Showing papers on "Tantalum capacitor published in 1971"

Dielectric Breakdown in Electrolytic Capacitors

Abstract: Starting with the known but unexplained fact that high‐voltage electrolytic capacitors need operating electrolytes of high resistivity, breakdown (sparking) voltages of aluminum and tantalum anodes have been examined. If interfering side reactions are eliminated, breakdown voltage increases linearly with the logarithm of electrolyte resistivity and is insensitive to variations in electrolyte composition and to changes in temperature between 65°C and 95°C.

Electrolytic capacitor with separate interconnected anode bodies

Abstract: A capacitance device having improved high frequency characteristics comprising a plurality of solid tantalum capacitor units arranged in parallel with both anode and cathode connection made to strip-like terminals.

Electrolytic device and semiconductor oxide electrolyte therefore

Abstract: A solid electrolytic capacitor is produced by competing electrolytic reactions that produce a dielectric film on the surfaces of a porous anode and a layer of semiconductive oxides on the dielectric film. Current is passed through the anode and a suitable cathode in an aqueous electrolyte containing a filmforming anion and cation capable of being oxidized to a semiconductive layer on the surface of the dielectric film. The thickness of the semiconductive layer is controlled by an intermediate step of depositing a given amount of a hydroxide of the cation on the dielectric film by reversing the current between the initial and final oxidation.

Capacitor assembly having electrode and dielectric layers overlapped for sealing

Abstract: In an electrical capacitor with electrodes and an intermediate dielectric layer successively printed on a dielectric substrate, the improvement of so disposing the electrodes to minimize exposure of the dielectric layer to the atmosphere, and thus decrease the moisture sensitivity of the capacitor. Optionally, all exposed metallizations may be covered by a layer of solder.

Method of manufacturing thin-film integrated circuits

Abstract: A METHOD OF MAKING A THIN-FILM INTEGRATED CIRCUIT CONTAINING A TANTALUM NITRIDE RESISTOR AND A TANTALUM CAPACITOR IS DISCLOSED. A THIN TANTALUM LAYER IS PROVIDED ON THE UPPER SURFACE OF THE TANTALUM NITRIDE. THIS DOUBLE LAYER IS ANODICALLY OXIDIZED IN ORDER TO ADJUST THE RESISTANCE VALUE OF THE RESISTOR. A TANTALUM PENTOXIDE LAYER CONVERTED FROM THE TANTALUM LAYER SUBSTANTIALLY PROTECTS THE TAN- TALUM NITRIDE FROM THE ETCHING LIQUID IN THE PATTERNING OF A TANTALUM LAYER FOR THE FORMATION OF THE TANTALUM CAPACITOR DEPOSITED ON THE ENTIRE SURFACE OF THE SUBSTRATE SUBSEQUENT TO THE FORMATION OF THE RESISTOR.

Thin film capacitor including an aluminum underlay

Abstract: The use of an aluminum film beneath the tantalum anode of a tantalum thin film capacitor results in a significant enhancement in the frequency response of the capacitor and a lower dissipation factor at frequencies above 10 kilohertz than normally evidenced by devices not including the aluminum film.

Impregnated self-healing alternating voltage capacitor

Abstract: An AC voltage capacitor employs a pair of layers of varnish with a metallic layer therebetween to form one electrode of the capacitor, the layer structure being carried by a second layer structure including a rough surface dielectric having metallic layers on both sides which are electrically connected together to form the other electrode of the capacitor.

Sintered tantalum for electrodes of capacitors

Abstract: 1. IN A METHOD OF MAKING A TANTALUM ABODE COMPRISING (A) COMPRESSION MOLDING A TANTALUM POWER, (B) SINTERING THE RESULTING MOLDED PRODUCT UNDER VACUUM TO FORM A POROUS SINTERED MASS, (C) SUBJECTING SAID POROUS SINTERED MASS TO ANODIC OXIDATION TO FORM A DIELECTRIC OXIDE FILM HAVING A THICKNESS OF 400-4,::: A, AND (D) FILLING THE PORES OF THE CATHODE SIDE OF SAID SINTERED MASS WITH MAGNESIUM DIOXIDE, THE IMPROVEMENT WHEREIN SAID TANTALUM POOWER HAS AN AVERAGE PARTICLE DIAMETER BY THE AIR PERMEABILITY METHOD F ($) AND A BULK DENSITY D (G./CM.3)RELATIONSHIP SUCH THAT WHEN 12$F>8.4, 3.6$2.8, WHEN 8.4$F>7.8, 3.4$D>2.3, WHEN 7.8$F>7.2, 3.2$D$1.8, OR WHEN 7.2$F>2, 2.8$D$1.5.

Production of tantalum capacitors by powder metallurgy

Abstract: A suitably open pored tantalum capacitor can be formed by enclosing tantalum powder, with an average particle diameter of 8 mu, within two elastomeric material envelopes, placing this assembly in a die, together with a tantalum terminal integral with the powder, and applying an isostatic pressure. The inner envelope is soft and malleable whereas the outer is hard; this configuration prevents extrusion of material from the inner envelope, thus preventing scoring of the die, and facilitates easy removal of the compact. Compacts are subsequently sintered for 10-30 mins. at 1600-2000 degrees C to obtain a density of 50-80%. In addition a claim is made for the use of tantalum particles having an anodic oxide coating to act as the dielectric.