Showing papers on "Tantalum capacitor published in 2004"

Electrolytic capacitors with polymeric outer layer

Abstract: Electrolytic capacitors having low equivalent series resistance and low leakage current are described. The electrolytic capacitors include a solid electrolyte layer of a conductive material in particular a conductive polymer, and an outer layer that includes binders, polymeric anions and conductive polymers (e.g., polythiophenes). Also described is a method of preparing electrolytic capacitors that involves forming the conductive polymer of the solid electrolyte layer in situ by means of chemical oxidative polymerization or electrochemical polymerization. Electronic circuits that include the electrolytic capacitors are also described.

Capacitor and method for producing a capacitor

Abstract: An electrode for a capacitor, such as an electrolytic capacitor, includes a substrate comprising a metal. A carbide layer is provided adjacent the substrate, and a layer of material comprising an oxide of manganese is provided adjacent the carbide layer. According to one embodiment, the layer of material may also comprise activated carbon. The capacitor may be configured for use with a variety of devices, including implantable medical devices.

Methods of producing integrated circuit devices utilizing tantalum amine derivatives

Abstract: In a method for forming a gate electrode, a dielectric layer having a high dielectric constant is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR 1 )(NR 2 R 3 ) 3 in which R 1 , R 2 and R 3 represent H or C 1 -C 6 alkyl group are introduced onto the dielectric layer to form a tantalum nitride layer. A capacitor metal layer or a gate metal layer is formed on the tantalum nitride layer. The capacitor metal layer or the gate metal layer and the tantalum nitride layer are patterned to form a capacitor electrode or a gate electrode. The tantalum amine derivatives are used in forming a dual gate electrode.

Methods of forming capacitor constructions

Abstract: The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.

Thin film capacitor and method of manufacturing the same

Abstract: A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.

Printed circuit board including embedded capacitor having high dielectric constant and method of fabricating same

Abstract: Disclosed is a PCB including embedded capacitors and a method of fabricating the same. A dielectric layer is formed using a ceramic material having a high capacitance, thereby assuring that the capacitors each have a high dielectric constant corresponding to the capacitance of a decoupling chip capacitor.

Module incorporating a capacitor, method for manufacturing the same, and capacitor used therefor

Abstract: A module incorporating a capacitor, the module including a circuit board and a layer incorporating a capacitor, wherein the circuit board includes a wiring layer and a via contact for providing electrical conductivity to a cathode and an anode of the capacitor. The layer incorporating the capacitor includes a ferromagnetic layer integrated with at least a portion of a surface of the capacitor, and in the circuit board or the layer incorporating the capacitor, a coil is wound around the capacitor, or an inductor component is disposed in parallel with the capacitor. Accordingly, a module incorporating a capacitor in which miniaturization, a higher density and a reduced thickness have been achieved, as well as a method for producing the module and a capacitor used for the module, are provided.

Solid electrolytic capacitor and electric circuit

Abstract: A solid electrolytic capacitor includes a cathode including a solid electrolytic layer, an anode, and a dielectric layer provided between the cathode and the anode. The anode includes an anode body, an input anode terminal and an output anode terminal. A bypass current path for causing circuit current to detour around the anode body is formed between the input anode terminal and the output anode terminal.

Thin film capacitor, high-density packaging substrate incorporating thin film capacitor, and method for manufacturing thin-film capacitor

Abstract: A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

Characterization of tantalum oxide-ruthenium oxide hybrid capacitors

Abstract: The ac and dc performance and leakage current of Evans tantalum oxide-ruthenium oxide hybrid capacitors were characterized at room temperature The RC time constants were in the range from 2 to 045 ms and dependent on the maximum operational voltage of the capacitor The gravimetric and volumetric energy densities of hybrid capacitors were in the range of 0074-0233 J/g and 0388-1384 J/cm/sup 3/, respectively The gravimetric and volumetric power densities of hybrid capacitors were in the range of 19-259 W/g and 100-1540 W/cm/sup 3/, respectively A comparison of the performance between hybrid capacitors to conventional aluminum and tantalum electrolytic capacitors is made in this paper

Analog capacitor having at least three high-k dielectric layers, and method of fabricating the same

Abstract: There are provided an analog capacitor having at least three high-k dielectric layers, and a method of fabricating the same. The analog capacitor includes a lower electrode, an upper electrode, and at least three high-k dielectric layers interposed between the lower electrode and the upper electrode. The at least three high-k dielectric layers include a bottom dielectric layer contacting the lower electrode, a top dielectric layer contacting the upper electrode, and a middle dielectric layer interposed between the bottom dielectric layer and the top dielectric layer. Further, each of the bottom dielectric layer and the top dielectric layer is a high-k dielectric layer, the absolute value of the quadratic coefficient of VCC thereof being relatively low compared to that of the middle dielectric layer, and the middle dielectric layer is a high-k dielectric layer having a low leakage current compared to those of the bottom dielectric layer and the top dielectric layer. Therefore, with use of the at least three high-k dielectric layers, the VCC characteristics and the leakage current characteristics of the analog capacitor can be optimized.

A decision system for electrolytic capacitors diagnosis

Abstract: Electrolytic filter capacitors are frequently responsible for static converters breakdowns The rise of temperature within capacitor is the most significant factor upon ageing and so lifespan To predict the ageing of the capacitor, a method of predictive maintenance has been developed It consists in monitoring the voltage ripple of the capacitor This ripple is the best indicator of its worn state It is function of parameters such as input voltage, output current and ambient temperature A reference system taking into account all these parameters is determined for sound capacitors We deducted that the dispersion of input voltage had a weak influence upon voltage ripple compared to other parameters such as output current and ambient temperature And precisely the temperature is being an influent parameter in the diagnosis, measurement must be very relevant That is why we measured the internal temperature of capacitor which takes into account the ambient temperature but also the internal heating of capacitor This measurement is done in an environment not confined for not which is distorted We then checked the relevance of our modifications by comparing our results with the actual values of the state of capacitors deduced using a bridge RLC

Capacitor with aluminum oxide and lanthanum oxide containing dielectric structure and fabrication method thereof

Abstract: Disclosed is a capacitor with a dielectric structure having an aluminum oxide layer and a lanthanum oxide layer and a fabrication method thereof. The capacitor includes: a lower electrode; a first dielectric layer with a high energy band gap formed on the lower electrode; a second dielectric layer formed on the first dielectric layer, the second dielectric layer with a high dielectric constant, wherein an energy band gap of the second dielectric layer is lower than the energy band gap of the first dielectric layer; and an upper electrode formed on the second dielectric layer.

Wet tantalum capacitor usable without reformation and medical devices for use therewith

Abstract: A therapeutic medical device such as a defibrillator (1), comprising an electrolytic capacitor (9) including an anode, cathode and an electrolyte. The anode is anodized in an electrolyte comprising an aqueous solution of alkanol amine, phosphoric acid and an organic solvent preferably defined by formula 1: CH3-(OCH2CH2)m-OCH3 Formula 1 wherein m is an integer from 3 to 10.

Using a network method to reduce the parasitic parameters of capacitors

Abstract: In this paper, a method is proposed to reduce the equivalent series inductor (ESL) and equivalent series resistor (ESR) of capacitors. The method is theoretically analyzed at first; and then experiments are carried out to verify this method. It is shown that this method can be used for both film capacitors and electrolytic capacitors. Both ESL and ESR can be reduced. The proposed method can be very useful to reduce EMI, HF current ripple.

Capacitor and production method of the capacitor

Abstract: A method of producing a capacitor which uses a conductor formed with a dielectric layer on the surface thereof as one electrode and a semiconductor layer as the other electrode, wherein an electric fine defect is produced in the dielectric layer before the semiconductor layer is formed on the dielectric layer by a conduction method. The capacitor according to this production method has a good capacity appearance rate, a low ESR and an excellent reliability.

Dielectric properties and space charge behavior in SiC ceramic capacitor

Abstract: Strong space charge response is observed in SiC ceramic capacitors at low frequencies up to 0.1MHz. It leads to a dielectric constant of 2 910 000 at 100Hz. The critical temperature is observed near 773K. The losses decrease with increasing temperature. Strong frequency dependence of the dielectric properties is also detected. The SiC ceramic capacitor might be suitable as high-temperature by-pass capacitor in low voltage circuits.

Ceramic container and tantalum electrolytic capacitor using it

Abstract: PROBLEM TO BE SOLVED: To provide a tantalum electrolytic capacitor which can be stabilized and can correctly operate a tantalum electrolytic capacitor element over a long period of time, excels in mass production, and can keep the airtightness of the tantalum electrolytic capacitor element, even if the tantalum electrolytic capacitor is exposed to high temperature at the time of soldering the tantalum electrolytic capacitor. SOLUTION: In a ceramic container 6, the recess of a rectangular parallelepiped shape is formed in a center on a upper surface. A first metalized layer 3a and a second metalized layer 3b are mutually independently formed in the bottom of the recess. In the first metalized layer 3a, a trench 3-D is formed in the formation area of the first metalized layer 3a of the bottom of the recess. COPYRIGHT: (C)2005,JPO&NCIPI

Improvement in Leakage Current and Breakdown Field of Cu-Comb Capacitor Using a Silicon Oxycarbide Dielectric Barrier

Abstract: This work investigates in the first place, the improvement in leakage current and breakdown field of the copper metal-insulator-semiconductor (Cu-MIS) capacitor with a plasma-enhanced chemical vapor deposited (PECVD) amorphous silicon oxycarbide (α-SiCO, k = 3.7) dielectric barrier. This is followed by investigating the improvement in leakage current and breakdown field of the Cu-comb capacitor with a carbon-doped low-k PECVD organosilicate glass (k = 3) as the intermetal dielectric and an α-SiCO dielectric film as the Cu cap barrier. The leakage current and breakdown field of Cu-MIS and Cu-comb capacitors are dependent on the species of the dielectric barrier. The Cu-MIS and Cu-comb capacitors with an α-SiCO dielectric barrier exhibit a leakage current at least three orders of magnitude smaller than those with an amorphous silicon carbide (α-SiC, k = 4.4) dielectric barrier at an applied electric field of 1.6 MV/cm between 25 and 250°C. Moreover, the breakdown field of the Cu-MIS and Cu-comb capacitors with an α-SiCO dielectric barrier, measured at 200°C, are 60 and 25%, respectively, higher than that of the capacitors with an α-SiC barrier. The decreased leakage current and increased breakdown field of the Cu-MIS and Cu-comb capacitors with an α-SiCO dielectric barrier are attributed to the higher density, oxygen-improved film property, non-semiconductor behavior, and lower fringe- or surface-electric field of the α-SiCO dielectric film.

Integrated Semiconductor Metal-Insulator-Semiconductor Capacitor

Abstract: An integrated MIS capacitor has two substantially identical MIS capacitors. A first capacitor comprises a first region of a first conductivity type adjacent to a channel region of the first conductivity type in a semiconductor substrate. The semiconductor substrate has a second conductivity type. A gate electrode is insulated and spaced apart from the channel region of the first capacitor. The second capacitor is substantially identical to the first capacitor and is formed in the same semiconductor substrate. The gate electrode of the first capacitor is electrically connected to the first region of the second capacitor and the gate electrode of the second capacitor is electrically connected to the first region of the first capacitor. In this manner, the capacitors are connected in an anti-parallel configuration. A capacitor which has high capacitance densities, low process complexity, ambipolar operation, low voltage and temperature coefficient, low external parasitic resistance and capacitance and good matching characteristics for use in analog designs that can be integrated with existing semiconductor processes results.

Tantalum capacitor case with increased volumetric efficiency

Abstract: A capacitor and a method for assembling a capacitor. A capacitor is assembled from a case, which contains an anode that is electrically insulated from the case by isolators. A washer is placed above the anode. This washer transfers force from a capacitor cap to the isolators and anode, securing the anode in place. A cap is placed on the case. The cap may be shaped as a toroid with an outer and an inner annular wall. The annular walls may meet at the top and have an opening at the bottom creating a cap cavity in order to store electrolyte or other materials in the cap. The cap also supports a glass seal that insulates the lead tube and lead wire coming from the anode. Once assembled, the capacitor is filled with electrolyte. A weld extends around the cap to secure the cap to the case. The weld may be administered from the top of the capacitor.

Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same

Abstract: The present invention relates to a capacitor having a hafnium oxide and aluminum oxide alloyed dielectric layer and a method for fabricating the same. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein a portion of the dielectric layer contacting one of the lower electrode and the upper electrode is formed by alloying hafnium oxide and aluminum oxide together.

Solid electrolytic capacitor, electric circuit, and solid electrolytic capacitor mounting structure

Abstract: A solid electrolytic capacitor (A 1 ) includes a porous sintered body ( 10 ) of metal particles or conductive ceramic particles, anode wires ( 11 A, 11 B) partially inserted in the porous sintered body ( 10 ), an anode terminal provided by portions of the anode wires ( 11 A, 11 B) which project from the porous sintered body ( 10 ), and a cathode ( 30 ) formed on an obverse surface of the porous sintered body ( 10 ). The anode terminal includes a first and a second anode terminals ( 11 a, 11 b ), and circuit current flows from the first anode terminal ( 11 a ) toward the second anode terminal ( 11 b ) through the porous sintered body ( 10 ). Therefore, noise cancellation property can be enhanced with respect to a wide frequency band, and large electric power can be supplied with high responsiveness. In a circuit using the solid electrolytic capacitor (A 1 ), the space efficiency on aboard can be enhanced, and the cost can be reduced.

Production method of a capacitor

Abstract: A method for producing a capacitor having a good capacitance appearance factor and a low ESR comprising, as one electrode (anode), an electric conductor having pores and having formed on the surface thereof a dielectric layer and, as the other electrode (cathode), a semiconductor layer formed on the electric conductor by energization in an electrolytic solution, the method comprising impregnating pores with a semiconductor layer-forming precursor before energization to render the concentration of semiconductor layer-forming precursor in pores higher than that of semiconductor layer-forming precursor in the electrolytic solution; a capacitor produced by the method; and an electronic circuit and an electronic device using the capacitor.

Production method of solid electrolytic capacitor

Abstract: The present invention relates to a method for producing a niobium-oxide solid electrolytic capacitor having an anode being at least one member selected from niobium monoxide, niobium and an alloy mainly comprising niobium, or a mixture of niobium monoxide with niobium or an alloy mainly comprising niobium, which capacitor formed by the electrolytic oxidation (electrochemical formation) of the anode; and the method including sequentially repeating twice or more a step of exposing a dielectric layer to a temperature to 1,000° C. before formation of a cathode and a step of re-electrochemically forming the dielectric layer. The niobium solid electrolytic capacitor obtained by the present invention improved in the leakage current value after mounting and excellent in reliability.

Solid electrolytic capacitor and process for its fabrication

Abstract: The solid electrolytic capacitor of the invention is provided with a first electrode layer and a second electrode layer between which are disposed a dielectric layer formed on the surface of the first electrode layer, and a solid electrolyte layer. The solid electrolyte layer is formed adjacent to the dielectric layer, and it is made of a solid electrolyte containing a conjugated polymer compound and a polymer compound having a proton-donating functional group. Repaired sections are formed in the solid electrolytic capacitor as damaged sections generated in the dielectric layer undergo self-repair due to the metal oxidation power or oxidation catalyzing power of the solid electrolyte. It is thereby possible to reduce deterioration with time and sufficiently inhibit defects and short circuits between electrodes.

Solid electrolyte capacitor

Abstract: The present invention relates to a solid electrolyte capacitor having a small size, a high capacitance, a low ESR and an excellent LC value, which comprises a jacketed capacitor element obtained by sequentially stacking a dielectric oxide film layer, a semiconductor layer and an electrically conducting layer on a surface of a valve-acting metal sintered body or electrically conducting oxide sintered body connected with an anode lead, wherein the thickness of the semiconductor layer in the vicinity of the anode lead-connection point on the sintered body face connected with an anode lead is 5 µm or less, and also relates to an electronic circuit and electronic device using the capacitor

Reliability of Tantalum Polymer Capacitors

Abstract: The demand for Low-ESR tantalum capacitors has popularized the use of high conductivity conductive polymer counter electrode designs over more established manganese dioxide (MnO2) tantalums. While the reliability of MnO2 tantalums has been well studied, the expected performance of conductive polymer tantalums is less understood. To characterize the reliability of polymer tantalums, accelerated lifetesting utilizing high electric field stress and temperature is performed on multiple test samples. The time-to-failure data is fit to a failure model and the model is then used to predict device reliability under less strenuous conditions. Considering all the data, median life for the test sample at maximum rated conditions was found to exceed 300 years.

Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectric

Abstract: Microminiaturized semiconductor devices are fabricated with a replacement metal gate and a high-k tantalum oxide or tantalum oxynitride gate dielectric with significantly reduced carbon. Embodiments include forming an opening in a dielectric layer by removing a removable gate, depositing a thin tantalum film, as by PVD at a thickness of 25 Å to 60 Å lining the opening, and then conducting thermal oxidation, as at a temperature of 100° C. to 500° C., in flowing oxygen or ozone to form a high-k tantalum oxide gate dielectric layer, or in oxygen and N 2 O or ozone and N 2 O ammonia to form a high-k tantalum oxynitride gate dielectric. Alternatively, oxidation can be conducted in an oxygen or ozone plasma to form the high-k tantalum oxide layer, or in a plasma containing N 2 O and oxygen or ozone to form the high-k tantalum oxynitride gate dielectric layer.

Semiconductor memory device having capacitor using dielectric film, and method of fabricating the same

Abstract: A transistor is formed in a surface region of a semiconductor substrate. A capacitor is formed above the transistor, and has a first electrode, a second electrode, and a dielectric film formed between the first and second electrodes. A first contact is formed on a side surface portion of the capacitor so as to be close to at least a portion of the capacitor, and connected to one of source/drain regions. A side insulating film is formed, in contact with at least the capacitor, on the sidewalls of the first contact.