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Switching time

About: Switching time is a research topic. Over the lifetime, 7222 publications have been published within this topic receiving 87596 citations.


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TL;DR: In this paper, the pull-in instability in microelectromechanical (MEMS) resonators was studied and the authors proposed a low-voltage MEMS RF switch actuated with a combined DC and AC loading, which uses a voltage much lower than the traditionally used DC voltage.
Abstract: We study the pull-in instability in microelectromechanical (MEMS) resonators and find that characteristics of the pull-in phenomenon in the presence of AC loads differ from those under purely DC loads. We analyze this phenomenon, dubbed dynamic pull-in, and formulate safety criteria for the design of MEMS resonant sensors and filters excited near one of their natural frequencies. We also utilize this phenomenon to design a low-voltage MEMS RF switch actuated with a combined DC and AC loading. The new switch uses a voltage much lower than the traditionally used DC voltage. Either the frequency or the amplitude of the AC loading can be adjusted to reduce the driving voltage and switching time. The new actuation method has the potential of solving the problem of high driving voltages of RF MEMS switches.

421 citations

Journal ArticleDOI
TL;DR: In this article, a theoretical model of fatigue in ferroelectric thin-film memories based upon impact ionization (e.g., Ti+4 to Ti+3 conversion in PbZr1−xTixO3), resulting in dendritic growth of oxygen-deficient filaments, is presented.
Abstract: A theoretical model of fatigue in ferroelectric thin‐film memories based upon impact ionization (e.g., Ti+4 to Ti+3 conversion in PbZr1−xTixO3), resulting in dendritic growth of oxygen‐deficient filaments, is presented. The predictions of spontaneous polarization versus switching cycles Ps(N) are compared with both Monte Carlo simulations for a two‐dimensional Ising model and with experimental data on small‐grain (40 nm) sol‐gel PZT films. Excellent agreement between theory and experiment is obtained. In addition to modeling the Ps(N) curves, the theory developed explains the observed linear proportionality between switching time ts(N) and polarization Ps(N) during fatigue; other models of aging do not account for this. Earlier theories of switching are also extended to include finite grain sizes, surface nucleation, triangular drive pulses, and dipolar forces. Good agreement with sol‐gel PZT switching data is obtained.

410 citations

Journal ArticleDOI
TL;DR: In this article, the authors measured coercive field and switching voltage versus thickness in PbZr0.54Ti0.46O3 thin (0.15-0.50 μm) films, together with switching times and current transient shapes versus field and temperature.
Abstract: We have measured coercive field and switching voltage versus thickness in PbZr0.54Ti0.46O3 thin (0.15–0.50 μm) films, together with switching times and current transient shapes versus field and temperature. The results show activation fields of order 120 kV/cm at room temperature, threshold voltages below 1.3 V, and switching speeds faster than 100 ns, demonstrating that fast, nonvolatile memories can be constructed that are compatible with standard silicon or GaAs integrated circuit voltage levels, without the need for an internal voltage pump. The displacement current transient data yield 2.5 as the dimensionality of domain growth if one‐step intial nucleation rate is assumed, and are compatible with the theory of Ishibashi, yielding imaxtmax/Ps=1.65±0.23, in comparison with the predicted 1.646. The switching time exhibits an activation field dependence upon both voltage and temperature through a single reduced parameter (TC−T)(VTC),−1 in accord with the theory of Orihara and Ishibashi.

407 citations

Journal ArticleDOI
TL;DR: In this article, the authors generalized the tunnel field effect transistor configuration by allowing a shorter gate structure, which is especially attractive for vertical nanowire-based transistors, and demonstrated with device simulations that the more flexible configuration allows of the reduction of ambipolar behavior, the increase of switching speed, and the decrease of processing complexity.
Abstract: Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect transistors because of the absence of short-channel effects and of a subthreshold-slope limit. However, the tunnel devices are ambipolar and, depending on device material properties, they may have low on-currents resulting in low switching speed. The authors have generalized the tunnel field-effect transistor configuration by allowing a shorter gate structure. The proposed device is especially attractive for vertical nanowire-based transistors. As illustrated with device simulations, the authors’ more flexible configuration allows of the reduction of ambipolar behavior, the increase of switching speed, and the decrease of processing complexity.

390 citations

Journal ArticleDOI
TL;DR: In this paper, a single 7.5μm-diameter microdisk laser coupled to a silicon-on-insulator wire waveguide can work as an all-optical flip-flop memory.
Abstract: Ultra-small, low-power, all-optical switching and memory elements, such as all-optical flip-flops, as well as photonic integrated circuits of many such elements, are in great demand for all-optical signal buffering, switching and processing. Silicon-on-insulator is considered to be a promising platform to accommodate such photonic circuits in large-scale configurations. Through heterogeneous integration of InP membranes onto silicon-on-insulator, a single microdisk laser with a diameter of 7.5 µm, coupled to a silicon-on-insulator wire waveguide, is demonstrated here as an all-optical flip-flop working in a continuous-wave regime with an electrical power consumption of a few milliwatts, allowing switching in 60 ps with 1.8 fJ optical energy. The total power consumption and the device size are, to the best of our knowledge, the smallest reported to date at telecom wavelengths. This is also the only electrically pumped, all-optical flip-flop on silicon built upon complementary metal-oxide semiconductor technology. Scientists demonstrate that a single 7.5-μm-diameter microdisk laser coupled to a silicon-on-insulator wire waveguide can work as an all-optical flip-flop memory. Under a continuous bias of 3.5 mA, flip-flop operation is demonstrated using optical triggering pulses of 1.8 fJ and with a switching time of 60 ps. This device is attractive for on-chip all-optical signal buffering, switching, and processing.

383 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202346
2022105
2021195
2020300
2019320
2018277