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Subthreshold conduction

About: Subthreshold conduction is a research topic. Over the lifetime, 6343 publications have been published within this topic receiving 131957 citations. The topic is also known as: Subthreshold leakage.


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Proceedings ArticleDOI
26 Apr 2010
TL;DR: In this paper, the physical origin of the 60 mV/dec limit is revisited and the fact that this limit is in part determined by the density-of-states (DOS) of the source is highlighted.
Abstract: The 60 mV/dec limit for subthreshold swing at 300 K is generally considered a fundamental limit that cannot be defeated. The physical origin of this limit is revisited in this paper and the fact that this limit is in part determined by the density-of-states (DOS) of the source is highlighted. A scheme of engineering this DOS is proposed as a possible way to achieve subthreshold swing much lower than the 60 mV/dec value.

71 citations

Journal ArticleDOI
TL;DR: In this paper, a conformal mapping technique is used to analytically solve the two-dimensional Poisson equation, whereby inhomogeneous substrate doping is taken into account, for the geometry and voltage dependence of threshold voltage and for the subthreshold behavior of short-channel MOSFETs.
Abstract: In this paper we present a new theoretical approach in MOS modeling to derive analytical, physics-based model equations for the geometry and voltage dependence of threshold voltage and for the subthreshold behavior of short-channel MOSFETs. Our approach uses conformal mapping techniques to analytically solve the two-dimensional Poisson equation, whereby inhomogeneous substrate doping is taken into account. The presented model consists of analytical equations in closed form and uses only physically meaningful parameters. Therefore, the results are not only useful in circuit simulators but also in calculations of scaling behavior, where planned processes can be investigated. Comparison with numerical device simulation results and measurements confirm the high accuracy of the presented model.

71 citations

Journal ArticleDOI
TL;DR: In this article, the authors describe the fabrication, electrical and electrochemical characterization of silicon nanowire arrays, which were processed in a top-down approach using combined nanoimprint lithography and wet chemical etching.
Abstract: We describe the fabrication, electrical and electrochemical characterization of silicon nanowire arrays, which were processed in a top-down approach using combined nanoimprint lithography and wet chemical etching. We used the top silicon layer as contact line and observed an influence of implantation and subsequent annealing of these lines to the device performance. In addition we found a subthreshold slope dependence on wire size. When operated in a liquid environment, wires can be utilized as pH sensors. We characterized the pH sensitivity in the linear range and in the subthreshold operation regime. As a first proof-of-principle experiment for the later use of the sensors in bioassays, we monitored the buildup ofpolyelectrolyte multilayers on the wire surface.

71 citations

Journal ArticleDOI
TL;DR: By regulating the background noise and the synaptic weight, the information of subthreshold EPSC signal is transferred accurately through the feed-forward neural network, and both time lag and fidelity between the system’s response and subth threshold EPSC signals are promoted.
Abstract: Excitatory postsynaptic current (EPSC) is a biological signal of neurons; the propagation mechanism of subthreshold EPSC signal in neural network and the effects of background noise on the propagation of the subthreshold EPSC signal are still unclear. In this paper, considering a feed-forward neural network with five layers and an external subthreshold EPSC signal imposed on the Hodgkin–Huxley neurons of first layer, the propagation and fidelity of subthreshold EPSC signal in the feed-forward neural network are studied by using the spike timing precision and power norm. It is found that the background noise in each layer is beneficial for the propagation of subthreshold EPSC signal in feed-forward neural network; there exists an optimal background noise intensity at which the propagation speed of subthreshold EPSC signal can be enhanced, and the fidelity between system’s response and subthreshold EPSC signal is preserved. The transmission of subthreshold EPSC signal is shifted from failed propagation to succeed propagation with the increasing of synaptic weight. By regulating the background noise and the synaptic weight, the information of subthreshold EPSC signal is transferred accurately through the feed-forward neural network, both time lag and fidelity between the system’s response and subthreshold EPSC signal are promoted. These results might provide a possible underlying mechanism for enhancing the subthreshold EPSC signal propagation.

71 citations

01 Jan 2006
TL;DR: In this paper, the surface potential-based compact transistor model, MOS Model 20 (MM20), has been extended with a quasi-saturation, an effect that is typical for LDMOS devices with a long drift region.
Abstract: The surface-potential-based compact transistor model, MOS Model 20 (MM20), has been extended with a quasi-saturation, an effect that is typical for LDMOS devices with a long drift region As a result, MM20 extends its application range from low-voltage LDMOS devices up to high-voltage LDMOS devices of about 100V In this paper, the new dc model of MM20, including quasi-saturation, is presented The addition of velocity saturation in the drift region ensures the current to be controlled by either the channel region or the drift region A comparison with dc measurements on a 60-V LDMOS device shows that the new model provides an accurate description in all regimes of operation, ranging from subthreshold to superthreshold, in both the linear and saturation regime Thus, owing to the inclusion of quasi-saturation also the regime of high-gate and high-drain bias conditions for high-voltage LDMOS devices is accurately described

70 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023153
2022349
2021172
2020196
2019242
2018272