Showing papers on "Subthreshold conduction published in 1972"

Subthreshold drain leakage currents in MOS field-effect transistors

Abstract: There are two contributions to the drain-source leakage current in MOS field-effect transistors for gate voltages below the extrapolated threshold voltage (V tx ) : 1) reverse-bias drain junction leakage current, and 2) a surface channel current that flows when the surface is weakly inverted. Nearly six orders of magnitude of drain-source current from the background limit imposed by the drain junction leakage to the lower limits of detection of most curve tracers (0.05 µA) are controlled by gate-source voltages below the extrapolated threshold voltage. It is shown that this current flows only for gate voltages above the intrinsic voltage V i , the gate voltage at which the silicon surface becomes intrinsic. For gate voltages between V i and V tx the surface is weakly inverted with the resulting channel conductivity being responsible for the drain-source current "tails" observed for gate voltages below V tx . The importance of the intrinsic voltage in designing low-leakage CMOS and standard PMOS circuitry is discussed.

Propagated subthreshold oscillatory response and classical electrotonic response of squid giant axon.

Abstract: The small-signal subthreshold response of the excised squid giant axon to an internal point source of current is oscillatory and propagates with decrement at a velocity close to the spike velocity.

Purity evaluation of n type GaAs LSA diodes from low-field temperature-dependent mobility

Abstract: Measurements are presented of the temperature and impurity dependence of the subthreshold current-voltage characteristic of n type GaAs LSA diodes. They are compared with the theoretical calculations of Ruch and Fawcett; and a simple technique is derived for purity assessment of assembled diodes.

On the response of a nerve to a sub-threshold stimulus— a self similar approach

Abstract: This work examines the partial differential equation describing the response of a nerve fiber to a subthreshold current stimulus and shows that it is of the type that can be treated analytically by using the method of self-similar solution of partial differential equations.

An analysis of excitation thresholds in nonlinear distributed neuristor circuits

Abstract: The problem of determining excitation thresholds for nonlinear, active, distributed neuristor circuits is considered. A solution is obtained in the form of an analytic condition which suffices to guarantee that a given disturbance is subthreshold.