Substrate (electronics)

About: Substrate (electronics) is a research topic. Over the lifetime, 116158 publications have been published within this topic receiving 1370499 citations. The topic is also known as: wafer.

The microstructure of sputter-deposited coatings

Abstract: Microstructure is a critical consideration when polycrystalline or amorphous thin films are used for applications such as microcircuit metallization layers and diffusion barriers. The trend in device fabrication toward lower processing temperatures means that such coatings must often be deposited at substrate temperatures T that are low relative to the coating material melting point Tm. The structure of vapor deposited coatings grown under these conditions consists typically of a columnar growth structure, defined by voided open boundaries, which is superimposed on a microstructure which may be polycrystalline (defined by metallurgical grain boundaries) or amorphous. The voided growth structure is clearly undesirable for most applications. Its occurrence is a fundamental consequence of atomic shadowing acting in concert with the low adatom mobilities that characterize low T/Tm deposition, and its formation can be enhanced by the surface irregularities which are common to microcircuit fabrication. This pap...

Thin-film transistor

Abstract: (57) Abstract: Provided is a thin film transistor including a ZnO film as a semiconductor active layer, which suppresses a leak current of a gate insulating film and obtains good transistor characteristics. A thin film transistor T1 formed on an insulating substrate 1. On the substrate 1, a gate electrode 2, a gate insulating film 31, an intermediate layer 32, and a semiconductor active layer 4 made of ZnO are sequentially formed. On the semiconductor active layer 4, a source electrode 5 and a drain electrode 6 are formed. ing. The mid layer 32 It is provided to prevent mobile ions (Zn ions) from entering the gate insulating film 32 from the semiconductor active layer (ZnO film) 4 and is made of silicon nitride.

Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby

Abstract: A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.

Oxide thin film

Abstract: An object of the invention is to provide an oxide thin film which exhibits a widegap or transparency and p-type conductivity although it has heretofore been very difficult to form. The oxide thin film formed on a substrate contains copper oxide and strontium oxide as a main component and exhibits p-type conductivity at a bandgap of at least 2 eV.

Method for making electronic devices using metal oxide nanoparticles

Abstract: A method of making a thin film transistor comprises (a) solution depositing a dispersion comprising semiconducting metal oxide nanoparticles onto a substrate, (b) sintering the nanoparticles to form a semiconductor layer, and (c) optionally subjecting the resulting semiconductor layer to post-deposition processing.