Topic
Subthreshold conduction
About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.
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TL;DR: The subthreshold fission cross section of 240Pu was measured relative to the 10B(n,α) or the 6Li(n-α) cross sections from 20 eV to 100 keV.
Abstract: The subthreshold fission cross section of 240Pu was measured relative to the 10B(n,α) or the 6Li(n,α) cross sections from 20 eV to 100 keV. Resonance parameter fits to the data were derived from 20...
37 citations
TL;DR: In this article, the authors present a gate insulator with high performance and low leakage and hysteresis, with an inverse sub-threshold slope of approximately 200 mV dec −1, threshold of the order of −2 V and >10 5 on/off ratio.
Abstract: We present here our latest results on high quality gate insulators for organic electronics. Ultra-thin films of n-octadecyltrichlorosilane-treated, anodized aluminium (Al) grown onto flexible, Al-sputtered polyester substrates combine low cost and manufacture under ambient conditions with excellent performance characteristics (negligible leakage and hysteresis, 400 nF cm −2 capacitance). With pentacene as organic semiconductor, we present organic transistors with inverse subthreshold slope of approximately 200 mV dec −1 , threshold of the order of −2 V and >10 5 on/off ratio. The subthreshold behaviour is significantly better than for transistors with pentacene deposited onto a gate insulator optimized for high mobility. Above the threshold, the higher capacitance compensates for the somewhat lower mobility. Crucially, the cheap, sputtered Al-on-polyester films resulted in transistors that were as good as transistors fabricated on the same substrate with evaporated Al. (Some figures in this article are in colour only in the electronic version)
37 citations
TL;DR: In this paper, an n-channel MOS process has been optimized to yield desirable characteristics for submicrometer channel-length, MOSFET's, and a self-aligned silicidation technology has been developed to reduce the increased resistance of diffused layers with down-scaled junction depths.
Abstract: An n-channel MOS process has been optimized to yield desirable characteristics for submicrometer channel-length, MOSFET's. Process/device simulation is extensively used to find an optimized processing sequence compatible with typical production-line processes. The simulation results show an excellent agreement with experimental data. We have obtained long-channel subthreshold characteristics, saturation drain characteristics up to 5 V, and a minimized substrate bias sensitivity for transistors with channel lengths as small as 0.5 µm. The short-channel effects have been also minimized. A new self-aligned silicidation technology has been developed to reduce the increased resistance of diffused layers with down-scaled junction depths.
37 citations
01 Jun 1991
TL;DR: In this article, a physically-based technique for measuring the threshold voltage of small geometry MOSFETs is presented, called the quasi-constant current (QCC) method, which is based on the drain current equation in the sub-threshold region.
Abstract: A physically-based technique for measuring the threshold voltage of small geometry MOSFETs is presented. The new method, called the quasi-constant current (QCC) method, is based on the drain current equation in the subthreshold region. It defines the threshold voltage as the gate voltage required for surface band-bending of 2ϕF. Compared with some other commonly used methods, this technique has the advantages of better fitting accuracy in the subthreshold region, of extracting the threshold voltage, VTH, with a unique value based on a physical definition of the surface band-bending, and of being suitable for MOS devices over a wide range of voltage biases, device dimensions, and temperatures.
37 citations
TL;DR: The proposed mechanisms of action, safety, efficacy, recommended laser treatment parameters, and clinical applications for which the use of subthreshold diode micropulse laser has been studied will be reviewed.
Abstract: The subthreshold diode micropulse laser is a form of non-damaging thermal laser therapy which has shown efficacy in multiple retinal conditions. The purpose of this article is to review the use of subthreshold diode micropulse laser as an emerging treatment modality for the treatment of retinal disease. The proposed mechanisms of action, safety, efficacy, recommended laser treatment parameters, and clinical applications for which the use of subthreshold diode micropulse laser has been studied will be reviewed.
37 citations