Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Capacitors, methods of forming capacitors, and methods of forming capacitor dielectric layers

Abstract: A method of forming a capacitor includes forming first and second capacitor electrodes over a substrate. A capacitor dielectric region is formed intermediate the first and second capacitor electrodes, and includes forming a silicon nitride comprising layer over the first capacitor electrode. A silicon oxide comprising layer is formed over the silicon nitride comprising layer. The silicon oxide comprising layer is exposed to an activated nitrogen species generated from a nitrogen-containing plasma effective to introduce nitrogen into at least an outermost portion of the silicon oxide comprising layer. Silicon nitride is formed therefrom effective to increase a dielectric constant of the dielectric region from what it was prior to said exposing. Capacitors and methods of forming capacitor dielectric layers are also disclosed.

Integrated semiconductor product with metal-insulator-metal capacitor

Abstract: To fabricate an integrated semiconductor product with integrated metal-insulator-metal capacitor, first of all a dielectric auxiliary layer (6) is deposited on a first electrode (2, 3, 5). This auxiliary layer (6) is then opened up (15) via the first electrode. Then, a dielectric layer (7) is produced, and the metal track stack (8, 9, 10) for the second electrode is then applied to the dielectric layer (6). This is followed by the patterning of the metal-insulator-metal capacitor using known etching processes. This makes it possible to produce dielectric capacitor layers of any desired thickness using materials which can be selected as desired. In particular, this has the advantage that via etches can be carried out significantly more easily than in the prior art, since it is not necessary to etch through the residual dielectric capacitor layer above the metal tracks.

Method for forming capacitor anodes

Abstract: A dendritic sponge which is directionally-grown on a substrate material has a high surface to volume ratio and is suitable for forming anodes for highly efficient capacitors. A dielectric film is formed on the sponge surface by oxidizing the surface. In a preferred embodiment, the dielectric is grown on titanium sponge and is doped with oxides of Ca, Mg, Sr, Be, or Ba to improve the film's dielectric constant or with higher valent cations, such as Cr6+, V5+, Ta5+, Mo6+, Nb5+, W6+, and P5+, to reduce the oxygen vacancy concentration and leakage current of the dielectric film. A capacitor formed from the sponge includes a cathode electrolyte which serves as an electrical conductor and to repair the dielectric film by re-oxidizing the anode surface at areas of local breakdown. Sponges of titanium, tantalum, and aluminum form efficient dielectric films. In another embodiment, sponges of elements which do not form efficient dielectric films are coated with a dielectric material. Capacitors formed with titanium sponges have energy densities of 10−2 to 50 Watt hours and power densities of 100,000 to 10,000,000 Watts per kilogram of titanium.

Integrated multi-capacitor network

Abstract: A novel multi-capacitor divider network in which two capacitors are fabricated in a single package, using a common dielectric material, is disclosed. In a preferred embodiment of the present invention, the multi-capacitor network comprises a high-voltage capacitor and a low-voltage capacitor fabricated in a single monolithic package, both fabricated from a class one dielectric material having a combined tolerance of plus or minus five percent. The use of the same class one dielectric material for both capacitors assures that the temperature coefficents are similar for both capacitors and, more importantly, that the tolerance of the ratio between the high-voltage capacitor and low-voltage capacitor is within a predetermined range.