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Substrate (electronics)

About: Substrate (electronics) is a(n) research topic. Over the lifetime, 116158 publication(s) have been published within this topic receiving 1370499 citation(s). The topic is also known as: wafer. more


Open accessJournal ArticleDOI: 10.1038/NNANO.2010.172
Cory Dean1, Andrea Young1, Inanc Meric1, Changgu Lee  +7 moreInstitutions (2)
Abstract: Graphene devices on standard SiO(2) substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. Although suspending the graphene above the substrate leads to a substantial improvement in device quality, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved with a suspended sample. Hexagonal boron nitride (h-BN) is an appealing substrate, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps. It also has a lattice constant similar to that of graphite, and has large optical phonon modes and a large electrical bandgap. Here we report the fabrication and characterization of high-quality exfoliated mono- and bilayer graphene devices on single-crystal h-BN substrates, by using a mechanical transfer process. Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2). These devices also show reduced roughness, intrinsic doping and chemical reactivity. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics and allows for the realization of more complex graphene heterostructures. more

Topics: Bilayer graphene (66%), Graphene (62%), Boron nitride (55%) more

5,482 Citations

Journal ArticleDOI: 10.1109/TJMJ.1987.4549593
Abstract: The depth-profiles of amorphous TbFeCo films sputtered onto polycarbonate substrate were studied by X-ray photoelectron spectroscopy. Oxidized metals, oxides and hydroxides for example, and adsorbed impurities were found to exist mainly in the vicinity of the film surface and film/ substrate interface. more

Topics: Electron spectroscopy (55%), Amorphous solid (54%), X-ray photoelectron spectroscopy (54%) more

2,322 Citations

Journal ArticleDOI: 10.1002/ADMA.201001784
Zhipeng Huang1, Nadine Geyer1, Peter Werner1, Johannes de Boor1  +1 moreInstitutions (1)
11 Jan 2011-Advanced Materials
Abstract: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled. more

Topics: Dry etching (73%), Reactive-ion etching (73%), Isotropic etching (72%) more

1,512 Citations

Open accessJournal ArticleDOI: 10.1002/SMLL.201102654
Yongjie Zhan1, Zheng Liu1, Sina Najmaei1, Pulickel M. Ajayan1  +1 moreInstitutions (1)
10 Apr 2012-Small
Abstract: Atomic-layered MoS(2) is synthesized directly on SiO(2) substrates by a scalable chemical vapor deposition method. The large-scale synthesis of an atomic-layered semiconductor directly on a dielectric layer paves the way for many facile device fabrication possibilities, expanding the important family of useful mono- or few-layer materials that possess exceptional properties, such as graphene and hexagonal boron nitride (h-BN). more

1,455 Citations

Journal ArticleDOI: 10.1021/JA064380L
Andreas Kay1, Ilkay Cesar1, Michael Grätzel1Institutions (1)
Abstract: Thin films of silicon-doped Fe2O3 were deposited by APCVD (atmospheric pressure chemical vapor deposition) from Fe(CO)5 and TEOS (tetraethoxysilane) on SnO2-coated glass at 415 °C. HRSEM reveals a highly developed dendritic nanostructure of 500 nm thickness having a feature size of only 10−20 nm at the surface. Real surface area determination by dye adsorption yields a roughness factor of 21. XRD shows the films to be pure hematite with strong preferential orientation of the [110] axis vertical to the substrate, induced by silicon doping. Under illumination in 1 M NaOH, water is oxidized at the Fe2O3 electrode with higher efficiency (IPCE = 42% at 370 nm and 2.2 mA/cm2 in AM 1.5 G sunlight of 1000 W/m2 at 1.23 VRHE) than at the best reported single crystalline Fe2O3 electrodes. This unprecedented efficiency is in part attributed to the dendritic nanostructure which minimizes the distance photogenerated holes have to diffuse to reach the Fe2O3/electrolyte interface while still allowing efficient light abso... more

Topics: Chemical vapor deposition (53%), Thin film (53%), Nanostructure (53%) more

1,362 Citations

No. of papers in the topic in previous years

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Topic's top 5 most impactful authors

Shunpei Yamazaki

223 papers, 4.9K citations

Leonard Forbes

65 papers, 3.9K citations

Jagdish Narayan

49 papers, 860 citations

Devendra K. Sadana

47 papers, 620 citations

Kangguo Cheng

35 papers, 296 citations

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