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Subthreshold conduction

About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.


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Journal ArticleDOI
TL;DR: In this paper, GaN-based high-electron mobility transistors with planar multiple grating field plates (MGFPs) for high-voltage operation are described and a synergy effect with additional electron channel confinement by using a heterojunction AlGaN back barrier (BB) is demonstrated.
Abstract: GaN-based high-electron mobility transistors with planar multiple grating field plates (MGFPs) for high-voltage operation are described. A synergy effect with additional electron channel confinement by using a heterojunction AlGaN back barrier (BB) is demonstrated. Suppression of the OFF-state subthreshold gate and drain leakage currents enables breakdown voltage enhancement over 700 V and a low ON-state resistance of 0.68 mΩ × cm2. Such devices have a minor tradeoff in ON-state resistance, lag factor, maximum oscillation frequency, and cutoff frequency. A systematic study of the MGFP design and the effect of Al composition in the BB is described. Physics-based device simulation results give insight into electric field distribution and charge carrier concentration, depending on the field plate design.

123 citations

Journal ArticleDOI
TL;DR: This brief presents a fast energy-efficient level converter capable of converting an input signal from subthreshold voltages up to the nominal supply voltage with robust results from a 130-nm test chip.
Abstract: This brief presents a fast energy-efficient level converter capable of converting an input signal from subthreshold voltages up to the nominal supply voltage. Measured results from a 130-nm test chip show robust conversion from 188 mV to 1.2 V with no intermediate supplies required. A combination of circuit methods makes the converter robust to the large variations in the current characteristics of subthreshold circuits. To support dynamic voltage scaling, the level converter can upconvert an input at any voltage within this range to 1.2 V.

123 citations

Proceedings ArticleDOI
02 Jun 2003
TL;DR: A methodology for accurate estimation of the total leakage in a logic circuit based on the compact modeling of the different leakage current in scaled devices has been developed and the impact of quantum mechanical behavior of substrate electrons, on the circuit leakage has been analyzed.
Abstract: Dramatic increase of subthreshold, gate and reverse biased junction band-to-band tunneling (BTBT) leakage in scaled devices, results in the drastic increase of total leakage power in a logic circuit. In this paper a methodology for accurate estimation of the total leakage in a logic circuit based on the compact modeling of the different leakage current in scaled devices has been developed. Current models have been developed based on the exact device geometry, 2-D doping profile and operating temperature. A circuit level model of junction BTBT leakage (which is unprecedented) has been developed. Simple models of the subthreshold current and the gate current have been presented. Here, for the first time, the impact of quantum mechanical behavior of substrate electrons, on the circuit leakage has been analyzed. Using the compact current model, a transistor has been modeled as a sum of current sources (SCS). The SCS transistors model has been used to estimate the total leakage in simple logic gates and complex logic circuits (designed with transistors of 25nm effective length) at the room and at the elevated temperatures.

123 citations

Journal ArticleDOI
TL;DR: In this paper, an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor with a high-k dielectric layer on a glass substrate is presented.
Abstract: In this letter, we report the fabrication of an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor with a high-k dielectric layer on a glass substrate. The room-temperature-deposited a-IGZO channel with Ta2O5 exhibits the following operating characteristics: a threshold voltage of 0.25 V, a drain-source current on/off ratio of 105, a subthreshold gate voltage swing of 0.61 V/decade, and a high field-effect mobility of 61.5 cm2/V·s; these characteristics make it suitable for use as a switching transistor and in low-power applications.

122 citations

Journal ArticleDOI
TL;DR: A minimal resonate-and-fire type model based on measured physiological parameters captures fundamental properties of neuronal firing statistics surprisingly well and helps to shed light on the mechanisms that shape spike patterns.
Abstract: Many neurons exhibit subthreshold membrane-potential resonances, such that the largest voltage responses occur at preferred stimulation frequencies. Because subthreshold resonances are known to inf...

122 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023153
2022349
2021172
2020196
2019242
2018272