Topic
Stub (electronics)
About: Stub (electronics) is a research topic. Over the lifetime, 8172 publications have been published within this topic receiving 75018 citations.
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30 Sep 1999
TL;DR: In this article, a harmonic rejection load pull tuner is described, which can be used to perform input or output characterisation by selectively reflecting out at least one harmonic frequency of the base frequency.
Abstract: The present invention discloses a harmonic rejection load pull tuner. The tuner of the invention has a large-band tuner having an input and an output, and a transmission line having a longitudinal axis. The transmission line has an input connected to the output of a DUT and an output connected to the input of the large-band tuner. In parallel with the transmission line is at least one stub, the at least one stub having a length adapted to reflect out an nth order harmonic of a base frequency, where n is an integer greater than 1. The tuner of the present invention can be used to perform input or output characterisation (or both) of a DUT, by selectively reflecting out at least one harmonic frequency of the base frequency. Consequently, the characterisation of the DUT is improved, since the effects of the harmonics are considerably reduced. The present invention also concerns a method for performing input or output characterisation.
24 citations
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TL;DR: In this article, a new band-notch ultrawideband (UWB) printed monopole antenna is proposed, where the bandnotch characteristic is realized by introducing a microstrip feeder with a tuning stub.
Abstract: A new band-notch ultrawideband (UWB) printed monopole antenna is proposed, where the band-notch characteristic is realized by introducing a microstrip feeder with a tuning stub. The simulation results agree well with the measured ones, showing that the proposed antenna provides an operating band ranging from 2.9 to 11.6 GHz, a notched band from 5.0 to 5.9 GHz, and a good omni-directional far-field radiation in the H-plane. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1908–1911, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24507
24 citations
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29 Sep 1994
TL;DR: In this paper, a transmission line-to-waveguide transition that includes a microstrip impedance transformer for matching the impedance of an input transmission line to that of a flared slotline is disclosed.
Abstract: A transmission line-to-waveguide transition that includes a microstrip impedance transformer for matching the impedance of an input transmission line to that of a flared slotline is disclosed. The slotline's width is sufficiently small such that when the transition is inserted into a waveguide the slotline is spaced inward from the waveguide's inner walls. A balun bi-directionally couples the unbalanced signal on the microstrip to a balanced signal on the slotline. The signal propagates along the slotline and is capacitively coupled to the waveguide. A trimmable tuning stub is used to adjust the resonant frequency of a parasitic cavity formed between the transition and the waveguide to increase the transition's effective bandwidth. A tapered dielectric insert is positioned inside the waveguide to decrease its size and to improve the coupling efficiency of the transition.
24 citations
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TL;DR: An electrically tunable ultracompact plasmonic modulator with large modulation strength (>10 dB) and a small footprint via plAsmon-induced transparency (PIT) configuration and promise in developing nanoscale modulators for next generation compact photonic/plasmonics integrated circuits is demonstrated.
Abstract: We demonstrate an electrically tunable ultracompact plasmonic modulator with large modulation strength (>10 dB) and a small footprint (~1 μm in length) via plasmon-induced transparency (PIT) configuration. The modulator based on a metal-oxide-semiconductor (MOS) slot waveguide structure consists of two stubs embedded on the same side of a bus waveguide forming a coupled system. Heavily n-doped indium tin oxide (ITO) is used as the semiconductor in the MOS waveguide. A large modulation strength is realized due to the formation of the epsilon-near-zero (ENZ) layer at the ITO-oxide interface at the wavelength of the modulated signal. Numerical simulation results reveal that such a significant modulation can be achieved with a small applied voltage of ~3V. This result shows promise in developing nanoscale modulators for next generation compact photonic/plasmonic integrated circuits.
24 citations
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14 Mar 1997TL;DR: An integrated component providing the function of both a conventional directional coupler and a low-pass filter having two attenuation poles at a specified frequency band without changing the line length is presented in this article.
Abstract: An integrated component providing the function of both a conventional directional coupler and a low-pass filter having two attenuation poles at a specified frequency band without changing the line length. Stub lines are connected to both ends of a main transmission line of a directional coupler. A frequency of the attenuation poles is adjustable by characteristic impedance, terminating conditions, and line length of the stub lines.
24 citations