Switching time

About: Switching time is a research topic. Over the lifetime, 7222 publications have been published within this topic receiving 87596 citations.

Ultrafast all-optical switching by single photons

Abstract: An as yet outstanding goal in quantum optics is the realization of fast optical nonlinearities at the single-photon level This would allow for the implementation of optical devices with new functionalities such as single-photon switches/transistors1,2 or controlled-phase gates3 Although nonlinear optics effects at the single-emitter level have been demonstrated in a number of systems4,5,6,7,8,9,10,11,12,13, none of these experiments showed single-photon switching on ultrafast timescales Here, we perform pulsed two-colour spectroscopy and demonstrate that, in a strongly coupled quantum dot–cavity system, the presence of a single photon on one of the fundamental polariton transitions can turn on light scattering on a transition from the first to the second Jaynes–Cummings manifold The overall switching time of this single-photon all-optical switch14 is ∼50 ps In addition, we use the single-photon nonlinearity to implement a pulse correlator Our quantum dot–cavity system could form the building block of future high-bandwidth photonic networks operating in the quantum regime15,16,17,18 Researchers report the first demonstration of an ultrafast all-optical switch in the single-photon regime The device, which consists of an InAs/GaAs quantum dot in a photonic crystal defect cavity, exhibits a coherent coupling constant of 141 meV and a quality factor of 25,000 The overall switching time is around 50 ps

Power semiconductor devices having improved high frequency switching and breakdown characteristics

Abstract: Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower-trench based source electrodes. The use of the trench-based source electrode instead of a larger gate electrode reduces the gate-to-drain capacitance (CGD) of the UMOSFET and improves switching speed by reducing the amount of gate charging and discharging current that is needed during high frequency operation.

A spatial light modulator for terahertz beams

Abstract: We design and implement a multipixel spatial modulator for terahertz beams using active terahertz metamaterials. Our first-generation device consists of a 4×4 pixel array, where each pixel is an array of subwavelength-sized split-ring resonator elements fabricated on a semiconductor substrate, and is independently controlled by applying an external voltage. Through terahertz transmission experiments, we show that the spatial modulator has a uniform modulation depth of around 40% across all pixels, and negligible crosstalk, at the resonant frequency. This device can operate under small voltage levels, at room temperature, with low power consumption and reasonably high switching speed.

Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices.

Abstract: We built and measured the dynamical current versus time behavior of nanoscale niobium oxide crosspoint devices which exhibited threshold switching (current-controlled negative differential resistance) The switching speeds of 110 × 110 nm(2) devices were found to be Δt(ON) = 700 ps and Δt(OFF) = 2:3 ns while the switching energies were of the order of 100 fJ We derived a new dynamical model based on the Joule heating rate of a thermally driven insulator-to-metal phase transition that accurately reproduced the experimental results, and employed the model to estimate the switching time and energy scaling behavior of such devices down to the 10 nm scale These results indicate that threshold switches could be of practical interest in hybrid CMOS nanoelectronic circuits

High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators

Abstract: We demonstrate a single-drive push-pull silicon Mach-Zehnder modulator (MZM) with a π-phase-shift voltage of 3.1 V and speed up to 30 Gb/s. The on-chip insertion loss is 9 dB due to the use of a 6 mm-long phase shifter. Higher switching speed up to 40-50 Gb/s is also demonstrated in devices with shorter phase shifters which require higher drive voltages but have lower insertion losses.