Topic
Subthreshold conduction
About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.
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TL;DR: In this article, the role of channel length scaling on IGZO TFT technology benchmark parameters, which are fabricated at temperatures not exceeding $180\, ^{\circ}$ C. The results obtained here, together with their interpretation based on device physics, provide crucial information for accurate IC design.
Abstract: This paper presents a study concerning the role of channel length scaling on IGZO TFT technology benchmark parameters, which are fabricated at temperatures not exceeding $180\, ^{\circ}$ C. The parameters under investigation are unity current-gain cutoff frequency, intrinsic voltage-gain, and on-resistance of the bottom-gate IGZO TFTs. As the channel length varies from 160 to 3 $\mu$ m, the measured cutoff frequency increases from 163 ${\rm kHz}$ to 111.5 ${\rm MHz}$ , which is a superior value compared to the other competing low-temperature thin-film technologies, such as organic TFTs. On the other hand, for the same transistor dimensions, the measured intrinsic voltage-gain is changing from 165 to 5.3 and the on-resistance is decreasing from 1135.6 to 26.1 k $\Omega$ . TFTs with smaller channel length (3 $\mu$ m) have shown a highly negative turn-on voltage and hump in the subthreshold region, which can be attributed to short channel effects. The results obtained here, together with their interpretation based on device physics, provide crucial information for accurate IC design, enabling an adequate selection of device dimensions to maximize the performance of different circuit building blocks assuring the multifunctionality demanded by system-on-panel concepts.
34 citations
23 Feb 1997
TL;DR: In this article, a new empirical large signal drain current source model, which is single-piece and continuously differentiable, has been developed for silicon LDMOS transistors and is capable of accurately representing the current-voltage characteristics and their derivatives.
Abstract: A new empirical large signal drain current source model, that is single-piece and continuously differentiable, has been developed for silicon LDMOS transistors. The new model is capable of accurately representing the current-voltage characteristics and their derivatives. A single continuously differentiable form models the subthreshold, triode, and saturation regions of operation. The model was implemented in a commercial harmonic balance simulator and parameter extraction software. Measured and simulated load-pull results at a class AB operating point are compared and show very good agreement.
34 citations
TL;DR: In this article, the bias-dependence of the inverse subthreshold slope or sub-reshold swing in MOSFET's was investigated and it was shown by calculations and verified by experiments that the sub-threshold swing varies with gate bias and exhibits a global minimum.
Abstract: This letter reports on the bias-dependence of the inverse subthreshold slope or subthreshold swing in MOSFET's. It is shown by calculations and verified by experiments that the subthreshold swing varies with gate bias and exhibits a global minimum. The gate-source voltage for which minimum subthreshold swing is reached, is linearly related to the voltage at which moderate inversion starts. Influence of oxide thickness and temperature is investigated. The subthreshold swing is an important parameter in modeling the weak inversion regime, especially for high-gain analog applications, imaging circuits, and low-voltage applications. Based on calculations of the subthreshold swing, we propose a new model for the diffusion component of the drain leakage current in MOSFET's. The model accurately predicts the temperature dependence of the drain leakage current.
34 citations
TL;DR: In this article, a technique that transforms regional compact (algebraic) MOSFET models into single-piece C/sub infinity /-continuous models is introduced.
Abstract: A simple yet powerful technique that transforms regional compact (algebraic) MOSFET models into single-piece C/sub infinity /-continuous models is introduced. The technique significantly improves MOSFET models by removing kinks and glitches at the boundaries between the subthreshold, triode, and saturation regions of operation. In addition, the technique adds subthreshold conduction modeling to models that lack such a capability. The authors show the technique by extending a simple MOSFET model, which is three piece and does not model subthreshold conduction, to become a single-piece model that includes subthreshold conduction. >
34 citations
TL;DR: In this article, the statistical distribution of the random telegraph noise (RTN) amplitude in nanoscale MOS devices was investigated, focusing on the change of its main features when moving from the sub-threshold to the on-state conduction regime.
Abstract: This letter presents a numerical investigation of the statistical distribution of the random telegraph noise (RTN) amplitude in nanoscale MOS devices, focusing on the change of its main features when moving from the subthreshold to the on-state conduction regime. Results show that while the distribution can be well approximated by an exponential behavior in subthreshold, large deviations from this behavior appear when moving toward the on-state regime, despite a low probability exponential tail at high RTN amplitudes being preserved. The average value of the distribution is shown to keep an inverse proportionality to channel area, while the slope of the high-amplitude exponential tail changes its dependence on device width, length, and doping when moving from subthreshold to on-state.
34 citations