Topic
Tantalum capacitor
About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.
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26 Dec 2005TL;DR: In this paper, a multi-layered solid electrolytic capacitor is proposed to improve the product yield by preventing increases in leakage current and defects due to short circuits without increasing manufacturing cost or capacitor size.
Abstract: A multi-layered solid electrolytic capacitor and a method of manufacturing the capacitor that improve the product yield drastically by preventing increases in leakage current and defects due to short circuits without increasing manufacturing cost or capacitor size. A multi-layered solid electrolytic capacitor includes: a plurality of capacitor elements, each including an aluminum foil having an anode portion and a cathode portion having a dielectric oxide film and a cathode layer formed in succession on a surface of the aluminum foil, wherein the plurality of capacitor elements are stacked on top of one another, the anode portions of adjacent capacitor elements are welded each other, and the anode portion of one of the outermost capacitor elements is weld-secured to an anode terminal, the multi-layered solid electrolytic capacitor having a first stress alleviating groove and a second stress alleviating groove formed in at least one of weld surfaces of the anode portion.
14 citations
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09 Feb 1976TL;DR: In this article, a thin film capacitor having a tantalum oxide dielectric is described, which is then removed from the vacuum environment and disposed within an anodizing bath, the current being substantially constant until a predetermined desired voltage is reached.
Abstract: A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having a non-tantalum electrically conductive film electrode formed thereon is disposed within a vacuum environment. A film of tantalum oxide is applied over the conductive film within the vacuum environment. The composite is then removed from the vacuum environment and disposed within an anodizing bath wherein an electrical current is passed through the tantalum oxide film, the current being substantially constant until a predetermined desired voltage is reached. Thereafter, a second electrically conductive film electrode is disposed over the so-formed tantalum oxide film.
14 citations
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12 Jan 1999TL;DR: In this article, a variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus.
Abstract: A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus. A method of making such a variable capacitor is also described in which the capacitor is built in a layered structure with the top layer including a portion of dielectric material extending into the space between the capacitor plates. After formation of the top layer, an intermediate layer is etched away to render the top layer flexible to facilitate movement of the dielectric material in the space between the capacitor plates.
14 citations
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23 Jun 2005TL;DR: In this paper, a two-step milling process was used to mill tantalum particles into tantalum flake powder having flakes of the desired thickness, which can then be pressed and sintered to form an anode.
Abstract: Methods of maximizing a tantalum capacitor's capacitance are disclosed, as well as tantalum flake powder and anodes. A two step milling process can be used to mill tantalum particles into tantalum flake powder having flakes of the desired thickness. This flake powder can then be pressed and sintered thereby forming an anode. Other flake capacitance methods and products are also described.
14 citations