Showing papers on "Tantalum capacitor published in 2006"

Electrolytic capacitors with a polymeric outer layer and process for the production thereof

Abstract: The invention relates to a process for the production of electrolytic capacitors with low equivalent series resistance and low residual current consisting of a solid electrolyte made of conductive polymers and an outer layer containing conductive polymers, to electrolytic capacitors produced by this process and to the use of such electrolytic capacitors.

Wet electrolytic capacitors

Abstract: A wet electrolytic capacitor that includes an anode, cathode, and a liquid electrolyte disposed therebetween is provided. The cathode contains a metal oxide coating, such as NbO2, in conjunction with other optional coatings to impart improved properties to the capacitor.

Hafnium-Doped Tantalum Oxide High-k Gate Dielectrics

Abstract: Physical and electrical properties of hafnium-doped tantalum oxide thin films were studied. The doping process affects the structures, composition, thickness, dielectric constant, charges, and leakage current density of both the bulk film and the interface layer. Compared with the undoped film, the lightly doped film exhibited improved dielectric properties, such as a higher dielectric constant, a smaller fixed charge density, a larger dielectric strength, and a lower leakage current. The postdeposition annealing process condition, such as temperature and time, also influences the high-k film's dielectric properties. In summary, the hafnium-doped tantalum oxide film is a promising high-k gate dielectric material for future metal-oxide-semiconductor devices.

An Experimental Technique for Estimating the ESR and Reactance Intrinsic Values of Aluminum Electrolytic Capacitors

Abstract: This paper presents an experimental technique that allows the determination of the reactance and ESR intrinsic values of aluminum electrolytic capacitors. The equivalent circuit of an electrolytic capacitor comprises an equivalent series inductance (ESL), an equivalent series resistance (ESR) and a capacitance (C), whose values change with frequency. Therefore, the behavior of an electrolytic capacitor varies from approximately a simple capacitor for low frequencies, to a resistor at its resonance frequency, and finally to an inductor for frequencies higher than its resonance frequency. The knowledge of the resonance frequency of the electrolytic capacitors, as well as their equivalent circuit at the operating frequency becomes of paramount importance for designing purposes. The ESR is one of the most critical problems of static converters that operate near the resonance frequency of the electrolytic capacitors. An increased ESR value leads to a significant increase in the alternate component of the output voltage, requiring a constant action of the control system. To validate the proposed technique and to demonstrate its applicability some experimental and simulated results are presented.

Capacitor that includes high permittivity capacitor dielectric

Abstract: A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer. A capacitor dielectric overlies the bottom electrode. The capacitor dielectric is formed from a high permittivity dielectric with a relative permittivity, preferably greater than about 5. The capacitor also includes a substantially flat top electrode that overlies the capacitor dielectric. In the preferred application, the top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.

Stacked solid electrolytic capacitor

Abstract: A stacked solid electrolytic capacitor has an anode foil composed of a valve metal, a cathode foil having carbon grains that are evaporated or physically adhered to a surface thereof, a separator and a solid electrolytic layer composed of a conducting polymer. The anode foil, the separator and the cathode foil are stacked in order. The solid electrolytic layer is formed between the anode foil and the cathode foil.

Solid electrolytic capacitor assembly

Abstract: An integrated capacitor assembly that offers improved performance characteristics in a convenient and space-saving package is provided. More specifically, the capacitor assembly contains a first solid electrolytic capacitor element and second solid electrolytic capacitor element positioned adjacent to the first solid electrolytic capacitor element. The first and second solid electrolytic capacitor elements each contain an anode formed from a valve metal composition having a specific charge of about 70,000 μF*V/g or more, the anode having a thickness of from about 0.1 to about 4 millimeters. A thermally conductive material is positioned between the first and second solid electrolytic capacitor elements and electrically connected thereto. The thermally conductive material has a coefficient of thermal conductivity of about 100 W/m-K or more at a temperature of 20° C. A case encapsulates the first and second solid electrolytic capacitor elements.

Energy dense electrolytic capacitor

Abstract: An electrical energy storage device such as a wet tantalum electrolytic capacitor or an electrochemical cell such as a lithium/silver vanadium oxide cell is described. The enclosure comprises a drawn casing portion having a planar face wall supporting a surrounding sidewall and is shaped to nest the anode, cathode and intermediate separator components. A mating cover is a stamped planar piece of similar material having a periphery edge welded to the edge of the casing portion surrounding sidewall. In order to prevent heat generated during the welding process from damaging the separator, the anode portion adjacent to the weld site is contoured. This provides sufficient space between the weld and the separator supported on the anode at the contour so that what heat is transmitted to the separator by convection and conduction mechanism will not damage the separator.

Screen-printed filter capacitors for filtered feedthroughs

Abstract: A filter capacitor comprising a pre-sintered substrate supporting alternating active and ground electrode layers segregated by a dielectric layer is described. The substrate is of a ceramic material that maintains its shape and structure dimensions even after undergoing numerous sintering steps. Consequently, relatively thin active and ground electrode layers along with the intermediate dielectric layer can be laid down or deposited by a screen-printing technique. Using a relatively thin over-glaze in comparison to a thick upper dielectric layer finishes the capacitor. Consequently, a significant amount of space is saved in comparison to a comparably rated capacitor or, a capacitor of a higher rating can be provided in the same size as a conventional prior art capacitor. The pre-sintered ceramic substrate is used instead of conventional tape cast technology for the base dielectric.

Multilayer capacitor and mold capacitor

Abstract: A multilayer capacitor including a base body, which is a dielectric substance; and a plurality of electrode layers, which is laminated in the base body and has a plurality of divided electrodes, in which there are at least three or more kinds of electrode layers having different number of electrodes, and the electrode layer having the most electrodes is interposed between the other electrode layers. The multilayer capacitor achieves high withstand voltage and high reliability with no damage to the size reduction and high capacitance of the capacitor and a mold capacitor having the multilayer capacitor built-in.

High energy density capacitors and methods of manufacture

Abstract: A capacitor is provided. The capacitor includes a dielectric polymer film comprising a cyanoresin and at least one electrode coupled to the dielectric polymer film. The capacitor has an energy density of at least about 5 J/cc. A method of making a capacitor is provided. The method includes dissolving a cyanoresin in a solvent to form a solution and coating the solution on a substrate to form a dielectric polymer film. The dielectric polymer film has a breakdown strength of at least about 300 kV/mm.

Electrode material for aluminum electrolytic capacitor, and its manufacturing method

Abstract: An electrode material for an aluminum electrolytic capacitor that does not require etching is provided. An electrode material for an aluminum electrolytic capacitor, wherein the electrode material is made of at least one sintered body of aluminum and an aluminum alloy. [Selection figure] None

High Dielectric, Non-Linear Capacitor

Abstract: A high-dielectric, non-linear capacitor is described comprising a chromophore between two electrodes

Thin-film capacitor and method for fabricating the same, electronic device and circuit board

Abstract: The thin-film capacitor comprises a capacitor part 20 formed over a base substrate 10 and including a first capacitor electrode 14 , a capacitor dielectric film 16 formed over the first capacitor electrode 14 , and a second capacitor electrode 18 formed over the capacitor dielectric film 16 ; leading-out electrodes 26 a, 26 b lead from the first capacitor electrode 14 or the second capacitor electrode 18 and formed of a conducting barrier film which prevents the diffusion of hydrogen or water; and outside connection electrodes 34 a, 34 b for connecting to outside and connected to the leading-out electrodes 26 a, 26 b.

More Energy Dense Electrolytic Capacitor

Abstract: An electrical energy storage device such as a wet tantalum electrolytic capacitor or an electrochemical cell such as a lithium/silver vanadium oxide cell is described. The enclosure comprises a drawn casing portion having a planar face wall supporting a surrounding sidewall and is shaped to nest the anode, cathode and intermediate separator components. A mating cover is a stamped planar piece of similar material having a periphery edge welded to the edge of the casing portion surrounding sidewall. In order to prevent heat generated during the welding process from damaging the separator, the anode portion adjacent to the weld site is contoured. This provides sufficient space between the weld and the separator supported on the anode at the contour so that what heat is transmitted to the separator by convection and conduction mechanism will not damage the separator.

DRAM with high K dielectric storage capacitor and method of making the same

Abstract: A memory cell is fabricated by forming a first capacitor electrode including silicon. A metal layer is formed in physical contact with the first capacitor electrode. The metal layer is formed from a material having a high affinity for oxygen and a melting point above about 1000° C. A layer of high K dielectric material is formed in physical contact with the metal layer. The high K dielectric material has a dielectric constant greater than about 5. A conductive layer is formed over the high K dielectric material layer. An interface between the high K dielectric layer and the metal layer/silicon body is modified by performing an annealing step. A transistor is also formed to be electrically coupled to one of the conductive layer or the first capacitor electrode.

Material for forming capacitor layer and method for manufacturing the material for forming capacitor layer

Abstract: An object of the present invention is to provide a material for forming a capacitor layer comprising a dielectric layer formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method. The material can reduce a leakage current of a capacitor circuit. In order to achieve the object, a material for forming a capacitor layer comprising a dielectric layer between a first conductive layer to be used for forming a top electrode and a second conductive layer to be used for forming a bottom electrode, characterized in that the dielectric layer is a dielectric oxide film formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; and particles constituting the dielectric oxide film are impregnated with a resin component is employed. In addition, a manufacturing method characterized in that the dielectric oxide film is formed on the surface of a material to be the bottom electrode by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; a resin varnish is impregnated into a surface of the dielectric oxide film; the resin is dried and cured to form the dielectric layer; and then a top electrode constituting layer is provided on the dielectric layer is employed.

Automatic-test equipment for the characterization of aluminum electrolytic capacitors

Abstract: This paper describes the most important factors influencing the aluminum electrolyte capacitor showing, in particular, the effect of temperature on the lifetime of this device. The automation of the measurement system, with the oven interfaced with a PC, was also completed to control all the involved parameters.

Screen-printed capacitors for filter feedthrough assemblies

Abstract: A filter capacitor comprising a pre-sintered substrate supporting alternating active and ground electrode layers segregated by a dielectric layer is described. The substrate is of a ceramic material that maintains its shape and structure dimensions even after undergoing numerous sintering steps. Consequently, relatively thin active and ground electrode layers along with the intermediate dielectric layer can be laid down or deposited by a screen-printing technique. Using a relatively thin over-glaze in comparison to a thick upper dielectric layer finishes the capacitor. Consequently, a significant amount of space is saved in comparison to a comparably rated capacitor or, a capacitor of a higher rating can be provided in the same size as a conventional prior art capacitor. The pre-sintered ceramic substrate is used instead of conventional tape cast technology for the base dielectric.

Aluminum electrolytic capacitor having an anode having a uniform array of micron-sized pores

Abstract: A method for making an aluminum foil anode for an aluminum electrolytic capacitor. This invention also relates to an aluminum anode foil for use in an electrolytic capacitor as well as an aluminum electrolytic capacitor having increased capacitance and substantially uniform pore size distribution.

Reducing dielectric constant for MIM capacitor

Abstract: A memory device having improved sensing speed and reliability and a method of forming the same are provided. The memory device includes a first dielectric layer having a low k value over a semiconductor substrate, a second dielectric layer having a second k value over the first dielectric layer, and a capacitor formed in the second dielectric layer wherein the capacitor comprises a cup region at least partially filled by the third dielectric layer. The memory device further includes a third dielectric layer over the second dielectric layer and a bitline over the third dielectric layer. The bitline is electrically coupled to the capacitor. A void having great dimensions is preferably formed in the cup region of the capacitor.

Electric double layer capacitor and aggregation thereof

Abstract: An electrolyte capacitor includes an anode, a cathode, and an electrolytic solution provided between the anode and the cathode. The anode may be a niobium porous sintered body with an oxide film formed as a dielectric layer on a surface thereof. The cathode allows an electric double layer at an interface with the electrolytic solution. The electrolyte capacitor has a large capacitance and increased voltage.

Solid electrolytic capacitor element, solid electrolytic capacitor, and manufacturing method therefor

Abstract: The objective of the current invention is to provide a solid electrolytic capacitor element with low equivalent series resistance. In this solid electrolytic capacitor element, an anode including a porous sintered body, and a dielectric layer are sequentially formed on an anode lead so as to cover a portion of the anode lead. An intermediate layer including polyethylene glycol is formed on the dielectric layer so as to cover an area around the dielectric layer. An electrolyte layer that includes polypyrrole is formed on the intermediate layer so as to cover an area around the intermediate layer. A cathode that includes: a first electrically conductive layer mainly including graphite particles and a second electrically conductive layer mainly including silver particles is formed on the electrolyte layer so as to cover an area surrounding the electrolyte layer.

Semiconductor device, RF-IC and manufacturing method of the same

Abstract: Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor composed of a lower electrode, a capacitor insulating film and an intermediate electrode, another capacitor composed of the intermediate electrode, another capacitor insulating film and an upper electrode. Since the intermediate electrode has a step difference, each of the distance between the intermediate electrode and lower electrode and the distance between the intermediate electrode and upper electrode in a region other than the capacitor formation region becomes greater than that in the capacitor formation region. For example, the lower electrode is brought into direct contact with the capacitor insulating film in the capacitor formation region, while the lower electrode is not brought into direct contact with the capacitor insulating film in the region other than the capacitor formation region.

Polymer-ceramic dielectric composition, embedded capacitor using the dielectric composition and printed circuit board having the capacitor embedded therein

Abstract: Disclosed herein is a polymer-ceramic dielectric composition. The dielectric composition comprises a polymer and a ceramic dispersed in the polymer wherein the ceramic is composed of a material having a perovskite structure represented by ABO3 and a metal oxide dopant and has an electrically charged surface. According to the dielectric composition, the surface of the ceramic is electrically charged to induce space-charge polarization (or interfacial polarization) at the polymer/ceramic interface, resulting in an increase in dielectric constant. Since the dielectric composition has a high dielectric constant particularly in a low-frequency range, it can be suitably used to produce decoupling capacitors.

Screening of electrolytic capacitors

Abstract: A method for screening electrolytic capacitors places a capacitor in series with a resistor in series with a resistor, applying a test voltage and following the charge curve for the capacitor. A high voltage drop indicates high reliability and a low voltage drop is used to reject the piece. The leakage current is not adversely affected during the test.

Solid electrolytic capacitor and production method thereof

Abstract: The present invention relates to a solid electrolytic capacitor comprising a layer of self-doping type conductive polymer having a crosslink between polymer chains thereof on the dielectric film formed on a valve-acting metal. The present invention enables to stably produce thin capacitor elements suitable for laminated type solid electrolytic capacitors, showing less short-circuit failure and less fluctuation in the shape of element, which allows to increase the number of laminated elements in a solid electrolytic capacitor chip to make a capacitor having a high capacity, and having less fluctuation in equivalent series resistance.

Laminated ceramic capacitor and manufacturing method thereof

Abstract: PROBLEM TO BE SOLVED: To enable to realize high capacitance, even if dielectric powder of fine particles is used in order to realize thin layer and multi-layering of a ceramic dielectric layer. SOLUTION: The laminate ceramic capacitor is provided with an effective section 1a where ceramic dielectric layers 7 and internal electrode layers 9 are alternately laminated, a capacitor body 1 consisting of a protective layer 1b of the ceramic dielectric layers 7 formed on upper and lower surfaces in a laminating direction of the effective section 1a, and an external electrode 3 formed on both the ends of the capacitor body 1. In this capacitor, the average grain size of a crystal grain 11, forming the ceramic dielectric layer 7 of the protective layer 1b, is smaller than the average grain size of a crystal grain 11 forming the ceramic dielectric layer 7 of the effective region 1a, the capacitor body 1 has a side surface that is perpendicular to a magnetism opposite to the external electrode is bent like a recess, and its residual compressive stress is 250 MPa or higher. COPYRIGHT: (C)2007,JPO&INPIT

Method for fabricating a semiconductor component including a high capacitance per unit area capacitor

Abstract: A method is provided for fabricating a semiconductor component that includes a capacitor having a high capacitance per unit area. The component is formed in and on a semiconductor on insulator (SOI) substrate having a first semiconductor layer, a layer of insulator on the first semiconductor layer, and a second semiconductor layer overlying the layer of insulator. The method comprises forming a first capacitor electrode in the first semiconductor layer and depositing a dielectric layer comprising Ba 1-x Ca x Ti 1-y Zr y O 3 overlying the first capacitor electrode. A conductive material is deposited and patterned to form a second capacitor electrode overlying the dielectric layer, thus forming a capacitor having a high dielectric constant dielectric. An MOS transistor in then formed in a portion of the second semiconductor layer, the MOS transistor, and especially the gate dielectric of the MOS transistor, formed independently of forming the capacitor and electrically isolated from the capacitor.

Chip-like solid electrolytic capacitor

Abstract: PROBLEM TO BE SOLVED: To inexpensively provide a chip-like solid electrolytic capacitor excellent in an ESR property with a good productivity. SOLUTION: The chip-like solid electrolytic capacitor comprises: a capacitor element which is provided with an anode lead and forms an oxidation coating layer, a solid electrolytic layer, and a cathode drawer layer; an electrode substrate which is used as an electrode of a capacitor; coating resin; an insulating layer in which the electrode substrate has a plurality of via-holes or notches; an anode internal electrode and a cathode internal electrode; and an anode external electrode and a cathode external electrode which are respectively connected to the internal electrodes. The anode internal electrode is formed by conductive deposition, and is projected from the insulating layer to bond the conductive deposition and the anode lead. COPYRIGHT: (C)2008,JPO&INPIT