Tantalum capacitor

About: Tantalum capacitor is a research topic. Over the lifetime, 2432 publications have been published within this topic receiving 26709 citations.

Lifetime prediction for tantalum capacitors with multiple degradation measures and particle swarm optimization based grey model

Abstract: A lifetime prediction method for high-reliability tantalum (Ta) capacitors was proposed, based on multiple degradation measures and grey model (GM). For analyzing performance degradation data, a two-parameter model based on GM was developed. In order to improve the prediction accuracy of the two-parameter model, parameter selection based on particle swarm optimization (PSO) was used. Then, the new PSO-GM(1, 2, ω) optimization model was constructed, which was validated experimentally by conducting an accelerated testing on the Ta capacitors. The experiments were conducted at three different stress levels of 85, 120, and 145 °C. The results of two experiments were used in estimating the parameters. And the reliability of the Ta capacitors was estimated at the same stress conditions of the third experiment. The results indicate that the proposed method is valid and accurate.

Capacitor having current surge protection

Abstract: A capacitor assembly including a metallized dielectric capacitor and an inductor as integral parts. The inductor, which suppresses current surges which would destroy thin metallic layer electrodes of the capacitor, includes a conductive coil in series with the capacitor and a ferromagnetic core disposed in available space in a container for the capacitor.

Solid electrolyte chip capacitor method

Abstract: A solid-electrolyte chip capacitor of improved volume efficiency and placement capability is attained by molding a solid-electrolyte capacitor section so that the cathode end of the capacitor section is not covered by the molding material, and the anode end of the molding is provided with a recess within which the riser from the anode of the capacitor section is accessible.

Tantalum Film Capacitors with Improved AC Properties

Abstract: Tantalum thin-film capacitors have been fabricated from magnetron sputtered tantalum films with different nitrogen concentrations. Capacitors made from film containing between 13 and 22 atom percent nitrogen and heat treated at temperatures between 250°C and 350°C show lower ac losses and TCC, and improved capacitance stability, when compared to standard capacitors based on tantalum containing 3 atom percent nitrogen. In addition, the dc properties of the improved capacitors are equivalent or better than those of the standard product. It is proposed that in capacitors containing over 13 atom percent nitrogen, the nitrogen fills interstitial vacancies in the tantalum lattice. A barrier is therefore produced to substantial oxygen diffusion from the dielectric into the underlying tantalum film during exposure to temperature between 250° and 350°C. In addition, results at 200°C suggest that a second mechanism for improved characteristics is the removal of water or citrate molecules, incorporated during anodization, from the hulk of the dielectric.