Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Field effect transistor having an integrated capacitor

Abstract: An integrated field effect transistor capacitor structure having a capacitor connected between source and drain electrodes is described. In one embodiment, the capacitor is formed over a drain contact by providing a dielectric over said contact and an airbridge upper plate between said dielectric to the adjacent source contact. Preferably, the capacitor dielectric is the same dielectric as the FET passivation.

Atomic layer deposition and plasma treatment method for forming microelectronic capacitor structure with aluminum oxide containing dual dielectric layer

Abstract: Within a method for forming a capacitor within a microelectronic fabrication, there is employed a bilayer capacitor dielectric layer formed in part of an aluminum oxide dielectric material deposited employing an atomic layer deposition (ALD) method, and subsequently plasma treated. The aluminum oxide dielectric material deposited employing the atomic layer deposition (ALD) method and subsequently plasma treated provides for enhanced performance of the capacitor.

Method of manufacturing a moisture sensor

Abstract: A moisture sensor is manufactured by applying a thin layer of tantalum oxide to a moisture insensitive substrate and placing at least two electrodes on the tantalum oxide layer. The tantalum oxide layer comprises the oxide of a highly resistive low density tantalum where the tantalum in the layer applied to the substrate has a density of less than 15 g/cm 3 . The low density tantalum may be applied by cathode sputtering and the oxide may be formed by anodic oxidation.

Degradation of leakage currents in solid tantalum capacitors under steady-state bias conditions

Abstract: Degradation of leakage currents in various types of solid tantalum capacitors under steady-state bias conditions was investigated at temperatures from 105 °C to 170 °C and voltages up to two times the rated voltage. Variations of leakage currents with time under highly accelerated life testing (HALT) and annealing, thermally stimulated depolarization currents, and I-V characteristics were measured to understand the conduction mechanism and the reason for current degradation. During HALT the currents increase gradually up to three orders of magnitude in some cases, and then stabilize with time. This degradation is reversible and annealing can restore the initial levels of leakage currents. The results are attributed to migration of positively charged oxygen vacancies in tantalum pentoxide films that diminish the Schottky barrier at the MnO2/Ta2O5 interface and increase electron injection. A simple model allows for estimation of concentration and mobility of oxygen vacancies based on the level of current degradation.

Chip solid electrolytic capacitor and manufacturing method therefor

Abstract: PROBLEM TO BE SOLVED: To provide a chip solid electronic capacitor and its manufacturing method, which are capable of preventing a cathode terminal from coming off at cutting and of restraining the capacitor from deteriorating its ESR characteristics. SOLUTION: A dielectric oxide film, an electrolytic layer, and a cathode layer are successively laminated on the surface of an anode body for the formation of a capacitor element 2 whose outer surface serves as the cathode layer, wherein the anode body is equipped with an anode lead wire 4 and formed of valve action metal. The capacitor elements 2 are mounted on a lead frame 11, equipped with a plurality of repetitive units each provided with an anode terminal 5 connected to the anode lead wire 4 of the capacitor element 2 and a cathode terminal 6 connected to the cathode layer of the capacitor element 2. The capacitor elements 2 mounted on the lead frame 11, the anode terminals 5, and the cathode terminals 6 are coated with a sheathing resin 3 so as to make the terminals 5 and 6 partially exposed. The repetitive units of the lead frame 11, where the capacitor elements 2 covered with the sheathing resin 3 are located inside are cut into the prescribed shapes for the formation of chip solid electrolytic capacitors. Thin-walled parts 30 and 31 are provided to the lead frame 11 so as to surround the mounting part where the capacitor element 2 is mounted. COPYRIGHT: (C)2003,JPO