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Subthreshold conduction

About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.


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Patent
16 May 2014
TL;DR: In this article, a nonvolatile memory array with a select transistor and a charge storage element is considered, and if the threshold voltage deviates from a desired threshold voltage range, the charge is added to, or removed from, the transistor.
Abstract: In a nonvolatile memory array in which a select transistor includes a charge storage element, the threshold voltage of the select transistor is monitored, and if the threshold voltage deviates from a desired threshold voltage range, charge is added to, or removed from the charge storage element to return the threshold voltage to the desired threshold voltage range.

34 citations

Journal ArticleDOI
TL;DR: In this article, an analytic current-voltage model for submicrometer fully depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented.
Abstract: In this paper, an analytic current-voltage model in the subthreshold regime for submicrometer fully depleted (FD) silicon-on-insulator (SOI) MOSFET's is presented. This model takes into account the dependence of the effective depleted charge on the drain bias and the voltage drop in the substrate region underneath the buried oxide. In addition to predicting accurate subthreshold current-voltage characteristics and subthreshold slope, this model can be used to predict important Short Channel Effects (SCE) such as the threshold voltage roll-off and Drain-Induced Barrier Lowering (DIBL). This model is verified by comparison to a two-dimensional device simulator, MEDICI. Good agreement is obtained for SOI channel lengths down to 0.25 /spl mu/m. >

34 citations

Journal ArticleDOI
TL;DR: In this paper, an analog functional block-voltage reference generator was designed with an AlGaN/GaN HEMT and Schottky diodes, and the devices were operated in the sub-threshold regime to obtain low power consumption.
Abstract: GaN smart power chip technology has been realized using a GaN-on-Si HEMT platform, featuring monolithically integrated high-voltage power devices and low-voltage peripheral devices for mixed-signal functional blocks. In particular, this brief presents the imperative analog functional block-voltage reference generator for smart power applications with wide-temperature-range stability. The circuit is capable of proper functions within a wide temperature range from room temperature up to 250°C , illustrating the unique advantage of the wide-bandgap GaN in high-temperature operation. The voltage reference generator was designed with an AlGaN/GaN HEMT and Schottky diodes, and the devices were operated in the subthreshold regime to obtain low power consumption. The voltage reference generator achieved an average drift of less than 0.5 mV/°C and can be used as a reference voltage in various biasing and sensing circuits.

34 citations

Journal ArticleDOI
TL;DR: In this article, a semi-classical and a semiquantum current transport model for p-i-n n-type armchair graphene nanoribbon tunnel field effect transistor (TFET) is studied analytically.
Abstract: A semi-classical and a semi-quantum current transport model for p-i-n n-type armchair graphene nanoribbon tunnel field effect transistor (TFET) are studied analytically. The results are compared with the numerical quantum transport simulation method using an atomistic Schrodinger–Poisson solver within the non-equilibrium Green function (NEGF) formalism. The channel length and width are 20 and 4.9 nm and a-GNR band gap is 0.289 eV. Current ratio ${\rm I_{ON}}/{\rm I_{OFF}}$ at 0.1 V supply voltage is calculated as follows: 122, 16.3 and 116 with a subthreshold slopes 26, 69 and 27.4 mV/decade from semi-classical, semi-quantum and NEGF simulation, respectively. Performance of a-GNR TFET is also studied analytically and numerically considering a-GNR width variation. Voltage transfer characteristics of a-GNR TFET inverter are computed for 0.1 V and 0.2 supply voltages using three current transport models which are in close agreement.

34 citations

Patent
03 Feb 2006
TL;DR: In this paper, a system and method for enabling a device to function at a sub-threshold voltage level of the device is provided, where the system contains a subthreshold data memory capable of functioning when a supply voltage is within the sub- threshold voltage level.
Abstract: A system and method for enabling a device to function at a subthreshold voltage level of the device is provided. Generally, the system contains a subthreshold data memory capable of functioning when a supply voltage is within the subthreshold voltage level of the device. The system also contains control logic and a read only memory capable of functioning when the supply voltage is within the subthreshold voltage level of the device.

34 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023153
2022349
2021172
2020196
2019242
2018272