Subthreshold conduction

About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.

Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime

Abstract: In this paper, we propose an approximate solution to solve the two dimensional potential distribution in ultra-thin body junctionless double gate MOSFET (JL DG MOSFET) operating in the subthreshold regime. Basically, we solved the 2D-Poisson equation along the channel, while assuming a parabolic potential across the silicon thickness, which in turn leads to some explicit relationships of the subthreshold current, subthreshold slope (SS) and drain induced barrier lowering (DIBL). This approach has been assessed with Technology Computer Aided Design (TCAD) simulations, confirming that this represents an interesting solution for further implementation in generic JL DG MOSFETs compact models.

Subthreshold slope in thin-film SOI MOSFETs

Abstract: The subthreshold conduction regime in thick- and thin-film SOI MOSFETs is studied. Using the depletion approximation, a one-dimensional analytical expression for the subthreshold slope is derived, and equivalence with a simple capacitive network is proven. The model accounts for the influence of the back interface properties on the subthreshold swing in the thin-film regime. The coupling between front and back surface potential and the influence of the backside conduction on the front interface characteristics are accounted for. The case of double gate control is studied in more detail. Experimental verification of the model with measured subthreshold slopes in thin-form MOSFET devices is given. >

Two-dimensional simulation and measurement of high-performance MOSFETs made on a very thin SOI film

Abstract: Thinning effects on the device characteristics of silicon-on-insulator (SOI) MOSFETs are discussed. Two-dimensional/two-carrier device simulation revealed the following advantages. An n-channel MOSFET with 500-AA-SOI thickness exhibited a high-punchthrough resistance as well as an improved subthreshold swing down to a deep submicrometer region, even if the film was nearly intrinsic. A capacitance coupling model has been proposed to explain these subthreshold characteristics. The kink elimination effect, which was attributed to a significantly reduced hole density in the SOI film, was reproduced. The low-field channel mobility exhibited a significant increase, which was ascribed to a decrease in the vertical electric field. Moreover, the current-overshoot phenomenon associated with the switching operation was suppressed. Excess holes recombine with electrons quickly after the gate turn-on, bringing about a stabilized potential in the SOI substrate. Experiments were also carried out to verify the simulation. >

Potassium currents during the action potential of hippocampal CA3 neurons.

Abstract: Central neurons have multiple types of voltage-dependent potassium channels, whose activation during action potentials shapes spike width and whose activation and inactivation at subthreshold voltages modulate firing frequency. We characterized the voltage-dependent potassium currents flowing during the action potentials of hippocampal CA3 pyramidal neurons and examined the susceptibility of the underlying channel types to inactivation at subthreshold voltages. Using acutely dissociated neurons that permitted rapid voltage clamp, action potentials recorded previously were used as the command voltage waveform, and individual components of potassium current were identified by pharmacological sensitivity. The overall voltage-dependent potassium current in the neurons could be split into three major components based on pharmacology and kinetics during step voltage pulses: I(D) (fast activating, slowly inactivating, and sensitive to 4-aminopyridine at 30 microm), I(A) (fast activating, fast inactivating, and sensitive to 4-aminopyridine at 3 mm), and I(K) (slowly activating, noninactivating, and sensitive to external TEA at 3-25 mm). The potassium current during the action potential was composed of approximately equal contributions of I(D) and I(A), with a negligible contribution of I(K). I(D) and I(A) had nearly identical trajectories of activation and deactivation during the action potential. Both I(A) and I(D) showed steady-state inactivation at subthreshold voltages, but maximal inactivation at such voltages was incomplete for both currents. Because of the major contribution of both I(D) and I(A) to spike repolarization, it is likely that modulation or partial inactivation at subthreshold voltages of either current can influence spike timing with minimal effect on spike width.

Using electrical noise to enhance the ability of humans to detect subthreshold mechanical cutaneous stimuli

Abstract: Stochastic resonance (SR) is a phenomenon wherein the response of a nonlinear system to a weak input signal is optimized by the presence of a particular, nonzero level of noise. Our objective was to demonstrate cross-modality SR in human sensory perception. Specifically, we were interested in testing the hypothesis that the ability of an individual to detect a subthreshold mechanical cutaneous stimulus can be significantly enhanced by introducing a particular level of electrical noise. Psychophysical experiments were performed on 11 healthy subjects. The protocol consisted of the presentation of: (a) a subthreshold mechanical stimulus plus electrical noise, or (b) no mechanical stimulus plus electrical noise. The intensity of the electrical noise was varied between trials. Each subject’s ability to identify correctly the presence of the mechanical stimulus was determined as a function of the noise intensity. In 9 of the 11 subjects, the introduction of a particular level of electrical noise significantly enhanced the subject’s ability to detect the subthreshold mechanical cutaneous stimulus. In 2 of the 11 subjects, the introduction of electrical noise did not significantly change the subject’s ability to detect the mechanical stimulus. These findings indicate that input electrical noise can serve as a negative masker for subthreshold mechanical tactile stimuli, i.e., electrical noise can increase the detectability of weak mechanical signals. Thus, for SR-type effects to be observed in human sensory perception, the noise and stimulus need not be of the same modality. From a bioengineering and clinical standpoint, this work suggests that an electrical noise-based technique could be used to improve tactile sensation in humans when the mechanical stimulus is around or below threshold.