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Swift heavy ion
About: Swift heavy ion is a research topic. Over the lifetime, 1674 publications have been published within this topic receiving 32577 citations.
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TL;DR: A review of existing widely-cited tables of ion stopping and ranges can be found in this paper, where a brief exposition of what can be determined by modern calculations is given.
Abstract: The stopping and range of ions in matter is physically very complex, and there are few simple approximations which are accurate. However, if modern calculations are performed, the ion distributions can be calculated with good accuracy, typically better than 10%. This review will be in several sections:
a)
A brief exposition of what can be determined by modern calculations.
b)
A review of existing widely-cited tables of ion stopping and ranges.
c)
A review of the calculation of accurate ion stopping powers.
10,060 citations
TL;DR: In this paper, the effect of the electronic stopping power (Se) in metals irradiated by swift heavy ions was investigated in the framework of the thermal-spike model, and the effect on the lattice temperature induced by swift-heavy ion irradiation was calculated.
Abstract: In the framework of the thermal-spike model the present paper deals with the effect of the electronic stopping power (Se) in metals irradiated by swift heavy ions. Using the strength of the electron-phonon coupling g(z) with the number of valence electrons z as the unique free parameter, the increment of lattice temperature induced by swift-heavy-ion irradiation is calculated. Choosing z=2, the calculated threshold of defect creation by Se for Ti, Zr, Co and Fe is about 11, 27.5, 28 and 41 keV nm-1, in good agreement with experiment. Taking the same z value, the calculation shows that Al, Cu, Nb and Ag are Se insensitive. Moreover, in Fe, the differences in the damage created by U ions of different energies but exhibiting the same value of Se may be interpreted by a velocity effect. Using z=2, other calculations suggest that Be (Se>or=11 keV nm-1), Ga (Se>or=5 keV nm-1) and Ni (Se>or=49 keV nm-1) should be sensitive to Se but Mg should not. These examples put the stress on the effect of the physical parameters governing the electron-phonon coupling constant apart from z determination: the sound velocity linked to the Debye temperature and the lattice thermal conductivity. Furthermore, a simple criterion is proposed in order to predict the Se sensitivity of metals.
493 citations
TL;DR: The observation of a fine structure in ion tracks in amorphous SiO2 using small angle x-ray scattering measurements is reported, consistent with a frozen-in pressure wave originating from the center of the ion track as a result of a thermal spike.
Abstract: We report on the observation of a fine structure in ion tracks in amorphous SiO2 using small angle x-ray scattering measurements. Tracks were generated by high energy ion irradiation with Au and Xe between 27 MeV and 1.43 GeV. In agreement with molecular dynamics simulations, the tracks consist of a core characterized by a significant density deficit compared to unirradiated material, surrounded by a high density shell. The structure is consistent with a frozen-in pressure wave originating from the center of the ion track as a result of a thermal spike.
247 citations
TL;DR: In this article, the influence of near-surface denuded zones and implanted ion effects is analyzed, including diffusional broadening effects, at high ion irradiation energies, which can lead to enhanced defect production or recovery.
225 citations
TL;DR: This analysis addresses a number of experimental results, such as track morphology, the efficiency of track registration and the ratios of the threshold stopping power of various materials, which address the systematic differences in behaviour of Swift heavy ions.
Abstract: Swift heavy ions cause material modification along their tracks, changes primarily due to their very dense electronic excitation. The available data for threshold stopping powers indicate two main classes of materials. Group I, with threshold stopping powers above about 10 keV nm −1 , includes some metals, crystalline semiconductors and a few insulators. Group II, with lower thresholds, comprises many insulators, amorphous materials and high Tc oxide superconductors. We show that the systematic differences in behaviour result from different coupling of the dense excited electrons, holes and excitons to atomic (ionic) motions, and the consequent lattice relaxation. The coupling strength of excitons and charge carriers with the lattice is crucial. For group II, the mechanism appears to be the self-trapped exciton model of Itoh and Stoneham (1998 Nucl. Instrum. Methods Phys. Res. B 146 362): the local structural changes occur roughly when the exciton concentration exceeds the number of lattice sites. In materials of group I, excitons are not self-trapped and structural change requires excitation of a substantial fraction of bonding electrons, which induces spontaneous lattice expansion within a few hundred femtoseconds, as recently observed by laser-induced time-resolved x-ray diffraction of semiconductors. Our analysis addresses a number of experimental results, such as track morphology, the efficiency of track registration and the ratios of the threshold stopping power of various materials. (Some figures in this article are in colour only in the electronic version) This paper celebrates the contribution made by Dr Richard Palmer to IOP Publishing, and especially to Journal of Physics: Condensed Matter.
198 citations