Showing papers on "Tantalum capacitor published in 1991"

An electric double-layer capacitor with high capacitance and low resistance

Abstract: The authors describe the development of an electric double-layer capacitor with ultra-high capacitance and extremely low DC resistance. The capacitance ranges from 1 F to 500 F and the DC resistance is less than one-fifth of that of the conventional capacitor with organic electrolytes. The capacitor consists of an activated carbon layer newly developed on aluminum foil collector electrodes, a separator, and an organic electrolyte. Details of the electrical characteristics and the reliability of the capacitors are presented. Several features of activated carbon electrodes and the mechanism for the improvement of the DC resistance are discussed. Some examples of the potential application of the capacitor for high-current-load uses are discussed. >

Semiconductor memory device having a stacked capacitor cell structure

Abstract: In a stacked capacitor cell structure of a semiconductor memory device, the MIM (metal-insulator-metal) capacitor to be used as a transfer gate comprises at least a unit stack of a first insulation film, a lower capacitor electrode, a capacitor gate insulation film, an upper capacitor electrode, another capacitor gate insulation film and an extension of the lower capacitor electrode. Thus, the surface area of the lower capacitor electrode can be enlarged without increasing the plane area exclusively occupied by memory cells. Moreover, with such a configuration, since the surface area of the lower capacitor electrode can be augmented without increasing the film thickness of the electrode, the technical difficulties that the currently known methods of manufacturing semiconductor memory devices with a stacked capacitor cell structure encounter are effectively eliminated and consequently troubles such as short-circuited lower capacitor electrodes become non-existent.

Split metal plate capacitor and method for making the same

Abstract: A metal-to-polysilicon capacitor, a floating-gate transistor containing such a capacitor, and a method for making the same is disclosed. The bottom plate of the capacitor is formed over a field oxide structure, and the capacitor dielectric is deposited thereover. A first metal layer, such as titanium nitride or a titanium-tungsten alloy, is formed over the capacitor dielectric, and is patterned and etched to define the top plate of the capacitor and, accordingly, the capacitor size. Multilevel dielectric is formed thereover, and a contact via to the top plate is etched therethrough. Metallization is sputtered overall, to make contact to the top plate and elsewhere in the circuit.

Substrate with built-in capacitor

Abstract: PURPOSE: To reduce the occurrence of high-frequency switching noise which is generated when logic circuits are simultaneously switched by reducing the inductance between an LSI and a capacitor formed on a substrate. CONSTITUTION: A capacitor is formed so that the inductance between the bonding pad of an LSI mounted on a ceramic substrate 3 and the electrode 7 of the capacitor can be suppressed to 0.05nH. Since the inductance between the LSI and the capacitor is suppressed, the high-frequency component of the noise generated by power supply can be reduced. Therefore, the rise time of signals can be shortened and the operating can be increased. COPYRIGHT: (C)1992,JPO&Japio

Cathode material for electrolytic capacitor

Abstract: PURPOSE:To obtain an electrolytic capacitor, having a small size, a large capacity, a small variation in capacity and stable characteristics. CONSTITUTION:As a cathode of an electrolytic capacitor, a laminate in which a first thin film layer made of nitride of metal such as titanium, tantalum, hafnium, niobium, zirconium, vanadium, chromium, etc., and a second thin film layer made of metal oxide having 3 to 30Angstrom of thickness, and modified from metal nitride to be formed on the first layer, are formed on a surface of a base material made of aluminum or aluminum alloy, is used.

Wet tantalum capacitor with liner

Abstract: A tantalum electrolytic capacitor utilizes a tantalum liner in place of previously used silver liner thus permitting the capacitor to withstand a reverse dc voltage up to 3 VDC continuously with no serious degradation of electrical characteristics.

Process for manufacturing a solid state electrolytic capacitor

Abstract: A process for manufacturing a solid state electrolytic capacitor having on an anode (1) a dielectric coating layer (3) and a solid state electrolytic layer (4), comprises the steps of forming a conductive polymer compound layer (4) as the solid state electrolytic layer, and subsequently forming the dielectric coating layer (3) by anodizing.

Manufacture method of solid electrolytic capacitor

Abstract: PURPOSE:To provide the title manufacturing method of solid electrolytic capacitor having the excellent dielectric characteristics and excellent bond properties of dielectric oxide film onto the polyaniline solid electrolyte in high yield. CONSTITUTION:The title solid electrolytic capacitor is manufactured by a method wherein a tantalum oxide film to be a dielectric by anode-oxidizing tantalum is provided on the tantalum and then said film is coated with the mixed solution of polyaniline and an aromatic polyamyl acid to be dried up, next the film is processed with polystyrene sulfonic acid water solution so that said polyaniline may be doped with sulfonic acid ions to be turned into a conductive film and finally, a terminal is provided on the film to manufacture the title solid electrolytic capacitor.

Highly integrated semiconductor memory device with trench capacitors and stacked capacitors

Abstract: A highly integrated semiconductor memory device comprises a plurality of memory cells formed by alternately disposing a stack-type capacitor cell and a combined stack-trench type capacitor cell both in row and column directions. Each storage electrode of the capacitor of the memory cell is extended to overlap with the storage electrode of the capacitor of the adjacent memory cell. The combined stack-trench type capacitor is formed into the substrate to increase the storage capacitance thereof which allow the storage capacitance of the stack-type capacitor to increase by extending the storage electrode of the capacitor. Due to the alternate arrangement of stack-trench type capacitor and stack-type capacitor, step coverage, leakage current and soft errors of stack-trench type capacitor are prevented.

Memory capacitor of semiconductor memory and manufacture thereof

Abstract: PURPOSE:To easily manufacture a capacitor for storage by dry etching without lowering the capacitance of the capacitor by constituting the capacitor of a dielectric layer and lower and upper electrodes on both sides of the dielectric layer and using an oxide conductor for the lower electrode. CONSTITUTION:This capacitor for storage is constituted of a lower electrode composed of an oxide conductor 13, barrier metal 11, and metallic electrode 12, dielectric layer 14, and upper electrode 15. Some capacitors do not contain the barrier metal 11 and metallic electrode 12. The oxide conductor 13 can be formed of, for example, ZnO, SnO2, SrVO3, etc. The dielectric layer 14 can be formed of, for example, such a ferroelectric substance as PLZT, PZT, etc., or a material having a high dielectric constant, such as Ta2O5, etc. Therefore even when the ferroelectric material is formed at a 60 deg.C at the time of manufacturing this capacitor, the capacitance of the capacitor does not drop, since the lower electrode is not oxidized and no low-permittivity layer is formed.

Electrical Characterization Of Glass, Teflon, And Tantalum Capacitors At High Temperatures

Abstract: Dielectric materials and electrical components and devices employed in radiation fields and space environment are often exposed to elevated temperatures among other things. These systems must, therefore, withstand the high temperature exposure while still providing good electrical and other functional properties. In this work, experiments were carried out to evaluate glass, teflon, and tantalum capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature up to 200/spl deg/C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed in a temperature range from 20 to 200 /spl deg/C. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors investigated for high temperature applications.

Manufacture of solid tantalum capacitor

Abstract: PURPOSE:To improve capacitor properties and to reduce development of shortcircuit defects greatly by covering an anode lead with hydrophilic heat resistant insulator by making a surface thereof conductive and by carrying out required electrolytic polymerization. CONSTITUTION:An anode lead 7 which is connected to a sintered tantalum element 1 is covered with a dielectric oxide film 2. A part of the lead 7 is further covered with a hydrophilic heat resistant insulator 3. The insulator 3 and the film 2 are made conductive by a conductive polymer film 4 which is formed by chemical oxidative polymerization. Furthermore, a conductive high polymer film 5 is formed by electrolytic polymerization between an external cathode and an anode of a conductor 8 which is in contact with a part of the film 4, and a solid tantalum capacitor is manufactured. According to this constitution, it is possible to realize a small leak current and a large tangent of a loss angle without damaging the film 2, to produce the film 4 uniformly by the insulator 3, thereby making production of the film 5 uniform, to improve capacitor properties and to remarkably reduce development rate of shortcircuit defects.

Method of making polyaniline solid electrolyte capacitor

Abstract: Highly conducting polyaniline is produced in situ in a tantalum capacitor by subjecting an excess of monomeric aniline to a solution having a low concentration of ammonium persulfate reagent The monomer is oxidized by the reagent in preference to the polymer, so that the presence of excess monomer protects the polymer as it is produced against further oxidation to a less conductive species

Capacitance type dynamic quantity detector

Abstract: PURPOSE:To lessen the error of an electrostatic capacity caused by the production dispersion of a distance between electrodes and eliminate offset regulation. CONSTITUTION:A first capacitor 11 in which an electrostatic capacity changes in respose to a dynamic quantity, a second capacitor 12 which has the same distance between electrodes as the first capacitor 11 and a third capacitor 21 and a fourth capacitor 22 whose electrode area ratios are equal with ones of the first capacitor 11 and the second capacitor 12 and distances between the electrodes are mutually equal are formed. The ratio of the electrostatic capacities of the first capacitor 11 and the second capacitor 12 and the other ratio of the electrostatic capacities of the third capacitor 21 and the fourth capacitor 22 are calculated to calculate the difference between these ratios.

Thin film capacitor and manufacture thereof

Abstract: PURPOSE: To obtain a thin film capacitor, having excellent dielectric breakdown voltage and low dielectric loss, and the manufacturing method of the capacitor. CONSTITUTION: In a thin film capacitor consisting of a substrate, a lower electrode, a dielectric thin film and an upper electrode, an intermediate layer, consisting of tantalum or titanate, having the thickness of 3 to 500nm is characteristically provided between the lower electrode and the dielectric thin film. After the above-mentioned intermediate layer has been formed, or after a dielectric thin film has been formed on the intermediate layer, a heat treatment is characteristically conducted at 300 to 1000°C in an oxidizing atmosphere. COPYRIGHT: (C)1992,JPO&Japio

Polar electronic part and carrier tape

Abstract: PURPOSE:To obtain a polar electronic part, whose polarity can be known not only from the polarity indication on the imprinted surface side but also from the shape on the electrode terminal side, and a carrier tape, for which all can be inserted in the same direction and nonconformity due to inverse insertion can be prevented, by making the shape of the bottom surface in the anode side and in the cathode side asymmetric, etc. CONSTITUTION:In a polar electronic part, wherein anode and cathode terminals 4 is led out from an electronic part element and it is covered with insulating resin 3 except a part of the anode and cathode terminals 4, the shape of the bottom surface in the anode side and in the cathode side is made asymmetric. Further, in a carrier tape having equally spaced box-shaped product inserting parts 2 with the same shape, the bottom surface shape of the product inserting part 2 is made aymmetric. For example, at the surface in the molded electrode terminal side of the insulating resin 3 in a resin molded chip type tantalum capacitor, a recess part 6 is formed by obliquely cutting the insulating resin part on both sides of the electrode terminal 4 in the anode side, and the product inserting part 2 of the carrier tape has a structure with a projecting part 5 to fit the recess 6 of the resin molded chip type tantalum capacitor.

Semiconductor integrated circuit devices with capacitors

Abstract: Integrated circuit devices, chips and methods of making and operating them are disclosed. The devices are specially adapted for high frequency operation e.g. at or above 1 GHz. Inductive noise caused by switching at these frequencies - and which can interfere with switching - is inhibited by using a large bypass capacitor connected between power and ground connections outside the chip, and a small bypass capacitor connected between the same power and ground connections but formed inside the chip. The smaller capacitor cuts noise attributable to the wiring between the larger capacitor and the chip. The chip can have many of the smaller capacitors, even one or more per gate. In embodiments, small capacitors (160,161,162,164,165,166) form power and ground bonding pads at the front surface of the chip substrate (168). Tantalum pentoxide, and other suitable dielectrics having relative dielectric constant of 10 or more at 1 GHz, are used to form the capacitors.

Advances in high C-V multilayer ceramic chip capacitors

Abstract: It is pointed out that the multilayer ceramic chip capacitor (MCC) has made great strides in the area of package density, described as the capacitance-voltage (C-V) product divided by the case size. This high-density packaging requirement is manifest in telecommunications, computers, and consumer electronics and other battery-powered products. The increased use of battery-powered products and systems has in turn reduced voltage rating requirements, and therefore allows reduced dielectric thicknesses for MCCCs. The voltage rating for these dense multilayer ceramic chip capacitors was selected at 16 V, to allow for a reasonable factor of safety in most battery-powered applications and because of its typical rating for tantalum capacitors. This technology provides a means for packaging a 16-V, 10- mu F capacitor in an EIA 1206 (0.120 in*0.060 in) case size. >

The Effects of Electrode Materials on the Electrical Properties of $Ta_2O_5$ Thin Film for DRAM Capacitor

Abstract: A new electrode material for capacitor was developed to obtain both high dielectric constant and improved electrical properties for use in DRAM. High leakage current and low breakdown field of as-deposited film on Si is due to the reduction of by silicon at /electrode interface. anneal improves the electrical properties of capacitor with Si electrode, but it thickens the interfacial oxide and lowers the dielectric constant, subsequently. capacitor with TiN exectrode shows better electrical properties and higher dielectric constant than post heat treated film on Si. No interfacial oxide layer at /TiN interface suggests that there\`s no Interaction between and electrode. TiN is a adequate electrode material for capacitor.

Solid electrolyte capacitor, namely tantalum capacitor, with stamped incorporated fuse and process for its manufacturing

Abstract: A capacitor with solid electrolyte and with incorporated fuse (10) includes, embedded in an electrically insulating resin block, a capacitor body provided with two electrodes connected up respectively, by two connection tabs, to output terminals (+, -), and with a fuse test terminal; one of the connection tabs (6) is formed of a first section (6B) fixed to one of the electrodes of the capacitor body and emerging out of the body in order to form the fuse test terminal and of a second section (6A) emerging out of the block to form a normal application terminal; an elongate strip (10) forming a fuse, made of the same material as these sections, on its own establishes an electrical link between the sections (6A, 6B) while being shrouded by a support-mass of thermally insulating resin, extending from one to the other of the two sections, and itself embedded in the resin constituting the block.

High value tantalum capacitors using organic semiconducting cathodes - uses tantalum foil with powdered tantalum sintered to its surface

Abstract: The Ta-capacitors with semiconducting cathode feature a Ta-foil or sheet which has on one or both surfaces Ta powder attached by sintering and an organic semiconducting cathode. The Ta-powder layer is pref. 0.01-0.5mm thick, esp. 50-100 micron. The carrier is pref. etched Ta-foil or sheet. The organic semiconductors used as cathode are pref. a TCNQ-complex, polyethylene, polypyrrole, polyaniline or polythiophene. The foil or sheet can be folded or spiralled and the cathode material is applied after the final shape has been achieved. Contacts can be made by including an Al-foil in the windings. USE/ADVANTAGE - The use of the modified foil or sheet results in a large are Ta-electrode which has a reduced penetration depth compared with a current sintered powder electrode. This allows easier penetration by the cathode material. The resulting electrode area is much larger than can be achieved using etched foils.

Aluminum foil as electrodes of the electrolytic capacitor

Abstract: PURPOSE:To enhance the etching performance to securely obtain a high electrostatic capacity of aluminum foil as electrodes of an electrolytic capacitor by setting the amount of pre-etching surface water absorption of the aluminum foil in a particular range CONSTITUTION:Until aluminum foil that is produced as electrodes of an electrolytic capacitor undergoes etching, the surface of the aluminum foil absorbs the atmospheric water content When the amount of the atmospheric water content that the surface of the aluminum foil absorbs before etching starts is set at less than 1 X 10 molecs/cm , the etching characteristic of the aluminum foil is enhanced, the aluminum foil can obtain an extremely great surface expansibility by the etching, thereby being able to secure a high electrostatic capacity of the electrolytic capacitor

Electrical characterization of glass, teflon, and tantalum capacitors at high temperatures

Abstract: Dielectric materials and electrical components and devices employed in radiation fields and space environment are often exposed to elevated temperatures among other things. These systems must, therefore, withstand the high temperature exposure while still providing good electrical and other functional properties. In this work, experiments were carried out to evaluate glass, teflon, and tantalum capacitors for potential use in high temperature applications. The capacitors were characterized in terms of their capacitance and dielectric loss as a function of temperature up to 200/spl deg/C. At a given temperature, these properties were obtained in a frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed in a temperature range from 20 to 200 /spl deg/C. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors investigated for high temperature applications.

Improved tantalum capacitor and its manufacture

Abstract: PURPOSE: To obtain a Ta capacitor by inserting a Ta rod into Ta powder, molding the rod applied with powder by applying a differential compressive force, compacting the rod applied with powder and the matching part thereof by applying specified pressures respectively and then sintering, anodizing and forming a cathode. CONSTITUTION: A die 20 is filled with a Ta powder composition and a Ta rod 13 is matched with protrusions 25, 26. Dies 21, 22 are then closed to compress the powder in a main volume part 26' at a density of 4-7g/cc and the powder in the range 27 to be matched with the rod 13 at a density of 8-10g/cc. A green pellet thus obtained is sintered at 1600 deg.C for about 20min under 1×10 Torr in order to remove additive materials and then Ta powder and Ta rod are connected mechanically and electrically to produce a tight sponge- like body. It is then anodized normally and a cathode is formed thereon thus completing a tantalum capacitor.