Topic
Tantalum capacitor
About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.
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Patent•
12 Nov 2003TL;DR: An electrolyte for an electrolytic capacitor which is high in electrolytic conductivity, excellent in heat stability and high in withstand voltage has been proposed in this article, where the relationship of formulae (I): Y≧−7.5X+150, and X≧4, Y>0.
Abstract: An electrolyte for an electrolytic capacitor which is high in electrolytic conductivity, excellent in heat stability and high in withstand voltage. An electrolyte for an electrolytic capacitor comprising a tetrafluoroaluminate ion; and an electrolyte for an electrolytic capacitor containing a salt and a solvent, characterized in that electrolytic conductivity X (mS·cm−1) at 25° C. and withstand voltage Y (V) of a capacitor satisfy the relationships of formulae (I): Y≧−7.5X+150, and X≧4, Y>0.
15 citations
Patent•
NEC1
TL;DR: In this paper, a thin-film capacitor is proposed to prevent short-circuit between the upper and lower electrodes, and degradation of the dielectric layer during fabrication of a thin film capacitor.
Abstract: There is provided a thin film capacitor including (a) a lower electrode, (b) an insulating layer formed burying the lower electrode therein and formed with a via-hole reaching the lower electrode, (c) a dielectric layer formed on an inner sidewall of the via-hole and covering an exposed surface of the lower electrode therewith, and (d) an upper electrode surrounded by the dielectric layer. In accordance with the thin film capacitor, the upper electrode is formed to be buried in the via-hole formed above the lower electrode. Hence, it is possible to prevent short-circuit between the upper and lower electrodes, and degradation of the dielectric layer during fabrication of a thin film capacitor, both of which enhances reliability of a capacitor. In addition, a multi-layered wiring structure could be readily fabricated on the thin film capacitor.
15 citations
Patent•
06 Dec 1989TL;DR: In this paper, a planar type capacitance is provided in the planar area of occupation of the stacked capacitor portion, whereby the capacitance of the capacitor can be increased without increasing the planareas of occupation.
Abstract: A capacitor of a semiconductor memory device includes a planar type capacitor portion formed on a surface of an impurity region and a stacked type capacitor portion extending above the gate electrode. The stacked capacitor portion has a three-layer structure of polycrystalline silicon in which upper, lower and side surfaces of a lower electrode are surrounded by a dielectric layer and the upper electrode. A portion of a dielectric layer in the stacked capacitor portion is coupled to another dielectric layer formed on the surface of one impurity region. The capacitor has a planar type capacitor provided in the planar area of occupation of the stacked capacitor portion, whereby the capacitance of the capacitor can be increased without increasing the planar area of occupation.
15 citations
TL;DR: The automation of the measurement system, with the oven interfaced with a PC, was completed to control all the involved parameters and the effect of temperature on the lifetime of this device was described.
Abstract: This paper describes the most important factors influencing the aluminum electrolyte capacitor showing, in particular, the effect of temperature on the lifetime of this device. The automation of the measurement system, with the oven interfaced with a PC, was also completed to control all the involved parameters.
15 citations