About: Switching time is a(n) research topic. Over the lifetime, 7222 publication(s) have been published within this topic receiving 87596 citation(s).
04 Jun 2007-Advanced Materials
Abstract: Many organic electronic devices exhibit switching behavior, and have therefore been proposed as the basis for a nonvolatile memory (NVM) technology. This Review summarizes the materials that have been used in switching devices, and describes the variety of device behavior observed in their charge-voltage (capacitive) or current-voltage (resistive) response. A critical summary of the proposed charge-transport mechanisms for resistive switching is given, focusing particularly on the role of filamentary conduction and of deliberately introduced or accidental nanoparticles. The reported device parameters (on-off ratio, on-state current, switching time, retention time, cycling endurance, and rectification) are compared with those that would be necessary for a viable memory technology.
01 Feb 1975-Applied Physics Letters
Abstract: Quasimetallic photoconductivity produced by the absorption of picosecond optical pulses in silicon transmission line structures has been used to devise electronic switches and gates which can be turned on and off in a few picoseconds. Electrical signals as large as 100 V can be switched by a few microjoules of optical energy. The switching speed was measured by correlating the response of two transmission gates in tandem, each having an aperture time of 15 psec.
01 Jul 1993-IEEE Photonics Technology Letters
Abstract: A device capable of demultiplexing Tb/s pulse trains that requires less than 1 pJ of switching energy and can be integrated on a chip is presented. The device consists of an optical nonlinear element asymmetrically placed in a short fiber loop. Its switching time is determined by the off-center position of the nonlinear element within the loop, and therefore it can use the strong, slow optical nonlinearities found in semiconductors, which all other fast demultiplexers seek to avoid. The switch's operation at 50 Gb/s is demonstrated, using 600-fJ control pulses. >
10 Jan 2011-Applied Physics Letters
Abstract: Spin torque switching is investigated in perpendicular magnetic tunnel junctions using Ta∣CoFeB∣MgO free layers and a synthetic antiferromagnet reference layer. We show that the Ta∣CoFeB interface makes a key contribution to the perpendicular anisotropy. The quasistatic phase diagram for switching under applied field and voltage is reported. Low switching voltages, Vc 50 ns=290 mV are obtained, in the range required for spin torque magnetic random access memory. Switching down to 1 ns is reported, with a rise in switching speed from increased overdrive that is eight times greater than for comparable in-plane devices, consistent with expectations from a single-domain model.
01 Dec 2008-
Abstract: A novel HfO2-based resistive memory with the TiN electrodes is proposed and fully integrated with 0.18 mum CMOS technology. By using a thin Ti layer as the reactive buffer layer into the anodic side of capacitor-like memory cell, excellent memory performances, such as low operation current (down to 25 muA), high on/off resistance ratio (above 1,000), fast switching speed (5 ns), satisfactory switching endurance (>106 cycles), and reliable data retention (10 years extrapolation at 200degC) have been demonstrated in our memory device. Moreover, the benefits of high yield, robust memory performance at high temperature (200degC), excellent scalability, and multi-level operation promise its application in the next generation nonvolatile memory.