Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Removal of organic acid based binders from powder metallurgy compacts

Abstract: Organic acid-based binders are efficiently removed from powder metallurgy compacts, such as tantalum capacitor anode bodies, by immersion in a heated aqueous alkanolamine solution followed by rinsing in warm water. This method results in lower residual carbon and oxygen levels than are found with thermal binder removal methods.

Calculation of Temperature Field in Power Capacitor

Abstract: The operating temperature of a power capacitor has an effect on its service life directly. A 500-kvar power capacitor is taken as the research object. The capacitor fever produced by internal dielectric loss is considered under the running condition of 55 $^{\circ}\hbox{C} $ . The 3-D finite volume method calculation model of capacitor temperature is established, and the temperature distribution characteristics and the internal temperature at the hottest spot of the capacitor are obtained. With the research on a corresponding prototype, the numerical simulation results are consistent with the test values. The accuracy of temperature calculation model is testified, which provides a reliable basis for the design and operation of power capacitor.

Methods of forming metal-insulator-metal (MIM) capacitors with separate seed and main dielectric layers and MIM capacitors so formed

Abstract: A metal-oxy-nitride seed dielectric layer can be formed on a metal-nitride lower electrode of a meta-insulator-metal (MIM) type capacitor. The metal-oxy-nitride seed dielectric layer can act as a barrier layer to reduce a reaction with the metal-nitride lower electrode during, for example, backend processing used to form upper levels of metallization/structures in an integrated circuit including the MIM type capacitor. Nitrogen included in the metal-oxy-nitride seed dielectric layer can reduce the type of reaction, which may occur in conventional type MIM capacitors. A metal-oxide main dielectric layer can be formed on the metal-oxy-nitride seed dielectric layer and can remain separate from the metal-oxy-nitride seed dielectric layer in the MIM type capacitor. The metal-oxide main dielectric layer can be stabilized (using, for example, a thermal or plasma treatment) to remove defects (such as carbon) therefrom and to adjust the stoichiometry of the metal-oxide main dielectric layer.

The stabilization of niobium-based solid electrolyte capacitors*

Abstract: Solid electrolyte tantalum capacitors (Ta) are a major part of the passive electronic components industry. These capacitors are comprised of a sintered porous Ta powder compact on which a dielectric film of tantalum pentoxide (Ta2O5) is grown electrochemically. In most cases, a conducting MnO2 counter-electrode is applied by pyrolysis of an aqueous solution of Mn(NO3)2. Such capacitors have very high volumetric efficiency and excellent long-term stability. However, in certain applications, some of the tantalum properties are not required. This has led to the development of high efficiency ceramic capacitors and organic semiconductor aluminum capacitors that can substitute for Ta in some applications. Another potential substitute material is niobium (Nb), which has electrical and chemical properties similar to tantalum. Early attempts to use Nb failed because of an unstable niobium=niobium pentoxide (Nb2O5) interface [1], but recently two approaches to stabilization have been developed. One is based on the known effect of Ta nitriding, and the other takes advantage of the unique properties of niobium monoxide (NbO). This paper discusses the dynamics of the substrate=dielectric interface and shows how control of oxygen migration at the interface results in improved capacitor performance.

Semiconductor device, RF-IC and manufacturing method of the same

Abstract: Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor composed of a lower electrode, a capacitor insulating film and an intermediate electrode, another capacitor composed of the intermediate electrode, another capacitor insulating film and an upper electrode. Since the intermediate electrode has a step difference, each of the distance between the intermediate electrode and lower electrode and the distance between the intermediate electrode and upper electrode in a region other than the capacitor formation region becomes greater than that in the capacitor formation region. For example, the lower electrode is brought into direct contact with the capacitor insulating film in the capacitor formation region, while the lower electrode is not brought into direct contact with the capacitor insulating film in the region other than the capacitor formation region.