect measurements with MeV 4He ions were used to determine the depth dependence of the composition of amorphous silicon nitride layers on single‐crystal silicon.
Abstract: Backscattering and channeling effect measurements with MeV 4He ions were used to determine the depth dependence of the composition of amorphous silicon nitride layers on single‐crystal silicon. The composition was stoichiometric over the entire layer for high ratios of NH3 to SiH4 used in the deposition reaction at 850°C. For lower ratios, a silicon excess was found, and in extreme cases, the silicon excess was located predominantly near the interface.

25 citations


Journal ArticleDOI
TL;DR: The silicon-silicon dioxide interface is probably the most well characterised solid- solid interface as discussed by the authors, and extensive investigations of the electrical properties of this interface have been carried out.

20 citations


Journal ArticleDOI
TL;DR: The room-temperature current-voltage characterstics of vapour-deposited silicon nitride films and silicon dioxide-nitride composite structures have been investigated in this paper, where it is observed that conduction is bulk-limited and conforms to the Poole-Frenkel electronic transport mechanism.
Abstract: The room-temperature current-voltage characterstics of vapour-deposited silicon nitride films and silicon dioxide-nitride composite structures have been investigated. It is observed that conduction is bulk-limited and conforms to the Poole-Frenkel electronic transport mechanism. However, in the composite structures, the current-limiting mechanism appears to be due to nitride layers only.

12 citations


Patent
09 Jan 1970
TL;DR: In this article, a SILICON DIOXIDE SEPARATORY LAYER in COMBINATION with an INITIAL SILICon NITRIDE COATING over the EMITTER and BASE regions in the SEMICONDUCTOR SUBSTRATE is presented.
Abstract: IN A SEMICONDUCTOR DEVICE, THE EMITTER AND BASE METAL CONTACT STRIPES ARE AT DIFFERENT LEVELS AND ARE SEPARATED BY SILICON DIOXIDE AND SILICON NITRIDE. BY USING SUCH A SILICON DIOXIDE SEPARATORY LAYER IN COMBINATION WITH AN INITIAL SILICON NITRIDE COATING OVER THE EMITTER AND BASE REGIONS IN THE SEMICONDUCTOR SUBSTRATE, THE SILICON NITRIDE COATING BEING ETCHED DURING PROCESSING, A HIGH SPEED TRANSISTOR HAVING A VERY SMALL EMITTER-BASE CONTACT SPACING, AND A SMALL EMITTER STRIPE WIDTH IS OBTAINED. D R A W I N G

10 citations


Patent
26 Oct 1970
TL;DR: In this paper, a WAFER is used to support the formation of interdependent CIRCUITS in a single-carystal SILICON of one CONDUCTIVITY type.
Abstract: A SEMICONDUCTOR WAFER, SUITABLE FOR USE IN FORMING INTEGRATED CIRCUITS, CONTAINS, ON A SUBSTRAATE, ISLANDS OF SINGLE CRYSTAL SILICON OF ONE CONDUCTIVITY TYPE, EACH ISLAND BEING ISOLATED FROM ADJACENT ISLANDS BY WALLS OF POLYCRYSTALLINE SILICON OF OPPOSITE CONDUCTIVITY TYPE. POLYCRYSTALLINE SILICON PIPES IN THE SINGLE CRYSTAL SILICON PROVIDE CONTROLLED RESISTANCE CONTACTS FROM THE TOP SURFACE OF THE SINGLE CRYSTAL SILICON TO BURIED COLLECTOR LAYERS UNDERLYING THE SINGLE CRYSTAL SILICON.

9 citations


Patent
L Cordes1, W Engeler1
15 Dec 1970
TL;DR: In this paper, a high temperature low ohmic electrical contact is made to a silicon body by forming a very thin layer of silicon carbide over the silicon body and then forming a metallic layer such as a refractory metal, over the Silicon carbide to form a high quality low-ohm contact to the surface of the silicon.
Abstract: A high temperature low ohmic electrical contact is made to a silicon body by forming a very thin layer of silicon carbide over the silicon body and then forming a metallic layer, such as a refractory metal, over the silicon carbide to form a high quality low ohmic contact to the surface of the silicon body.

8 citations


Journal ArticleDOI
TL;DR: In this paper, a simultaneous reflection technique has been devised using photographic recording to determine the sense of the crystallographic polarity of silicon carbide by means of the small X-ray anomalous dispersion effect.
Abstract: Silicon carbide is a polar crystal consisting, in all its structural modifications, of identical networks of silicon and carbon atoms mutually displaced along the c axis. Opposite surfaces are formed by either silicon or carbon layers. The sense of the crystallographic polarity may be determined by means of the small X-ray anomalous dispersion effect. In order to minimize the experimental errors a simultaneous reflection technique has been devised using photographic recording. The results are consistent with theory and agree with those given by etching.

3 citations


Patent
J Adamic1
23 Sep 1970
TL;DR: In this paper, the surface of the doped silicon is more highly doped between the sources and drains of adjacent transistors than it is at the channel area of the substrate for the several transistors.
Abstract: When several metal oxide insulated gate field effect transistors are put on a doped silicon substrate and the interconnection leads to the transistors run along the surface of the silicon substrate, being insulated therefrom, the silicon material between the source or drain area of the substrate for one transistor and the source or drain of another transistor may act as a channel between such other sources or drains. This channel may be turned on by the voltage applied to the gate connection or lead, causing improper operation of the several transistors. To prevent this, the surface of the doped silicon is more highly doped between the sources and drains of adjacent transistors than it is at the channel area of the substrate for the several transistors. This may be accomplished by applying a doped silicon dioxide or glass over the whole surface of the doped silicon substrate, this doped glass then being removed from the channel areas of the substrate.

3 citations