Topic
Substrate (electronics)
About: Substrate (electronics) is a research topic. Over the lifetime, 116158 publications have been published within this topic receiving 1370499 citations. The topic is also known as: wafer.
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TL;DR: In this paper, the effects of the substrate on the determination of mechanical properties of thin films by nanoindentation were examined, and the properties of aluminum and tungsten films on the following substrates: aluminum, glass, silicon and sapphire.
1,410 citations
TL;DR: In this paper, a single-crystal gallium oxide (Ga2O3) metal-semiconductor field effect transistors (MESFETs) with a gate length of 4 μm and a source-drain spacing of 20 μm is presented.
Abstract: We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a semi-insulating β-Ga2O3 (010) substrate by molecular-beam epitaxy. We fabricated a circular MESFET with a gate length of 4 μm and a source–drain spacing of 20 μm. The device showed an ideal transistor action represented by the drain current modulation due to the gate voltage (VGS) swing. A complete drain current pinch-off characteristic was also obtained for VGS < −20 V, and the three-terminal off-state breakdown voltage was over 250 V. A low drain leakage current of 3 μA at the off-state led to a high on/off drain current ratio of about 10 000. These device characteristics obtained at the early stage indicate the great potential of Ga2O3-based electrical devices for future power device applications.
1,273 citations
TL;DR: In this paper, a two dimensional nucleation during the initial growth was observed by in situ reflection high energy electron diffraction, followed by a morphology transition to 3D nucleation by using molecular beam epitaxy.
Abstract: ZnO single crystal thin films were grown on c-plane sapphire using oxygen microwave plasma assisted molecular beam epitaxy. Atomically flat oxygen-terminated substrate surfaces were obtained by pre-growth cleaning procedures involving an oxygen plasma treatment. A two dimensional nucleation during the initial growth which is followed by a morphology transition to three dimensional nucleation was observed by in situ reflection high energy electron diffraction. X-ray diffraction (XRD) and photoluminescence investigations suggest that the ZnO epilayer consists of a high quality layer on top of a transition layer containing a high density of defects in the interfacial region. A full width at half maximum (FWHM) of 0.005° is obtained for the ZnO(0002) diffraction peak in an XRD rocking curve, while a broad tail extending from the peak can also be observed. The photoluminescence spectra exhibit dominant bound exciton emission with a FWHM of 3 meV at low temperatures and free exciton emission combined with a ver...
1,261 citations
TL;DR: In this article, an atom-thin, ordered, two-dimensional multi-phase film was grown in situ through germanium molecular beam epitaxy using a gold surface as a substrate.
Abstract: We have grown an atom-thin, ordered, two-dimensional multi-phase film in situ through germanium molecular beam epitaxy using a gold (111) surface as a substrate. Its growth is similar to the formation of silicene layers on silver (111) templates. One of the phases, forming large domains, as observed in scanning tunneling microscopy, shows a clear, nearly flat, honeycomb structure. Thanks to thorough synchrotron radiation core-level spectroscopy measurements and advanced density functional theory calculations we can identify it as a ?3????3 R(30?) germanene layer in conjunction with a ?7????7 R(19.1?) Au(111) supercell, presenting compelling evidence of the synthesis of the germanium-based cousin of graphene on gold.
1,230 citations
TL;DR: Scanning tunnelling microscopy is used to show that graphene conforms to hBN, as evidenced by the presence of Moiré patterns, but contrary to predictions, this conformation does not lead to a sizeable band gap because of the misalignment of the lattices.
Abstract: Using boron nitride as a substrate for graphene has been suggested as a promising way to reduce the disorder in graphene caused by space fluctuations. It is now shown by scanning tunnelling microscopy that graphene conforms perfectly to boron nitride and the charge fluctuations are minimal compared with the conventionally used substrate, silica. Boron nitride could really be the natural graphene substrate. Graphene has demonstrated great promise for future electronics technology as well as fundamental physics applications because of its linear energy–momentum dispersion relations which cross at the Dirac point1,2. However, accessing the physics of the low-density region at the Dirac point has been difficult because of disorder that leaves the graphene with local microscopic electron and hole puddles3,4,5. Efforts have been made to reduce the disorder by suspending graphene, leading to fabrication challenges and delicate devices which make local spectroscopic measurements difficult6,7. Recently, it has been shown that placing graphene on hexagonal boron nitride (hBN) yields improved device performance8. Here we use scanning tunnelling microscopy to show that graphene conforms to hBN, as evidenced by the presence of Moire patterns. However, contrary to predictions9,10, this conformation does not lead to a sizeable band gap because of the misalignment of the lattices. Moreover, local spectroscopy measurements demonstrate that the electron–hole charge fluctuations are reduced by two orders of magnitude as compared with those on silicon oxide. This leads to charge fluctuations that are as small as in suspended graphene6, opening up Dirac point physics to more diverse experiments.
1,221 citations