Showing papers on "Tantalum capacitor published in 1985"

Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor

Abstract: A high density integrated circuit structure, for example a dynamic memory cell, is described which includes an active/passive device in combination with a capacitor structure. The capacitor structure is of the polysilicon-oxide-silicon type and is formed on the sidewalls of a mesa-shaped and dielectrically isolated region of silicon material resulting from the formation of an isolation trench in the silicon. The trench is filled with a plastic material, such as polyimide. The capacitor is formed by the isolated region of silicon material which functions as the first capacitor plate, a doped polysilicon layer provided on the vertical walls of the mesa serving as the second capacitor plate and a thin dielectric layer interposed between the two plates serving as the capacitor's dielectric. Since the polysilicon is wrapped around the periphery of the mesa as a coating on the vertical sidewalls thereof, it gives rise to a large storage capacitance without an increase in the cell size.

An organic semiconductor electrolyte capacitor and process for producing the same

Abstract: An organic semiconductor electrolyte capacitor and a process for producing such a capacitor having improved loss and impedance characteristics and which can be produced using a simple apparatus and with reduced waste of expensive materials. A dielectric oxide film is formed on the surface of a metal anode, and a solid-electrolyte layer is formed on the dielectric oxide film. The electrolyte layer is made by melting and solidifying a mixture of an isopropylisoquinolinium tetracyanoquinodimethane complex salt and a lactone compound.

Method of manufacturing chip-type aluminum electrolytic capacitor

Abstract: In a method of manufacturing a compact and light-weight chip-type aluminum electrolytic capacitor, thin external leads are welded to flat anode and cathode foils. The anode and cathode foils are superposed with an insulating spacer interposed therebetween. The portion between the anode and cathode foils is impregnated with an electrolytic solution to obtain a capacitor element. The two surfaces of the capacitor element are covered with synthetic resin laminate films. The openings of the laminate films are welded and sealed to complete the capacitor.

Characteristics of dielectric failure in REP rate pulse capacitors

Abstract: Repetitively discharged energy storage capacitors are used in a variety of applications where energy density (J/m3) and inverse specific weight (J/kg) are parameters as critical as reliability. The energy density of an ideal capacitor is proportional to the square of the average electric field in the dielectric, and directly proportional to the effective dielectric constant. Since the useful lifetime of the capacitor is also a function of the electric field, energy density is, in effect, a function of the required lifetime and reliability for any given dielectric system.

Tantalum powders for the manufacture of electrodes for electrolytic capacitors with a high charge and low leakage current

Abstract: Tantalum powders for electrolytic capacitors having improved electrical capacity and low direct current leakage characteristics are produced by the introduction of combinations of carbon, nitrogen and sulfur-containing materials.