Topic
Subthreshold conduction
About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.
Papers published on a yearly basis
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TL;DR: In this article, a two-dimensional analytical model for a dual material gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs).
34 citations
IBM1
TL;DR: In this paper, a probabilistic technique is presented to compute the average leakage of combinational circuits with an average error of only 2% for the ISCAS benchmarks and accurately predict both subthreshold and gate leakage as well as the leakage sensitivities to process and environmental parameters.
Abstract: Leakage power is emerging as a new critical challenge in the design of high performance integrated circuits. Leakage is increasing dramatically with each technology generation and is expected to dominate system power. This paper describes a static (i.e input independent) technique for efficient and accurate leakage estimation. A probabilistic technique is presented to compute the average leakage of combinational circuits. The proposed technique gives accurate results with an average error of only 2% for the ISCAS benchmarks and accurately predict both subthreshold and gate leakage as well as the leakage sensitivities to process and environmental parameters.
34 citations
TL;DR: In this article, the performance limits of terahertz detectors based on field effect transistors (FETs) in the regime of broadband detection were derived for short-channel FETs in the subthreshold regime.
Abstract: We present estimates of the performance limits of terahertz detectors based on the field effect transistors (FET) in the regime of broadband detection. The maximal responsivity is predicted for short-channel FETs in the subthreshold regime. We also calculate the conversion efficiency Q of the device defined as the ratio of the power dissipated by radiation-induced dc current to the THz dissipated power. We show that Q has an absolute maximum as a function of two variables: the power and the frequency of the incoming radiation. The maximal value of Q is on the order of 10%
34 citations
34 citations
01 Dec 2010
TL;DR: In this article, a super-steep sub-threshold slope (SS) was achieved with ultra-thin BOX (UTBOX) FDSOI standard CMOS transistors.
Abstract: We report the first demonstration of a super-steep subthreshold slope (SS) (the smallest ever reported experimentally) with ultra-thin BOX (UTBOX) FDSOI standard CMOS transistors. Record steep SS of 72µV/dec for L g =25nm and 58µV/dec for L g =55nm at room temperature are achieved with low voltages. The device also exhibits high ON-state current (∼100µA/µm), as compared to other devices from this class. As a result, I ON /I OFF ratio of 108 is realized with 0.5V gate swing for L g =55nm MOSFETs. The excellent reliability is also demonstrated.
33 citations