Substrate (printing)

About: Substrate (printing) is a research topic. Over the lifetime, 229808 publications have been published within this topic receiving 1623039 citations.

Lithographic Apparatus and Device Manufacturing Method

Abstract: A lithographic apparatus according to the present invention, an illumination system configured to condition a radiation beam; Support configured to impart the radiation beam with a pattern in its cross-section to support a patterning device that can form a patterned radiation beam; A substrate table configured to hold a substrate; A projection system configured to project the patterned radiation beam onto a target portion of the substrate; A final element of said projection system and a liquid supply system configured to fill a space between the substrate in at least partially liquid; A seal member arranged substantially to contain said liquid within said space between said final element of the projection system and the substrate; And it includes elements for controlling and / or compensate for evaporation of immersion liquid from the substrate.

High throughput screen

Abstract: The present invention relates to a structure comprising a biological membrane and a porous or perforated substrate, a biological membrane, a substrate, a high throughput screen, methods for production of the structure membrane and substrate, and a method for screening a large number of test compounds in a short period. More particularly it relates to a structure comprising a biological membrane adhered to a porous or perforated substrate, a biological membrane capable of adhering with high resistance seals to a substrate such as perforated glass and the ability to form sheets having predominantly an ion channel or transporter of interest, a high throughput screen for determining the effect of test compounds on ion channel or transporter activity, methods for manufacture of the structure, membrane and substrate, and a method for monitoring ion channel or transporter activity in a membrane.

Inkjet printing of single-crystal films

Abstract: Printing electronic devices using semiconducting 'ink' is seen as a promising route to cheap, large-area and flexible electronics, but the performance of such devices suffers from the relatively poor crystallinity of the printed material. Hiromi Minemawari and colleagues have developed an inkjet-based printing technique involving controlled mixing on a surface of two solutions — the semiconductor (C8-BTBT) in its solvent and a liquid in which the semiconductor is insoluble. The products of this antisolvent crystallization technique are thin semiconductor films with exceptionally high and uniform crystallinity. The use of single crystals has been fundamental to the development of semiconductor microelectronics and solid-state science1. Whether based on inorganic2,3,4,5 or organic6,7,8 materials, the devices that show the highest performance rely on single-crystal interfaces, with their nearly perfect translational symmetry and exceptionally high chemical purity. Attention has recently been focused on developing simple ways of producing electronic devices by means of printing technologies. ‘Printed electronics’ is being explored for the manufacture of large-area and flexible electronic devices by the patterned application of functional inks containing soluble or dispersed semiconducting materials9,10,11. However, because of the strong self-organizing tendency of the deposited materials12,13, the production of semiconducting thin films of high crystallinity (indispensable for realizing high carrier mobility) may be incompatible with conventional printing processes. Here we develop a method that combines the technique of antisolvent crystallization14 with inkjet printing to produce organic semiconducting thin films of high crystallinity. Specifically, we show that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid–air interfaces. Using this approach, we have printed single crystals of the organic semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) (ref. 15), yielding thin-film transistors with average carrier mobilities as high as 16.4 cm2 V−1 s−1. This printing technique constitutes a major step towards the use of high-performance single-crystal semiconductor devices for large-area and flexible electronics applications.

Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp

Abstract: The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of ‘soft adhesion’ to guide the transfer, assembly and/or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.

Process for atomic layer deposition

Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.