scispace - formally typeset
Search or ask a question
Topic

Subthreshold conduction

About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.


Papers
More filters
Journal ArticleDOI
TL;DR: In this paper, the fabrication of fully transparent and flexible nanowire transistors by combining a high-quality In2O3:Zn channel, a SiNx high-κ dielectric, and conducting Sn-doped In 2O3 electrodes on a polyethylene terephthalate substrate was reported.
Abstract: We report the fabrication of fully transparent and flexible nanowire transistors by combining a high-quality In2O3:Zn nanowire channel, a SiNx high-κ dielectric, and conducting Sn-doped In2O3 electrodes on a polyethylene terephthalate substrate. The devices show excellent operating characteristics with high carrier mobilities up to 631 cm2 V−1 s−1, a drain-source current on/off modulation ratio ∼1×106, a high on-state current ∼1×10−5 A, a small subthreshold gate voltage swing of 120 mV decade−1, and a near zero threshold voltage. The devices further show high reproducibility and stable performance under bending condition. The high-performance nanowire transistors would enable application opportunities in flexible and transparent electronics.

50 citations

Proceedings ArticleDOI
02 Mar 2017
TL;DR: Owing to the need for low power consumption, portable and wearable electronics operate at low voltages, typically below 1V, with recent designs in near- and subthreshold operation resulting in voltages down to 0.5V, motivating theneed for compact power converters capable of large conversion ratio with wide and efficient voltage regulation.
Abstract: Owing to the need for low power consumption, portable and wearable electronics operate at low voltages, typically below 1V, with recent designs in near- and subthreshold operation resulting in voltages down to 0.3 to 0.5V. Meanwhile, voltage range of the most common energy source - the Li-ion battery - is 3 to 4.2V, motivating the need for compact power converters capable of large conversion ratio with wide and efficient voltage regulation.

50 citations

Journal ArticleDOI
TL;DR: Analysis of the transmembrane voltage response of an unmyelinated fiber to a stimulating electric field from a point current source finds that the subthreshold response is a good predictor of the wave shape of the suprathreshold vm, but a poor predictor of its magnitude.
Abstract: The authors consider the determination of conditions when an excitable membrane can be considered linear and steady-state. The following topics are dealt with: threshold for a space-clamped fiber; threshold for a fiber stimulated by a point current source; subthreshold response; passive vs. active response; defibrillation stimulus-response time-constant; the transient intracellular current; the transient transmembrane potential due to junctional resistance.

50 citations

Proceedings ArticleDOI
04 Oct 2006
TL;DR: This work explores energy optimality in the subthreshold regime, discusses variability in this region, and highlights the energy and variability characteristics of a real subth threshold design.
Abstract: Recent progress in the development of subthreshold circuit design techniques has created the opportunity for dramatic energy reductions in many applications However, energy efficiency comes at the price of timing and energy variability due to process variations We explore energy optimality in the subthreshold regime, discuss variability in this region, and highlight the energy and variability characteristics of a real subthreshold design

50 citations

Journal ArticleDOI
TL;DR: In this paper, a silicon on insulator (SOI) for VLSI applications is presented, where the insulator is a buried silicon nitride formed by nitrogen implantation and annealing.
Abstract: A CMOS technology in silicon on insulator (SOI) for VLSI applications is presented. The insulator is a buried silicon nitride formed by nitrogen implantation and annealing. The CMOS devices are fabricated in the superficial monocrystalline silicon layer without an epitaxial process, 1-µm PMOS and 2-µm NMOS transistors have been realized, which have been used to built inverters, ring Oscillators, and other circuits. With 40-nm gate oxide the transistors withstand gate and drain voltages of 10 V. Mobilities, subthreshold behavior, and leakage currents are nearly the same as in bulk-CMOS devices. Ring-oscillator measurements yield inverter delay times of 230 ps and power delay products of 14 fJ.

50 citations


Network Information
Related Topics (5)
CMOS
81.3K papers, 1.1M citations
78% related
Transistor
138K papers, 1.4M citations
77% related
Integrated circuit
82.7K papers, 1M citations
75% related
Amplifier
163.9K papers, 1.3M citations
74% related
Field-effect transistor
56.7K papers, 1M citations
73% related
Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023153
2022349
2021172
2020196
2019242
2018272