Topic
Subthreshold conduction
About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.
Papers published on a yearly basis
Papers
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07 Sep 1998TL;DR: In this article, the authors present different design techniques such as multiple threshold voltage, dynamic threshold control, substrate biasing, and leakage control using transistor stacking to achieve large improvements in leakage power during both stand-by and active mode of operation.
Abstract: Lowering supply voltage is one of the most effective ways of reducing power dissipation. Low supply voltage requires the device threshold to be reduced in order to maintain performance. Due to the exponential relationship between the leakage current and the transistor threshold voltage in the weak inversion region, static current (and hence, static power power dissipation) can no longer be ignored. In this paper the author presents different design techniques such as multiple threshold voltage, dynamic threshold control, substrate biasing, and leakage control using transistor stacking to achieve large improvements in leakage power during both stand-by and active mode of operation.
64 citations
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TL;DR: The linearization procedure, coupled with numerical inversion of the Laplace transform, proves to be a convenient approach which predicts at least qualitatively the subthreshold behavior of the nonlinear system.
64 citations
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TL;DR: The results show the variation of channel potential and subthreshold swing with channel length, gate bias, and oxide thickness, which will provide some guidance for the integrated circuit designs.
64 citations
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08 Mar 1995TL;DR: In this paper, a semiconductor structure with large tile angle boron implant is provided for reducing threshold shifts or rolloff at the channel edges, by minimizing threshold shifts, short channel effects and sub-threshold currents at or near the substrate surface.
Abstract: A semiconductor structure with large tile angle boron implant is provided for reducing threshold shifts or rolloff at the channel edges. By minimizing threshold shifts, short channel effects and subthreshold currents at or near the substrate surface are lessened. The semiconductor structure is prepared by implanting boron at a non-perpendicular into the juncture between the channel and the source/drain as well as the juncture between the field areas and the source/drain. Placement of boron into these critical regions replenishes segregating and redistributing threshold adjust implant species and channel stop implant species resulting from process temperature cycles. Using lighter boron ions allow for a lesser annealing temperature and thereby avoids the disadvantages of enhanced redistribution and diffusion caused by high temperature anneal.
64 citations
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TL;DR: In this paper, the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor were studied, and a new dynamic threshold MOS-FET, electrically induced body (EIB) DTMOS, was proposed, which has a very large body effect effect factor at low threshold voltage and high current drive at low supply voltage.
Abstract: We have studied the characteristic trade-offs in low power and low voltage MOSFETs from the viewpoint of back-gate control and body effect factor. Previously reported MOSFET structures are classified into four categories in terms of back-gate structures. It is shown that a MOSFET with a fixed back-bias has only a limited current drive at low voltage irrespective of device structures, while current drive of a dynamic threshold MOSFET with body tied to gate is more enhanced with increasing body effect factor. We have proposed a new dynamic threshold MOSFET, electrically induced body (EIB) DTMOS, which has a very large body effect factor at low threshold voltage and high current drive at low supply voltage. key words: MOSFET, low power, low voltage, variable thresh-
64 citations