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Subthreshold conduction

About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.


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Journal ArticleDOI
TL;DR: A facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect transistors by increasing and decreasing the amount of sulfur vacancies in the MoS2 surface, which demonstrates for the first time the ease of tuning the Vth of MoS1 transistors.
Abstract: Controlling the threshold voltage (Vth) of a field-effect transistor is important for realizing robust logic circuits. Here, we report a facile approach to achieve bidirectional Vth tuning of molybdenum disulfide (MoS2) field-effect transistors. By increasing and decreasing the amount of sulfur vacancies in the MoS2 surface, the Vth of MoS2 transistors can be left- and right-shifted, respectively. Transistors fabricated on perfect MoS2 flakes are found to exhibit two-fold enhancement in mobility and a very positive Vth. More importantly, our elegant hydrogen treatment is able to tune the large Vth to a small value without any performance degradation simply by reducing the atomic ratio of S:Mo slightly; in other words, creating a certain amount of sulfur vacancies in the MoS2 surface, which generate defect states in the band gap of MoS2 that mediate conduction of a MoS2 transistor in the subthreshold regime. First-principles calculations further indicate that the edge and width of defect band can be tuned according to the vacancy density. This work not only demonstrates for the first time the ease in tuning the Vth of MoS2 transistors, but also offers a process technology solution that is critical for further development of MoS2 as a mainstream electronic material.

56 citations

Journal ArticleDOI
TL;DR: A parametric model is presented which covers the subthreshold and strong inversion regions with a continuous transition between these regions with the effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation.
Abstract: The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.

55 citations

Proceedings ArticleDOI
11 Nov 2010
TL;DR: A circuit architecture for compact analog VLSI implementation of the Izhikevich neuron model, which efficiently describes a wide variety of neuron spiking and bursting dynamics using two state variables and four adjustable parameters, is presented.
Abstract: We present a circuit architecture for compact analog VLSI implementation of the Izhikevich neuron model, which efficiently describes a wide variety of neuron spiking and bursting dynamics using two state variables and four adjustable parameters. Log-domain circuit design utilizing MOS transistors in subthreshold results in high energy efficiency, with less than 1pJ of energy consumed per spike. We also discuss the effects of parameter variations on the dynamics of the equations, and present simulation results that replicate several types of neural dynamics. The low power operation and compact analog VLSI realization make the architecture suitable for human-machine interface applications in neural prostheses and implantable bioelectronics, as well as large-scale neural emulation tools for computational neuroscience.

55 citations

Journal ArticleDOI
G.W. Taylor1
TL;DR: In this article, a model is presented to describe the above-threshold characteristics of short-channel Insulated Gate Field Effect Transistor (IGFET) when they are affected by the proximity of the source and drain junctions.
Abstract: In a short-channel Insulated Gate Field Effect Transistor (IGFET), a significant fraction of the electric field lines associated with the depleted region under the gate are terminated on the source and drain junctions. In this situation the two-dimensional sharing of the depleted substrate charge between the source, drain and gate terminals, has a dramatic effect on the device behaviour. A model is presented to describe the above-threshold characteristics of short-channel IGFETS when they are affected by the proximity of the source and drain junctions. The analytical forms allow a continuous description of the drain current from subthreshold to above threshold conduction. The model takes into account the fact that the device may be turned on by the drain voltage rather than by the gate voltage; in addition, it describes naturally the enhanced drain conductance commonly encountered in short-channel devices. The description includes both the linear and saturation regions over the complete range of drain and substrate voltages and for gate voltages below the value where channel-drain junction interactions become important or velocity saturation sets in. The model therefore provides an analytical description for a short-channel IGFET in the voltage regime where high-field effects in the channel do not significantly effect the current flow. The results indicate that the dominant effects for this region of operation in a short-channel device may be represented by the use of a drain-voltage and geometry-dependent threshold voltage. In the saturation region, the effects of the threshold variations are reflected in the parameter VSAT, the saturation voltage. The principle features of the model are verified by a detailed comparison with short-channel devices.

55 citations

Journal ArticleDOI
01 Jan 2007-EPL
TL;DR: In this paper, a spatially extended Rulkov map neuron with noise was modeled as a two-dimensional Rulerov map and the temporal order and synchronization was investigated in the presence of a sub-threshold stimulus with the frequency very close to the natural frequency of the map neuron.
Abstract: Temporal order and synchronization characterized by the rate of firing and its characteristic correlation time are studied in a spatially extended network system, which is locally modelled by a two-dimensional Rulkov map neuron with noise. For intermediate noise levels, noise-induced ordered patterns emerge spatially, which propagate through the neurons in the form of beautiful circular waves. Moreover, noise-induced temporal order and synchronization in this system can be greatly enhanced in the presence of a subthreshold stimulus with the frequency very close to the natural frequency of the map neuron. This shows that random perturbations and subthreshold stimuli play an important role in temporal order and synchronization. There exists an optimal noise level, where the temporal order and synchronization are maximum. However, it is observed that at the same time the spatial circular patterns are destroyed in the course of the enhancement of temporal order and synchronization.

55 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023153
2022349
2021172
2020196
2019242
2018272