Showing papers on "Tantalum capacitor published in 1968"

Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric

Abstract: A NONLINEAR CAPACITOR OF THE METAL-INSULATOR-SEMICONDUCTOR TYPE IN WHICH INVERSION OF THE SEMICONDUCTOR AT THE INSULATOR-SEMICONDUCTOR INTERFACE IS PREVENTED. A SURFACE VARACTOR IS DESCRIBED IN WHICH THE INSULATING LAYER HAS A SELECTED MODEERATE RESISTANCE AND IS OF A HIGH PERMITTIVITY DIELECTRIC. THE SPECIFICATION DISCLOSES FORMING SUCH INSULATING LAYERS BY REACTIVE SPUTTERING.

Porous anode capacitor

Abstract: 1,254,633. Electrolytic capacitors. GENERAL ELECTRIC CO. 23 April, 1969 [11 June, 1968], No. 20837/69. Heading H1M. The effective surface area of the titanium or nickel cathodic casing 2 of a liquid or gel electrolytic porous anode capacitor is increased by depositing a layer 10 of ruthenium on the inner surface thereof. Casing 2 is closed by glassmetal seal structure 11. A porous ruthenium layer is applied by heat deposition from ruthenium trichloride solution on to the previously etched surface.

Mass spectrographic technique for the determination of molybdenum additive in tantalum oxide capacitor films.

Abstract: Recent analytical demands in thin-film technology require a means for quantitative measurements of intentionally added impurities in sputtered tantalum capacitor films. The inherent high sensitivity and surface-sensing ability of the rf vacuum spark source mass spectograph suggest its usefulness for this study [A. J. Ahearn, "Sixth National Symposium on Vacuum Technology Transactions" (Pergamon Press, Inc., New York, 1960)]. It has been demonstrated that with the aid of an internal standard and a sample-scanning technique that samples the film on the substrate, thus eliminating any chemical separations, quantitative estimates of molybdenum additive in films 4000 A thick can be made with an average deviation of ±23%. A concentration range of 0.02% to 3.1% atomic fraction of molybdenum in tantalum films was studied. Because adequate sensitivity is attained without consuming the entire available sample, it is reasonable to predict that sensitivities of 10 ppm atomic or less may be reached. Results show a linear increase in the molybdenum concentration as the molybdenum-to-tantalum sputtering-surface ratio increases. Once this relationship has been established, films with the desired molybdenum concentration can be produced without the need for further chemical analysis. Mass spectrographic results also indicate that the molybdenum additive is homogeneously distributed in the tantalum film.